Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT55L256V36PB-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V		e1			22 mm	3.5 ns
MT5LC2565DJ-15LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.63 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	18.44 mm	15 ns
MT5LC2565-25LPXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.63 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	36.83 mm	25 ns
MT58L128L32D1F-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		128KX32	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	4194304 bit	3.135 V		e1			15 mm	3.5 ns
MT58LC32K32B2S22BDC1	Micron Technology	STANDARD SRAM	COMMERCIAL	105	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N105	3.5 V				Not Qualified	1048576 bit	3.1 V			YES
MT5C2564-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V			NO		31.495 mm	35 ns
MT5C2564DJ-20LPXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	20 ns
MT58LC64K18F5EJ-20	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52	3.465 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0		.002 Amp	19.1262 mm	20 ns
MT58LC32K32B3S27BDC3-11	Micron Technology	STANDARD SRAM	COMMERCIAL	92	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N92	3.6 V				Not Qualified	1048576 bit	3.135 V			YES
MT58LC1616LG-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK			1 mm	70 Cel		16KX16	16K		0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52	3.63 V	2.45 mm		14 mm	Not Qualified	262144 bit	3 V	BYTE WRITE	e0	YES		14 mm
MT5C1601-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.00025 Amp	26.165 mm	35 ns
MT55L128L18F1T-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0		.01 Amp	20 mm	8.5 ns
MT58LC128K32D8LG-5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	5 ns
MT5C2561DJ-10LPITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel		256KX1	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V			NO		15.9 mm	10 ns
MT58L256V32PB-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	22 mm	4 ns
MT5C1008SJ-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.001 Amp	20.98 mm	25 ns
MT5C1001-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0	NO	.00015 Amp	35.05 mm	20 ns
MT58L512V18DQ-5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	INTERNALLY SELF-TIMED WRITE CYCLE; AUTOMATIC POWER-DOWN; BYTE WRITE CONTROL	e0		.01 Amp	20 mm	3.1 ns
MT58L256L32PT-6IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX32	256K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE				20 mm	3.5 ns
MT5LC1001SJ-17LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	2 V	-40 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.66 mm		7.67 mm	Not Qualified	1048576 bit	3 V			NO		18.44 mm	17 ns
MT5LC1M4D4DJ-15PXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M		-55 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V			YES		20.98 mm	15 ns
MT58LC128K16E1S27BWC2-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	76	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		131072 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	128KX16	128K		0 Cel		UPPER	1	X-XUUC-N76	3.6 V				Not Qualified	2097152 bit	3.135 V			YES			8.5 ns
MT5C1189DJ-25LXTTR	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	128KX9	128K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1179648 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES		20.98 mm	25 ns
MT5C2564EC-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0		.0003 Amp		35 ns
MT58LC64K18E1LG-8.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		20 mm	8.5 ns
MT58L512Y32PT-5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	3.1 ns
MT58LC128K32G1BG-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	325 mA	131072 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B119	3.6 V	2.4 mm	133 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	AUTOMATIC POWER DOWN	e0	YES	.01 Amp	22 mm	4.2 ns
MT58L32L36FT-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	245 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0		.01 Amp	20 mm	7.5 ns
MT58L128L32D1B-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	375 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	133 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		.01 Amp	22 mm	4 ns
MT5C1606EC-12IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	16384 bit			e0		.003 Amp		12 ns
MT45W1MW16BAFB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0			8 mm	70 ns
MT58LC32K32B2LG-12LP	Micron Technology	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100					Not Qualified	1048576 bit			e0				12 ns
MT5C1601-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	16384 bit			e0		.005 Amp		25 ns
MT58LC64K36B3S27BDC2-10	Micron Technology	STANDARD SRAM	COMMERCIAL	97	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	64KX36	64K		0 Cel		UPPER	1	X-XUUC-N97	3.6 V				Not Qualified	2359296 bit	3.135 V			YES
MT58L64L32PF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm	200 MHz	13 mm	Not Qualified	2097152 bit	3.135 V		e0		.01 Amp	15 mm	3.5 ns
MT45W1MW16BDGB-701WTMS	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e1			8 mm	70 ns
MT5C6408CW-30L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0		.0005 Amp		30 ns
MT57L256L18PB-8TR	Micron Technology	CACHE SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm			256KX18	256K			TIN LEAD	BOTTOM		R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0			22 mm
MT5LC512K8C3DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	3.63 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0	YES		20.98 mm	20 ns
MT5LC1M4D4DJ-12PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-40 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V			YES		20.98 mm	12 ns
MT5C2568EC20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0		.0003 Amp		20 ns
MT5LC1008DJ-17LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K	2 V	-55 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	3 V			YES		20.98 mm	17 ns
MT55L128L32F1T-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.6 mm	90 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.01 Amp	20 mm	8.5 ns
MT5C6408EC-15XT	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0		.005 Amp		15 ns
MT58LC64K36C5LG-8.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	65536 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN	e0		.01 Amp	20 mm	5 ns
MT5C2565C70/883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0		.01 Amp		70 ns
MT5C1606-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.00025 Amp	31.495 mm	20 ns
MT5C6405DJ-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.0003 Amp	15.9 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.