Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT58LC64K16D8LG-8.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX16	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0	YES	.005 Amp	20 mm	5 ns
MT5C2889DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.66 mm		7.67 mm	Not Qualified	294912 bit	4.5 V		e0	YES	.0004 Amp	20.98 mm	20 ns
MT58LC128K16C5LG-6TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX16	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm	6 ns
MT55V256V72F12G	Micron Technology	ZBT SRAM	COMMERCIAL	221	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B221	2.625 V	1.2 mm		13 mm	Not Qualified	18874368 bit	2.375 V		e1			15 mm	9 ns
MT59L128L18BT-10	Micron Technology	LATE-WRITE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm			128KX18	128K				QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V			YES		20 mm	5 ns
MT5LC1M4D4TG-12LP	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0		.0007 Amp		12 ns
MT5C6408C-15XT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0		.005 Amp		15 ns
MT55L128V36F1B-10	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		.01 Amp	22 mm	7.5 ns
TTS92256GK-25C-3	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit					.0003 Amp		25 ns
MT5LC2568DJ-15IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0		.0003 Amp		15 ns
TTS92256GK-20C-26	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit					.0003 Amp		20 ns
MT5LC1008-25XT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0		.0003 Amp		25 ns
MT5C1008DJ-35XT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0		.007 Amp		35 ns
MT58LC256K18B3S27BDC2-10	Micron Technology	STANDARD SRAM	COMMERCIAL	79	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	256KX18	256K		0 Cel		UPPER	1	R-XUUC-N79	3.6 V				Not Qualified	4718592 bit	3.135 V			YES			10 ns
MT58LC64K36E1S27BDC3-9	Micron Technology	STANDARD SRAM	COMMERCIAL	97	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	64KX36	64K		0 Cel		UPPER	1	X-XUUC-N97	3.6 V				Not Qualified	2359296 bit	3.135 V			YES
MT55L256V18P1T-7.5IT	Micron Technology	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX18	256K		-40 Cel		QUAD		R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V					20 mm	4.2 ns
MT59L256L18FB-5	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	3.1 V		TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0		.025 Amp	22 mm	7 ns
MT5C1604DJ-12XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16384 bit			e0				12 ns
MT58LC256K18D9LG-6	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0	YES	.01 Amp	20 mm	3.5 ns
MT5C1005SJ-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00015 Amp	18.44 mm	35 ns
MT58L64L18PT-10	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	5 ns
MT55V1MV18FT-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX18	1M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.6 mm	90 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE	e0		.03 Amp	20 mm	8.5 ns
MT57W4MH9JF-7.5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX9	4M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			17 mm	.5 ns
MT58L128V36F1B-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1			22 mm	10 ns
MT5C1608C-35	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T24	5.5 V				Not Qualified	16384 bit	4.5 V		e0		.003 Amp		35 ns
MT58L128L18FT-10	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.01 Amp	20 mm	10 ns
MT5C1605-15LXT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	175 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.0003 Amp	26.165 mm	15 ns
MT58C1618EJ-20	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	16384 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE	e0	YES	.015 Amp	19.1262 mm	20 ns
MT58L512L18DT-10	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	5 ns
MT58LC256K16B3S27BDC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K		0 Cel		UPPER	1	R-XUUC-N77	3.6 V				Not Qualified	4194304 bit	3.135 V			YES			11 ns
MT5LC1001SJ-17LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	2 V	-40 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.66 mm		7.67 mm	Not Qualified	1048576 bit	3 V			NO		18.44 mm	17 ns
MT5C6405EC-20	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0		.005 Amp		20 ns
MT5C2568W20IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0		.005 Amp		20 ns
MT5C6406-15IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0		.003 Amp		15 ns
MT5C64K16A1TG-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0	YES		20.95 mm	15 ns
MT58L1MY18DF-5IT	Micron Technology
MT5LC1001DJ-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	1048576 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0	NO	.00005 Amp	18.44 mm	35 ns
MT5C1M4B2TG-25PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		1MX4	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	YES		20.96 mm	25 ns
MT55L128L32P1B-7.5IT	Micron Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX32	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	133 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		.01 Amp	22 mm	4.2 ns
MT5LC2565DJ-20LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.63 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	18.44 mm	20 ns
MT5C6401-8LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.00025 Amp	26.165 mm	8 ns
MT5C1M4B2TG20	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0		.002 Amp		20 ns
MT5C4108DJ-17LXTTR	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		23.52 mm	17 ns
MT5LC2568DJ-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0		.0003 Amp		15 ns
MT5LC2564-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE			2.54 mm	85 Cel		64KX4	64K	2 V	-40 Cel		DUAL	1	R-PDIP-T24	3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V			NO		31.495 mm
MT5C2564SG-35LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.4 mm	35 ns
MT58L256L18PT-4.4	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	575 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm	227 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	2.9 ns
MT5C4005DJ-20LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX4	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		20.98 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.