Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT57W1MH36CF-4	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			17 mm	.45 ns
MT5LC1M4D4DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	2 V	-55 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V			YES		20.98 mm	20 ns
MT59L256H18FB-6TR	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm			256KX18	256K			TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0			22 mm	7.5 ns
MT5C2565DJ-15PXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V			YES		18.44 mm	15 ns
MT58LC32K32B3S27BDC2-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	92	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N92		3.6 V				Not Qualified	1048576 bit	3.135 V			YES
MT5LC2565DJ-25PXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K		-55 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V			YES		18.44 mm	25 ns
MT58L512Y36PT-6IT	Micron Technology
MT5C6407DJ-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	15 ns
MT59L128L36PB-7TR	Micron Technology	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words				36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0	YES		22 mm
MT58LC32K36C4LG-6P	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.7X.9	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm	83 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES	.002 Amp	20 mm	6 ns
MT58L1MY36FT-10	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX36	1M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	10 ns
MT5C2564DJ-35LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	35 ns
MT5C1605C-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	16384 bit			e0		.00025 Amp		30 ns
MT5C1608C-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0		.00025 Amp		30 ns
MT5C6401C-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.005 Amp		25 ns
MT5C1009CW-45XT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDIP-T32						Not Qualified	1048576 bit					.01 Amp		45 ns
MT58LC32K32C4S25ADC3-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN		YES
MT5C1009C-45L/883C	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-XDIP-T32						Not Qualified	1048576 bit					.001 Amp		45 ns
MT58LC64K18M1LG-10P	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST		YES		20 mm	10 ns
MT5C1008C45P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDIP-T32	1					Not Qualified	1048576 bit					.01 Amp		45 ns
MT5LC1005DJ-17LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V		e0	YES		18.44 mm	17 ns
MT5C6406-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0		.003 Amp		35 ns
MT58L1MY18FF-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	200 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		3.465 V	1.2 mm	113 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.03 Amp	15 mm	7.5 ns
MT5C2568F20L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	262144 bit			e0		.0005 Amp		20 ns
MT5C1005EC20P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-55 Cel		DUAL		R-XDSO-N32						Not Qualified	1048576 bit					.01 Amp		20 ns
MT58LC64K36G1LG-5.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	5.5 ns
TTS92256GK-20C-21	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit					.0003 Amp		20 ns
MT5LC1M4C3DJ20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	4194304 bit			e0				20 ns
MT5C1604-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	35 ns
MT54V1MH18EF-10	Micron Technology	QDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	200 mA	1048576 words	SEPARATE	2.5	1.5/1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		2.6 V	1.2 mm	100 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0		.11 Amp	15 mm	3 ns
MT58L256V32PQ-5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	525 mA	262144 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE; AUTOMATIC POWER DOWN	e0		.01 Amp	20 mm	3.1 ns
MT5C2561-10LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0003 Amp	31.495 mm	10 ns
MT5C6404C-35LXT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.00025 Amp		35 ns
MT5LC2561-20PXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	IN-LINE			2.54 mm	125 Cel		256KX1	256K		-55 Cel		DUAL	1	R-PDIP-T24		3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V			NO		31.495 mm
MT58LC64K16E1LG-10	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	2.5,3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX16	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0	YES	.005 Amp	20 mm	10 ns
MT5C1005DJ-25LXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.001 Amp	18.44 mm	25 ns
MT58LC32K36C4S25ADC2-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	32KX36	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN		YES			7 ns
MT5LC256K4D4TG-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0	YES		20.96 mm	25 ns
MT55L128L32PT-10TR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX32	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e0	YES		20 mm	5 ns
MT5C1608EC-25XT	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	16384 bit			e0		.003 Amp		25 ns
MT5C1601EC25L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20						Not Qualified	16384 bit			e0				25 ns
MT5C2564DJ-15LPXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0005 Amp	15.9 mm	15 ns
MT5C2568EC70P/883C	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N28						Not Qualified	262144 bit					.005 Amp		70 ns
MT5C6405EC-20IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0		.005 Amp		20 ns
MT5C2568C35XT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	262144 bit			e0		.008 Amp		35 ns
MT5C6401C-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.00025 Amp		12 ns
MT5C256K16B2DJ-12PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL	1	R-PDSO-J54		5.5 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		22.25 mm	12 ns
MT45W2ML16PAFA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0		.00011 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.