Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT58LC32K36D8LG-15	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN	e0		.01 Amp	20 mm	7 ns
MT5C6404C-20LXT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.00025 Amp		20 ns
MT58LC64K18D7LG-7LP	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	275 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100						Not Qualified	1179648 bit			e0				7 ns
MT5C6405EC-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0		.00025 Amp		35 ns
MT5C1009DJ-70LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES		20.98 mm	70 ns
MT5LC1M4C3DJ-55LXTTR	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.63 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0	YES		20.98 mm	55 ns
MT5C6406C-30L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0		.00025 Amp		30 ns
MT58LC128K36B3LG-9TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	YES		20 mm	9 ns
MT5C2568CW30L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	262144 bit			e0		.001 Amp		30 ns
MT5C2564SG-12LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.4 mm	12 ns
MT45W2ML16BFB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.00009 Amp	8 mm	70 ns
MT58LC64K18B2LG-10PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST	e0	YES		20 mm	10 ns
MT5LC512K8D4DJ-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		3.63 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0	YES	.0007 Amp	23.52 mm	35 ns
MT58L128L36F1B-6.8	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	425 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		.01 Amp	22 mm	6.8 ns
MT58LC32K32B4LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX8	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0		.01 Amp	20 mm	7.5 ns
MT5C2568-30LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0003 Amp	36.83 mm	30 ns
MT5C256K16B2TG-20PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	YES		22.25 mm	20 ns
MT5C2818EJ-15TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX18	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	15 ns
MT5C1001C55P/883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	1048576 bit					.01 Amp		55 ns
MT5C2561DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	262144 bit			e0		.005 Amp		12 ns
MT5LC1008DJ-45	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0		.0003 Amp		45 ns
MT58LC128K32F1LG-5.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	5.5 ns
MT58V1MV32PT-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	315 mA	1048576 words	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	2.38 V	0 Cel		QUAD		R-PQFP-G100	1	2.625 V	1.6 mm		14 mm	Not Qualified	33554432 bit	2.375 V	PIPELINED ARCHITECTURE			.03 Amp	20 mm	4 ns
MT58L256L32FT-8	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	6.8 ns
MT5LC1008SJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0		.003 Amp		15 ns
MT5C2561C-35	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	262144 bit			e0		.007 Amp		35 ns
MT5LC2568DJ-20PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.62 mm	Not Qualified	262144 bit	3 V			YES		18.44 mm
MT45W4ML16BFB-706IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.00012 Amp	8 mm	70 ns
MT5C2564-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V			NO		31.495 mm	15 ns
MT55L1MY32FT-10	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX32	1M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	33554432 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	7.5 ns
MT58LC64K18B4LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0		.01 Amp	20 mm	7.5 ns
MT58V1MV36PT-7.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	340 mA	1048576 words	COMMON		2.5/3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	1MX36	1M	2.38 V	-40 Cel		QUAD		R-PQFP-G100				133 MHz		Not Qualified	37748736 bit					.03 Amp		4 ns
MT5C2568-10LXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.0003 Amp	36.83 mm	10 ns
MT58LC256K18B3S27BDC7-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	79	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	256KX18	256K		0 Cel		UPPER	1	R-XUUC-N79		3.6 V				Not Qualified	4718592 bit	3.135 V			YES			8.5 ns
MT5C1607-35	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0		.003 Amp		35 ns
MT5C1M4A1DJ-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		20.98 mm	20 ns
MT5C2818EJ-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX18	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	20 ns
MT58LC64K18C4EJ-10	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.465 V	4.57 mm		19.125 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER	e0	YES	.002 Amp	19.125 mm	10 ns
MT55L128L18F1T-12T	Micron Technology	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX18	128K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V					20 mm	9 ns
MT58LC128K16E1LG-9	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX16	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	9 ns
MT58L32L36DT-6	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	340 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	3.5 ns
MT5C6401C-35XT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.005 Amp		35 ns
MT5C6408EC-25LXT	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0		.00025 Amp		25 ns
MT59L128L36PB-5TR	Micron Technology	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words				36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0	YES		22 mm
MT5C1008CW-25LXT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32						Not Qualified	1048576 bit			e0		.0005 Amp		25 ns
MT5C1009CW-45	Micron Technology	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32						Not Qualified	1048576 bit			e0		.007 Amp		45 ns
MT58LC128K18E1LG-7.5TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0	YES		20 mm
MT5C1009DJ-20LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES		20.98 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.