Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT45W8MW16BGX-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1	260	YES	.0002 Amp	10 mm	70 ns
MT45W8MW16BGX-708WTTR	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		8388608 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1	260			10 mm	70 ns
MT3LST6464PG-66	Micron Technology	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	585 mA	65536 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.6 V		66 MHz		Not Qualified	4194304 bit	3.135 V	32K X 8 TAG			YES	.013 Amp		7 ns
MT45W4MW16BCGB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1			.00012 Amp	8 mm	70 ns
MT45W8MW16BGX-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1	260		.0002 Amp	10 mm	85 ns
MT5C2561-20	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	262144 bit			e0			.005 Amp		20 ns
MT5C6408DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		YES	.0003 Amp	18.44 mm	20 ns
MT5C1606C-35	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0			.003 Amp		35 ns
MT5C1606-30IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0			.003 Amp		30 ns
MT58LC128K18E1S27BDC3-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	78	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	128KX18	128K		0 Cel		UPPER	1	X-XUUC-N78	3.6 V				Not Qualified	2359296 bit	3.135 V				YES
MT5C2568EC30L883C	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0			.001 Amp		30 ns
MT5C2564SG-15LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K	2 V	-40 Cel		DUAL	1	R-PDSO-G24	5.5 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	4.5 V				NO		15.4 mm	15 ns
MT5C64K16A1DJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44	5.5 V	3.76 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.005 Amp	28.6 mm	25 ns
MT5C1605-8IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	16384 bit			e0			.003 Amp		8 ns
MT58LC64K32C6LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	2097152 bit	3.135 V		e0		YES	.01 Amp	20 mm	4.2 ns
MT45W1ML16PAFA-70LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0			.00007 Amp	8 mm	70 ns
MT5C6401-25	Micron Technology	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0			.005 Amp		25 ns
MT58L64L32FT-8.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0			.01 Amp	20 mm	8.5 ns
MT4S12832Z-20	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	620 mA	131072 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64		13.843 mm			Not Qualified	4194304 bit			e0			.02 Amp		20 ns
MT5LC2564SG-35LPITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.63 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	3 V		e0		NO		15.4 mm	35 ns
MT55L512Y32PB-10	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3.135 V		e0			.01 Amp	22 mm	5 ns
MT5C6406EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0			.00025 Amp		30 ns
MT5LC128K8D4TG-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3		YES		20.95 mm
MT5LC2564SG-25LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.63 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	3 V		e0		NO	.00005 Amp	15.4 mm	25 ns
MT5LC256K16D4TG-25PXT	Micron Technology	STANDARD SRAM	MILITARY	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		22.25 mm	25 ns
MT5C6404-20IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0			.005 Amp		20 ns
MT8LS25632RM25	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1280 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm			Not Qualified	8388608 bit						.04 Amp		25 ns
MT58L512V32FF-6.8	Micron Technology
MT55V1MV18PT-6IT	Micron Technology
MT58LC32K32E1LG-11	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0		YES	.005 Amp	20 mm	11 ns
MT58LC128K32B2LG-9PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX32	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e0		YES		20 mm	9 ns
MT58L128V32F1B-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX32	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	66 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0			.01 Amp	22 mm	10 ns
MT58L128L18PF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm	200 MHz	13 mm	Not Qualified	2359296 bit	3.135 V		e0			.01 Amp	15 mm	3.5 ns
MT55L128V36P1F-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.465 V	1.2 mm	166 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e0			.01 Amp	15 mm	3.5 ns
MT5C2564DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0		NO	.0005 Amp	15.9 mm	20 ns
MT5C1606-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0			.003 Amp		30 ns
MT45W2MV16PABA-85IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	85 ns
MT58LC128K16D8LG-8.5TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX16	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0		YES		20 mm	5 ns
MT5C2565C-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0			.0003 Amp		20 ns
MT55L256L18FT-10PTR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0		YES		20 mm	7.5 ns
MT55L512Y32PB-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	133 MHz	14 mm	Not Qualified	16777216 bit	3.135 V		e0			.01 Amp	22 mm	4.2 ns
MT55L256Y72P-7.5H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1				22 mm	4.2 ns
MT5C1008DJ-15XT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.005 Amp		15 ns
MT5C1607-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		NO	.00025 Amp	31.495 mm	8 ns
MT5C1M4B2TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		1MX4	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		20.96 mm	35 ns
MT58LC32K32D7S25AWC2-8	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100	3.63 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN			YES
MT58LC128K32C6BG-11	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B119	3.6 V	2.4 mm	90 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	AUTOMATIC POWER DOWN	e0		YES	.01 Amp	20 mm	6 ns
MT56C2818EJ-24TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0		YES		19.1262 mm	24 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.