Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C2564DJ-12LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	12 ns
MT5LC2561DJ-15LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	SMALL OUTLINE			1.27 mm	125 Cel		256KX1	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0	NO		15.9 mm	15 ns
MT58L128V32F1B-10	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	66 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		.01 Amp	22 mm	10 ns
MT5C2564SG-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	262144 bit			e0		.005 Amp		30 ns
MT59L128H36FB-4.5TR	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm			128KX36	128K			TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0			22 mm	6.5 ns
MT58LC256K16B3S27BDC7-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K		0 Cel		UPPER	1	R-XUUC-N77	3.6 V				Not Qualified	4194304 bit	3.135 V			YES			8.5 ns
MT8S6432Z-35P	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	920 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64	5.5 V	12.954 mm			Not Qualified	2097152 bit	4.5 V		e0	YES	.003 Amp		35 ns
MT58LC64K32G1LG-5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX32	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT5C2564C25P/883C	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T24					Not Qualified	262144 bit					.005 Amp		25 ns
MT58L256V36PT-7.5IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE				20 mm	4 ns
MT8S6432Z-30L	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	760 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64	5.5 V	12.7 mm			Not Qualified	2097152 bit	4.5 V	CONFIGURABLE AS 64K X 32	e0	YES	.0024 Amp		30 ns
MT58LC128K16C5LG-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	230 mA	131072 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX16	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	7 ns
MT55V1MV36FT-11IT	Micron Technology
MT58LC32K36B3LG-8.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	32KX36	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm	8.5 ns
MT5C1001DJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit			e0		.005 Amp		25 ns
MT5C6404-8LXT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.00025 Amp	26.165 mm	8 ns
MT58LC128K36C6LG-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0	YES	.01 Amp	20 mm	4.5 ns
MT58L64V32PF-5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64KX32	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	2097152 bit	3.135 V		e1			15 mm	3.5 ns
MT5C2565DJ-15LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0004 Amp	18.44 mm	15 ns
MT58LC128K36B3S27BWC2-10	Micron Technology	STANDARD SRAM	COMMERCIAL	98	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	128KX36	128K		0 Cel		UPPER	1	X-XUUC-N98	3.6 V				Not Qualified	4718592 bit	3.135 V			YES			10 ns
MT5C6405DJ-15LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES		15.9 mm	15 ns
MT5C6405DJ-25LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES		15.9 mm	25 ns
MT4LS12832M-25	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm			Not Qualified	4194304 bit					.0012 Amp		25 ns
MT4S12832M-35LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V	15.113 mm			Not Qualified	4194304 bit	4.5 V			YES	.0006 Amp		35 ns
MT58LC64K18A6LG-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel		QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES		20 mm	8 ns
MT58LC128K32B2LG-14LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e0	YES		20 mm	14 ns
MT58LC32K32B2S25AWC1-12	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100	3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN		YES
MT5LC1005DJ-15LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.68 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0	YES	.00005 Amp	18.44 mm	15 ns
MT5LC1005DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0	YES	.00005 Amp	18.44 mm	20 ns
MT58L512V18DT-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	3.8 ns
MT5C2565C-45IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0		.008 Amp		45 ns
MT58LC128K36E1LG-6.8TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX36	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0	YES		20 mm	6.8 ns
MT5C2561EC-55L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0		.0005 Amp		55 ns
MT58L256L18P1-6B	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	475 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119			166 MHz		Not Qualified	4718592 bit			e0		.01 Amp		3.5 ns
MT57W1MH18BF-4	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	1.9 V	1.2 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		.2 Amp	15 mm	.45 ns
MT58L256L32FB-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	GRID ARRAY			1.27 mm	85 Cel		256KX32	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	8388608 bit	3.135 V		e1			22 mm	10 ns
MT5LC256K4D4DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.16 mm	Not Qualified	1048576 bit	3 V			YES		20.98 mm
MT58LC64K18D8LG-11	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm	90 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN	e0		.01 Amp	20 mm	6 ns
MT5C512K8B2TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	YES		23.52 mm	35 ns
MT5C1005DJ-45LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00015 Amp	18.44 mm	45 ns
MT55L1MY32PF-10IT	Micron Technology
MT58L128L32F1T-7.5TR	Micron Technology	STANDARD SRAM
MT45W4MW16BFB-858LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.0001 Amp	8 mm	85 ns
MT58L256V32FB-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	375 mA	262144 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	113 MHz	14 mm	Not Qualified	8388608 bit	3.135 V		e0		.01 Amp	22 mm	7.5 ns
MT58L1MY36FF-6.8	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1			17 mm	6.8 ns
MT5C1604DJ-10XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16384 bit			e0				10 ns
MT5C1008-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.001 Amp	40.135 mm	25 ns
MT5LC1005-45	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	1048576 bit			e0		.0003 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.