Maxim Integrated SRAM 546

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS2050W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	4194304 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS1350WP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3			.00015 Amp		100 ns
DS3065WP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	SYNCHRONOUS	50 mA	1024 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		1KX8	1K		-40 Cel		DUAL		R-XDMA-U34		3.6 V	2.3368 mm	23.495 mm	Not Qualified	8192 bit	3 V			30	260	.0015 Amp	25.019 mm	100 ns
DS1345YP-70IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn)	DUAL		R-XDMA-U34	1	5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e3	40	245	.00015 Amp		70 ns
DS3065W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	8388608 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2229-100	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80		5.5 V	18.1356 mm		Not Qualified	8388608 bit	4.5 V		e0			.06 Amp		100 ns
DS1345YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			.00015 Amp	24.5745 mm	100 ns
DS1646L-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel									Not Qualified	1048576 bit						.004 Amp		150 ns
DS2016-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		3		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24	1	3.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e0				31.75 mm	250 ns
DS1350ABP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1609S-50+	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	MATTE TIN	DUAL	2, (MUXED)	R-PDSO-G24	1				Not Qualified	2048 bit			e3	30	260	.0003 Amp		50 ns
DS2030W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2030L-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	262144 bit	3 V		e1			.001 Amp	27 mm	100 ns
DS1345ABP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1647-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			95 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0			.004 Amp		150 ns
DS1350WP-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		150 ns
DS2016-100+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e3	30	260	.000001 Amp	31.75 mm	100 ns
DS2223Z	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words	COMMON	5	2/5.5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel	OPEN-DRAIN	256X1	256		-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-G4	1	5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0				6.5 mm	1000 ns
DS1730Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDMA-T28		5.5 V			Not Qualified	262144 bit	2.7 V	BATTERY BACK-UP	e0					100 ns
DS2064S	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.65 mm	7.5 mm	Not Qualified	65536 bit	4.5 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0			.000001 Amp	17.9 mm	150 ns
DS1350AB	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1630ABL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	100 ns
DS1350WP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		150 ns
DS3065W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	8388608 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS1630ABL-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	85 ns
DS1647P-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				95 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel									Not Qualified	4194304 bit						.004 Amp		150 ns
DS1381	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V	10.29 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.007 Amp	33.72 mm	100 ns
DS1609SN-50	Maxim Integrated	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0			.0003 Amp	15.4 mm	50 ns
DS2016R-100	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V	2.67 mm	7.5 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e0			.000001 Amp	17.9 mm	100 ns
DS1345AB	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V			Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1650YL-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	85 ns
DS1350ABP-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e3			.0006 Amp		100 ns
DS2045AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm	27 mm	Not Qualified	1048576 bit	4.75 V		e0				27 mm	70 ns
DS3050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS1630Y-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	120 ns
DS1350BL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	100 ns
DS1650YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	100 ns
DS1345YP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	30	225	.00015 Amp		70 ns
DS1630AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.25 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	100 ns
DS1745YL-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel									Not Qualified	1048576 bit						.004 Amp		200 ns
DS1330YL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	70 ns
DS2224Y	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		224 words		5		1	SMALL OUTLINE			2.3 mm	85 Cel		224X1	224		-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		5.5 V	1.8 mm	3.5 mm	Not Qualified	224 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0				6.5 mm	1000 ns
DS1330YP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS MINIMUM DATA RETENTION	e0			.00015 Amp		100 ns
DS1350WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		100 ns
DS2065W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	8388608 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS1750Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0			.004 Amp		150 ns
DS2030Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm	27 mm	Not Qualified	262144 bit	4.5 V		e0				27 mm	100 ns
DS1350ABP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.