Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C1607DJ-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16384 bit			e0			.003 Amp		25 ns
MT58LC32K32C4S25AWC1-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN			YES
MT5LC2568-12L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0		YES	.0005 Amp	36.83 mm	12 ns
MT58LC64K16B3LG-11	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX16	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES	.005 Amp	20 mm	11 ns
MT5C1008EC20P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32	1					Not Qualified	1048576 bit						.01 Amp		20 ns
MT5C1008F20P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	FLATPACK	FL32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDFP-F32	1					Not Qualified	1048576 bit						.01 Amp		20 ns
MT5LC1005DJ-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0		YES	.00005 Amp	18.44 mm	20 ns
MT5C2561EC-45IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	256KX1	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	262144 bit			e0			.008 Amp		45 ns
MT5C2568C35L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	262144 bit			e0			.0005 Amp		35 ns
MT5LC2568Z-15LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		3.63 V	10.16 mm		2.8 mm	Not Qualified	262144 bit	3 V		e0		YES	.00005 Amp	35.455 mm	15 ns
MT58LC64K16E1S27BDC1	Micron Technology	STANDARD SRAM	COMMERCIAL	75	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	64KX16	64K		0 Cel		UPPER	1	R-XUUC-N75		3.6 V				Not Qualified	1048576 bit	3.135 V				YES
MT5C1001DJ-25LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0		NO		18.44 mm	25 ns
MT5LC1005DJ-45LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0		YES	.00005 Amp	18.44 mm	45 ns
MT5C1607-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		NO	.00025 Amp	31.495 mm	35 ns
MT5C6406C-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0			.00025 Amp		20 ns
MT5C1601EC-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20						Not Qualified	16384 bit			e0					12 ns
MT58LC32K32C4LG-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm	66 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES	.005 Amp	20 mm	7 ns
MT8LS132Z15LP	Micron Technology	SRAM MODULE	COMMERCIAL	72	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1400 mA	1048576 words	COMMON	3.3	3.3	32	IN-LINE	ZIP72/76,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T72						Not Qualified	33554432 bit			e0			.0024 Amp		15 ns
MT58LC64K32D9LG-6	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	2097152 bit	3.135 V		e0		YES	.01 Amp	20 mm	3.5 ns
MT45W2MV16BFB-601LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT55V512V36PT-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		2.625 V	1.6 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0			.03 Amp	20 mm	4.2 ns
MT5C6407DJ-25LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0		YES		18.44 mm	25 ns
MT58LC64K18A6EJ-5PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.465 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0		YES		19.1262 mm
MT5C2564DJ-15LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0		NO		15.9 mm	15 ns
MT45W4MW16BBB-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1	260		.0001 Amp	8 mm	85 ns
MT59L128L36PB-6	Micron Technology	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	440 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0		YES	.025 Amp	22 mm	3 ns
MT5C1001-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0		NO	.00015 Amp	35.05 mm	15 ns
MT5C6408EC-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0			.00025 Amp		25 ns
MT5LC1005SJ-25LPXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-55 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.67 mm	Not Qualified	1048576 bit	3 V				YES		18.44 mm	25 ns
MT5C6405DJ-8	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0			.003 Amp		8 ns
MT5C1008C-25LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32						Not Qualified	1048576 bit			e0			.0005 Amp		25 ns
MT58L512L18DT-10IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX18	512K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V						20 mm	5 ns
MT58L512Y36DF-10IT	Micron Technology
MT55L128L18P1T-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0			.01 Amp	20 mm	4.2 ns
MT5C1608C-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0			.00025 Amp		15 ns
MT5C1009CW-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32						Not Qualified	1048576 bit			e0			.0005 Amp		25 ns
MT58L1MY36FF-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1				17 mm	8.5 ns
MT58LC64K18M1LG-9L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST			YES		20 mm	9 ns
MT5C1605-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		YES	.00025 Amp	26.165 mm	8 ns
MT58V2MV18PT-5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	460 mA	2097152 words	COMMON		2.5/3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	2MX18	2M	2.38 V	-40 Cel		QUAD		R-PQFP-G100				200 MHz		Not Qualified	37748736 bit						.03 Amp		3.1 ns
MT5C512K8B2DJ20	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36						Not Qualified	4194304 bit			e0			.002 Amp		20 ns
MT5C6405EC-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0			.00025 Amp		25 ns
MT5LC1001DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	65 mA	1048576 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0		NO	.00005 Amp	18.44 mm	20 ns
MT5LC2565-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T28		3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V				YES		36.83 mm	15 ns
MT5C2565EC45P/883C	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel		QUAD		R-XQCC-N28						Not Qualified	262144 bit						.005 Amp		45 ns
MT5C6405DJ-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0		YES	.0003 Amp	15.9 mm	15 ns
MT58LC32K36F1LG-10	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	1179648 bit	3.135 V		e0		YES	.005 Amp	20 mm	5.5 ns
MT58LC32K36C5LG-8	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	150 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	50 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES	.005 Amp	20 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.