Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
.005 Amp |
20 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
54 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE |
.8 mm |
125 Cel |
256KX16 |
256K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J54 |
5.5 V |
3.81 mm |
10.21 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
22.25 mm |
35 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
1048576 words |
SEPARATE |
3.3 |
3.3 |
1 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
1MX1 |
1M |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T28 |
3.6 V |
4.32 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
NO |
.00005 Amp |
35.05 mm |
25 ns |
||||||||||||||
Micron Technology |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
210 mA |
524288 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e0 |
.03 Amp |
20 mm |
5 ns |
|||||||||||||||
Micron Technology |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
e0 |
YES |
.005 Amp |
20 mm |
7 ns |
|||||||||||||
Micron Technology |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX32 |
32K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
e0 |
YES |
20 mm |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
105 mA |
65536 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
262144 bit |
e0 |
.005 Amp |
20 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.61 mm |
7.67 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.0003 Amp |
15.9 mm |
25 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
262144 bit |
e0 |
.003 Amp |
25 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
200 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J52 |
3.465 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1179648 bit |
3.135 V |
e0 |
.002 Amp |
19.1262 mm |
7 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
720 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
4194304 bit |
.02 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
PSEUDO STATIC RAM |
OTHER |
54 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
1.8 |
1.8,1.8/3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA54,6X9,30 |
Other Memory ICs |
.75 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
-30 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B54 |
1.95 V |
1 mm |
6 mm |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE POSSIBLE |
e0 |
.00011 Amp |
8 mm |
70 ns |
||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
3.63 V |
3.68 mm |
10.21 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
YES |
20.98 mm |
20 ns |
||||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
e0 |
.0003 Amp |
45 ns |
||||||||||||||||||||||
Micron Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
Not Qualified |
4194304 bit |
e0 |
.002 Amp |
12 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
185 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T22 |
5.5 V |
4.32 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
TTL-COMPATIBLE INPUTS & OUTPUTS |
e0 |
NO |
.0003 Amp |
26.165 mm |
12 ns |
|||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
340 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
4194304 bit |
.0002 Amp |
17 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e0 |
YES |
20 mm |
8.5 ns |
|||||||||||||||||||||
Micron Technology |
ZBT SRAM |
COMMERCIAL |
165 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
262144 words |
COMMON |
3.3 |
2.5,3.3 |
32 |
GRID ARRAY, THIN PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B165 |
3.465 V |
1.2 mm |
90 MHz |
13 mm |
Not Qualified |
8388608 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.01 Amp |
15 mm |
8.5 ns |
||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1200 mA |
65536 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
12.954 mm |
Not Qualified |
2097152 bit |
e0 |
.04 Amp |
20 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
1048576 bit |
.01 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.003 Amp |
35 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
OPTIONAL INTERLEAVED OR LINEAR BURST |
e0 |
YES |
20 mm |
5 ns |
||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
65536 words |
COMMON |
3.3 |
3.3 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T28 |
3.6 V |
4.32 mm |
7.62 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
YES |
.00005 Amp |
36.83 mm |
15 ns |
||||||||||||||
|
Micron Technology |
PSEUDO STATIC RAM |
OTHER |
54 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
1.8 |
1.8,1.8/3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA54,6X9,30 |
Other Memory ICs |
.75 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
-30 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B54 |
1.95 V |
1 mm |
6 mm |
Not Qualified |
33554432 bit |
1.7 V |
SYNCHRONOUS BURST MODE POSSIBLE |
e1 |
260 |
.00011 Amp |
8 mm |
70 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
135 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX4 |
256K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00017 Amp |
18.44 mm |
25 ns |
||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1440 mA |
262144 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.494 mm |
Not Qualified |
8388608 bit |
.0024 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
PSEUDO STATIC RAM |
OTHER |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
4194304 words |
COMMON |
1.8 |
1.8,2.5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
Other Memory ICs |
.75 mm |
85 Cel |
3-STATE |
4MX16 |
4M |
-25 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1 mm |
6 mm |
Not Qualified |
67108864 bit |
1.7 V |
e0 |
.00012 Amp |
8 mm |
70 ns |
|||||||||||||||||
Micron Technology |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
e0 |
YES |
20 mm |
||||||||||||||||||||||
Micron Technology |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
190 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
113 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.03 Amp |
20 mm |
6.5 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65 mA |
262144 words |
COMMON |
3.3 |
3.3 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
256KX4 |
256K |
3 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
15 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
65536 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
-55 Cel |
QUAD |
R-XQCC-N28 |
Not Qualified |
262144 bit |
.008 Amp |
35 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
e0 |
.005 Amp |
20 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
131072 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N32 |
Not Qualified |
1048576 bit |
e0 |
.007 Amp |
45 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
256KX4 |
256K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
3.6 V |
3.68 mm |
10.21 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
YES |
18.44 mm |
25 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
110 mA |
65536 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T24 |
1 |
Not Qualified |
262144 bit |
.01 Amp |
35 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
525 mA |
262144 words |
COMMON |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
4718592 bit |
e0 |
.01 Amp |
2.8 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
77 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
UNCASED CHIP |
70 Cel |
3-STATE |
64KX18 |
64K |
0 Cel |
UPPER |
1 |
R-XUUC-N77 |
3.6 V |
Not Qualified |
1179648 bit |
3.135 V |
YES |
8.5 ns |
|||||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N32 |
Not Qualified |
65536 bit |
e0 |
.00025 Amp |
15 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
40 mA |
65536 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
3.63 V |
3.61 mm |
7.67 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
NO |
.00005 Amp |
15.9 mm |
25 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
110 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
4.32 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00015 Amp |
35.05 mm |
45 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
AUTOMOTIVE |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.007 Amp |
45 ns |
||||||||||||||||||||||
Micron Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
ZBT SRAM |
COMMERCIAL |
165 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5,3.3 |
32 |
GRID ARRAY, THIN PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B165 |
3.465 V |
1.2 mm |
166 MHz |
13 mm |
Not Qualified |
8388608 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
.01 Amp |
15 mm |
3.5 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e0 |
20 mm |
6 ns |
||||||||||||||||||||||||
Micron Technology |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.03 Amp |
20 mm |
7.5 ns |
||||||||||||||
Micron Technology |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX36 |
32K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
e0 |
YES |
20 mm |
7 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.