Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C1608C-35XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0				.003 Amp		35 ns
MT5C2568ECW-30LXT	Micron Technology	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32						Not Qualified	262144 bit			e0				.0003 Amp		30 ns
MT5C2565DJ-20PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K		-40 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V					YES		18.44 mm	20 ns
MT45W1ML16PAFA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0				.00007 Amp	8 mm	85 ns
MT5C1001DCJ20P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel		DUAL		R-XDSO-J32						Not Qualified	1048576 bit							.01 Amp		20 ns
MT5C2565EC-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	262144 bit			e0				.0003 Amp		35 ns
MT5C1001DJ-20LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0			NO		18.44 mm	20 ns
MT5C1606-10L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO	.00025 Amp	31.495 mm	10 ns
MT5LC256K16D4DJ-12LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54						Not Qualified	4194304 bit			e0				.0007 Amp		12 ns
MT58LC256K18E1BG-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	113 MHz	14 mm	Not Qualified	2359296 bit	3.135 V		e0			YES	.01 Amp	22 mm	7.5 ns
MT5LC2568Z-20XT	Micron Technology	STANDARD SRAM	MILITARY	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28						Not Qualified	262144 bit			e0				.0003 Amp		20 ns
MT5LC1001-45IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	1048576 bit			e0				.0003 Amp		45 ns
MT58L128L36PB-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1					22 mm	3.5 ns
MT2LSYT3272T6G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	700 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2359296 bit	3.135 V					YES	.01 Amp		6 ns
MT5C1009-45DJLIT	Micron Technology
MT5LC2568DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0			YES	.00005 Amp	18.44 mm	35 ns
MT5C4108DJ-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V					YES		23.52 mm	15 ns
MT58LC256K16C5LG-8.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX16	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0			YES	.005 Amp	20 mm	5 ns
MT58L512L18FS-10.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	94 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0				.01 Amp	20 mm	9 ns
MT5C6407DJ-12LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0			YES		18.44 mm	12 ns
MT5C2568-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	195 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	262144 bit			e0				.007 Amp		12 ns
MT5C2568-10PXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-PDIP-T28		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS						36.83 mm	10 ns
MT45W2MW16PBA-60WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1	30	260			8 mm	60 ns
MT57W1MH36CF-3	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1					17 mm	.45 ns
MT5C256K16B2DJ-12L	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54		5.5 V	3.81 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.001 Amp	22.25 mm	12 ns
MT55L2MY18PF-10IT	Micron Technology
MT5C6401-8XT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22						Not Qualified	65536 bit			e0				.003 Amp		8 ns
MT2LSYT3272T4G-8L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2359296 bit	3.135 V					YES			8 ns
MT5C1009-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0				.005 Amp		25 ns
MT5C2564DJ-35LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0			NO		15.9 mm	35 ns
MT5C1001-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	1048576 bit			e0				.007 Amp		25 ns
MT5C2564DJ-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	262144 bit			e0				.007 Amp		25 ns
MT5C6408ECW-45883C	Micron Technology	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0				.01 Amp		45 ns
MT5C2568Z-45LXT	Micron Technology	STANDARD SRAM	MILITARY	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm		2.794 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.0003 Amp	40.135 mm	45 ns
MT5C6405C-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	65536 bit			e0				.00025 Amp		35 ns
MT5C1005DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00017 Amp	18.44 mm	35 ns
MT5LC256K4D4DJ-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.63 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0			YES		20.98 mm	20 ns
MT55V512V32FB-10	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	2.5	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.625 V	2.4 mm	100 MHz	14 mm	Not Qualified	16777216 bit	2.375 V		e0				.01 Amp	22 mm	7.5 ns
MT58LC32K32B3S27BWC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	92	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N92		3.6 V				Not Qualified	1048576 bit	3.135 V					YES
MT58L512L18PB-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0				.01 Amp	22 mm	4 ns
MT5LC1001-45LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		3.6 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0			NO	.00005 Amp	35.05 mm	45 ns
MT58V2MV18PF-10	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	280 mA	2097152 words	COMMON	2.5	2.5/3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B165	1	2.625 V	1.2 mm	100 MHz	15 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.03 Amp	17 mm	5 ns
MT58LC32K36C5LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN	e0				.01 Amp	20 mm	4.5 ns
5962-8969106YX	Micron Technology	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER				125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N32		5.5 V				Not Qualified	65536 bit	4.5 V								15 ns
MT5C1M4B2DJ-12P	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.002 Amp	20.98 mm	12 ns
MT58LC64K32D7LG-4.5LP	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				125 MHz		Not Qualified	2097152 bit			e0						4.5 ns
MT58LC32K32D7LG-7P	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0			YES	.002 Amp	20 mm	7 ns
MT58LC256K18E1LG-12TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER-DOWN	e0			YES		20 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.