Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5LC1008W-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0			.0003 Amp		25 ns
MT5C2564-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	262144 bit			e0			.007 Amp		25 ns
MT58L512Y32PF-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX32	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		3.465 V	1.2 mm	200 MHz	13 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.01 Amp	15 mm	3.1 ns
MT58LC32K32G1LG-5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	32KX32	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES		20 mm
MT45W2MV16BAFB-601IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0				8 mm	60 ns
MT4S6416D-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40		5.5 V				Not Qualified	1048576 bit	4.5 V		e0		YES	.02 Amp		45 ns
MT58LC32K32B2S22BDC7-12	Micron Technology	STANDARD SRAM	COMMERCIAL	105	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP					70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N105		3.5 V				Not Qualified	1048576 bit	3.1 V				YES
MT5C1604C-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3		SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	16384 bit			e0					20 ns
MT5C2561DJ-20LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	256KX1	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0		NO		15.9 mm	20 ns
MT4C1026Z15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1		SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20						Not Qualified	1048576 bit			e0					150 ns
MT57W4MH9JF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		4MX9	4M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1				17 mm	.45 ns
MT5C2568C-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	262144 bit			e0			.008 Amp		35 ns
MT5C6404C-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0			.005 Amp		30 ns
MT5C2564-15PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE				2.54 mm	85 Cel	3-STATE	64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V				NO		31.495 mm	15 ns
MT45W1MW16BABB-706LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e1				8 mm	70 ns
MT58L64L18DT-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.01 Amp	20 mm	4.2 ns
MT55L128L18FT-10.5PTR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0		YES		20 mm	8 ns
MT58LC64K18M1EJ-14PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.465 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0		YES		19.1262 mm	14 ns
MT5C6401-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		NO	.0003 Amp	26.165 mm	12 ns
MT58LC32K32B2S25ADC3-11	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP					70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN			YES
TTS92256T-70M-16	Micron Technology	STANDARD SRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit						.0005 Amp		70 ns
MT58L128L36P1-4B	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	625 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				250 MHz		Not Qualified	4718592 bit			e0			.01 Amp		2.3 ns
MT58L256L18D1-6T	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	475 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				166 MHz		Not Qualified	4718592 bit			e0			.01 Amp		3.5 ns
MT58L1MY18DT-5IT	Micron Technology
MT5LC2565-25PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE				2.54 mm	85 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T28		3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V				YES		36.83 mm	25 ns
MT45W4MW16BBB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00012 Amp	8 mm	85 ns
MT58LC128K18G1LG-5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES		20 mm
MT58LC64K32D7LG-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				66 MHz		Not Qualified	2097152 bit			e0			.005 Amp		7 ns
MT59L256V18PB-5	Micron Technology	LATE-WRITE SRAM	COMMERCIAL	119	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.1 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0		YES	.025 Amp	22 mm	2.5 ns
MT5LC1005-17LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.4		SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		3.6 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0		YES	.00005 Amp	35.05 mm	17 ns
MT55L512L18PT-10	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.01 Amp	20 mm	5 ns
MT5C6404DJ-12XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	65536 bit			e0			.005 Amp		12 ns
MT55L128L36FT-10.5TR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0		YES		20 mm	8 ns
MT58LC128K36B2LG-11P	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm	67 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		YES	.002 Amp	20 mm	11 ns
MT5C6406EC-15IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0			.005 Amp		15 ns
MT5C1009DJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0			.005 Amp		25 ns
MT58LC32K32D7LG-8LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	32KX32	32K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0		YES		20 mm
MT2LSYT3272T4G-5L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2359296 bit	3.135 V				YES			5 ns
MT4LSYT6472T4G6L	Micron Technology	SRAM MODULE	COMMERCIAL	160	DIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1200 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	2 V	0 Cel		DUAL		R-PDMA-N160						Not Qualified	4718592 bit								6 ns
MT5C6405EC-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0			.005 Amp		12 ns
MT5C6401EC-20883C	Micron Technology	STANDARD SRAM	MILITARY	22	QCCN		RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5		SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22						Not Qualified	65536 bit			e0			.01 Amp		20 ns
MT5C6406-30XT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0			.005 Amp		30 ns
MT45W2MV16BFB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
MT2LSYT3264T1G-12L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2097152 bit	3.135 V				YES			12 ns
MT5C1008DCJ20XT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ		RECTANGULAR	CERAMIC	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-J32	1					Not Qualified	1048576 bit						.01 Amp		20 ns
MT5LC1001DJ-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	1048576 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	1048576 bit			e0			.0003 Amp		35 ns
MT45W1ML16PAFA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0				8 mm	60 ns
MT5C1009C-55P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4		SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDIP-T32						Not Qualified	1048576 bit						.01 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.