Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
135 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
262144 bit |
4.5 V |
e0 |
240 |
YES |
.0008 Amp |
37.211 mm |
45 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.015 Amp |
17.9324 mm |
15 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
30 |
260 |
.006 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
85 Cel |
2KX8 |
2K |
-40 Cel |
Tin (Sn) |
QUAD |
S-PQFP-G52 |
3 |
5.5 V |
16384 bit |
4.5 V |
e3 |
NOT SPECIFIED |
260 |
55 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
4.572 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
19.1262 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
1048576 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
2 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.7 V |
.000008 Amp |
18.4 mm |
45 ns |
|||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
20 mm |
10 ns |
|||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
262144 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
4194304 bit |
2.7 V |
YES |
.000007 Amp |
18.41 mm |
45 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
4194304 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
Matte Tin (Sn) - annealed |
3 |
e3 |
40 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
20 mm |
10 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
235 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
515 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
12 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.04 Amp |
20.995 mm |
15 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-G44 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
18.41 mm |
12 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
3 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
.01 Amp |
20.96 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE ORGANISED AS 2M X 8 |
YES |
.0003 Amp |
18.4 mm |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
262144 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.015 Amp |
17.9324 mm |
15 ns |
|||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
YES |
.02 Amp |
18.41 mm |
10 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
4194304 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e6 |
.00001 Amp |
18.4 mm |
70 ns |
|||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e6 |
.00002 Amp |
18.4 mm |
70 ns |
|||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
10 mm |
20 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
3.05 mm |
11.4 mm |
Not Qualified |
4194304 bit |
4.5 V |
.00001 Amp |
20.75 mm |
55 ns |
||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.5 mm |
8388608 bit |
2.7 V |
IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS |
e1 |
YES |
.00001 Amp |
8.5 mm |
45 ns |
||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
e1 |
30 |
260 |
.015 Amp |
15 mm |
10 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
2 |
R-PDIP-T48 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
NOT SPECIFIED |
260 |
.004 Amp |
61.849 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
30 |
260 |
YES |
.003 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
360 mA |
65536 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
4194304 bit |
3 V |
e3 |
30 |
260 |
18.41 mm |
10 ns |
||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
275 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
PGA68,11X11 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQCC-J68 |
3 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e3 |
260 |
.01 Amp |
20 ns |
|||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.04 Amp |
20.995 mm |
15 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
PGA |
SQUARE |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
275 mA |
32768 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-PPGA-P68 |
Not Qualified |
262144 bit |
e3 |
.01 Amp |
20 ns |
||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.