Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT58L512V36FT-6.8	Micron Technology
MT5C1008-25LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.00017 Amp	40.135 mm	25 ns
MT5C2561-25LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0004 Amp	31.495 mm	25 ns
MT58LC64K18B3LG-12	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	150 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	12 ns
MT58LC64K18D8LG-8TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT5LC1005SJ-17LXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-55 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.67 mm	Not Qualified	1048576 bit	3 V			YES		18.44 mm	17 ns
MT58LC64K36D8LG-6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	6 ns
MT58L256V36FS-10.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	94 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	9 ns
MT5C1009-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32		5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES	.0002 Amp	40.135 mm	35 ns
MT57L128H36PB-6	Micron Technology	CACHE SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	620 mA	131072 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	3.1 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B153		3.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V		e0		.025 Amp	22 mm
MT5C1605EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22						Not Qualified	16384 bit			e0		.00025 Amp		30 ns
MT5C1607-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0		.003 Amp		15 ns
MT5C2561DJ-25LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	25 ns
MT5C1608-10LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.00025 Amp	31.495 mm	10 ns
MT5C6408ECW-20LXT	Micron Technology	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32						Not Qualified	65536 bit			e0		.00025 Amp		20 ns
MT58LC128K18B4LG-8.5TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0	YES		20 mm	8.5 ns
MT55L256V36FT-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	90 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.01 Amp	20 mm	8.5 ns
MT5C1005DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	1048576 bit			e0		.005 Amp		12 ns
MT57W1MH36CF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			17 mm	.45 ns
MT5C2568-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	262144 bit			e0		.005 Amp		30 ns
MT5C2561DJ-35LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	35 ns
MT5C1604-15XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	175 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	16384 bit			e0				15 ns
MT5C1604DJ-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16384 bit			e0				15 ns
MT5C256K16B2DJ-25LXTTR	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J54		5.5 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		22.25 mm	25 ns
MT58LC64K18B2LG-12TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT5C1001EC35P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel		DUAL		R-XDSO-N32						Not Qualified	1048576 bit					.01 Amp		35 ns
MT2LSYT3264C4G-5P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX64	32K		0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			5 ns
MT5LC2564SG-20LPXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.63 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	3 V		e0	NO	.00005 Amp	15.4 mm	20 ns
MT56C0818LG-25TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK			.65 mm	70 Cel	3-STATE	8KX18	8K		0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52		5.25 V	2.44 mm		10 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		10 mm	25 ns
MT55L512L18PT-10Z	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V		e0		.01 Amp	20 mm	5.2 ns
MT5C6408DJ-8AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0		.003 Amp		8 ns
MT45W2ML16BABB-706LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1			8 mm	70 ns
MT5C1009-25LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32		5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES	.0002 Amp	40.135 mm	25 ns
MT5C1M4A1DJ55IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	4194304 bit			e0				55 ns
MT5LC2564DJ-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	262144 bit			e0		.0003 Amp		20 ns
MT5C1604DJ-15LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	15 ns
MT58LC256K16B3S27BDC1	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K		0 Cel		UPPER	1	R-XUUC-N77		3.6 V				Not Qualified	4194304 bit	3.135 V			YES
MT5C4005DJ-55AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	4194304 bit			e0				55 ns
MT58L512Y36DF-7.5IT	Micron Technology
MT2LSYT3264T6G-5L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2097152 bit	3.135 V			YES			5 ns
MT4LS12832M-17L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE	1	R-XSMA-N64		3.6 V	15.113 mm			Not Qualified	4194304 bit	3 V			YES	.0002 Amp		17 ns
MT5C1604-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	20 ns
MT5C1001SJ-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	1048576 bit			e0		.007 Amp		35 ns
MT5C1606DJ-15XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16384 bit			e0		.003 Amp		15 ns
MT58LC32K32C4S25AWC2-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN		YES
MT5C1008DCJ35/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-J32	1					Not Qualified	1048576 bit					.01 Amp		35 ns
MT5C2565DJ-12LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64KX4	64K	2 V	0 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	4.5 V			YES		18.44 mm	12 ns
MT5LC1001SJ-45LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	85 Cel		1MX1	1M	2 V	-40 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.67 mm	Not Qualified	1048576 bit	3 V			NO		18.44 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.