Maxim Integrated SRAM 546

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1345ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V				Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp		70 ns
DS1330BL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	70 ns
DS2030AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	70 ns
DS2070W-100#	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words		3.3	3.3	8	GRID ARRAY	BGA256,26X26,50	SRAMs	1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V			27 mm	Not Qualified	16777216 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS1345WP-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		3.6 V				Not Qualified	1048576 bit	3 V		e3			.00015 Amp		150 ns
DS1630ABL-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	85 ns
DS2229-120	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80		5.5 V	18.1356 mm			Not Qualified	8388608 bit	4.5 V		e0			.06 Amp		120 ns
DS1330YP-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.5 V				Not Qualified	262144 bit	4.5 V		e3			.00015 Amp		100 ns
DS1745Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	131072 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0			.004 Amp		200 ns
DS3050W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e1				27 mm	100 ns
DS2045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2227-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	SINGLE		R-XSMA-N72		5.5 V				Not Qualified	4194304 bit	4.5 V	DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32	e0			.28 Amp		100 ns
DS1630AB-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.25 V	9.52 mm		15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	85 ns
DS1330WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	3.6 V				Not Qualified	262144 bit	3 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1330YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS MINIMUM DATA RETENTION	e0			.00015 Amp		70 ns
DS2045AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS1650ABL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	70 ns
DS1350YP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1745Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	131072 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0			.004 Amp		150 ns
DS1330WP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	3.6 V				Not Qualified	262144 bit	3 V	10 YEAR DATA RETENTION	e0			.00015 Amp		150 ns
DS2045L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0				27 mm	100 ns
DS1345YL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm		21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION			225	.00015 Amp	24.5745 mm	70 ns
DS38464-070	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		3.3		40	MICROELECTRONIC ASSEMBLY				70 Cel		64KX40	64K		0 Cel	TIN LEAD	SINGLE		R-XSMA-N72		3.6 V				Not Qualified	2621440 bit	3 V		e0					70 ns
DS1345YP-C01	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V				Not Qualified	1048576 bit	4.5 V		e0
DS1350YP-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.5 V				Not Qualified	4194304 bit	4.5 V		e3			.0006 Amp		70 ns
DS1650ABL-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	85 ns
DS1330ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V				Not Qualified	262144 bit	4.75 V		e0			.00015 Amp		70 ns
DS2430	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	3			PLASTIC/EPOXY	NO		CMOS				.5 mA	32 words			3/5	8		SIP3,.1,50	SRAMs	1.27 mm	70 Cel		32X8	32		0 Cel	Tin/Lead (Sn/Pb)	SINGLE								Not Qualified				e0			.00000015 Amp		15000 ns
DS2016S-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE				85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V				Not Qualified	16384 bit	2.7 V	CAN ALSO BE OPERATED WITH 5V SUPPLY	e0	20	240			150 ns
DS1630ABL-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	120 ns
DS2407P	Maxim Integrated		INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		MOS	C BEND							3/5		SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6						Not Qualified				e0
DS1730YL-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	32768 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel										Not Qualified	262144 bit						.004 Amp		200 ns
DS1330ABP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V				Not Qualified	262144 bit	4.75 V	10 YEARS MINIMUM DATA RETENTION	e0			.00015 Amp		100 ns
DS1330BL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	100 ns
DS1380S	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			25 mA	2048 words				8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16384 bit			e0			.007 Amp		100 ns
DS1630ABL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	70 ns
DS1745Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		3	3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		3.6 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	DATA RETENTION = 10 YRS	e0			.004 Amp	42.925 mm	150 ns
DS2430E	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			.5 mA	32 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	SRAMs	.635 mm	70 Cel		32X8	32		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified				e0			.00000015 Amp		15000 ns
DS2030AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS1330ABP-70IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.25 V				Not Qualified	262144 bit	4.75 V		e3			.00015 Amp		70 ns
DS2045W-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	70 ns
DS1350YP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS2223T	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	CYLINDRICAL				85 Cel		256X1	256		-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		5.5 V				Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0					1000 ns
DS2015	Maxim Integrated	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS	6 mA	32 words	COMMON			8	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32X8	32		0 Cel	Tin/Lead (Sn/Pb)	DUAL	4, (3 LINE)	R-PDIP-T18				4 MHz		Not Qualified				e0			.006 Amp
DS1650ABL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	70 ns
DS1330ABP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V				Not Qualified	262144 bit	4.75 V	10 YEARS MINIMUM DATA RETENTION	e0			.00015 Amp		70 ns
DS2229-85	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80		5.5 V	18.7706 mm			Not Qualified	8388608 bit	4.5 V		e0			.000008 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.