Renesas Electronics SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

5962-8855204XA

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Qualified

262144 bit

4.5 V

e0

240

YES

.0008 Amp

37.211 mm

45 ns

71321LA25PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

85 Cel

3-STATE

2KX8

2K

2 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

30

260

.004 Amp

14 mm

25 ns

IDT71256SA15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

YES

.015 Amp

17.9324 mm

15 ns

IDT70V27L20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

230 mA

32768 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

32KX16

32K

3 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

524288 bit

3 V

e3

30

260

.006 Amp

14 mm

20 ns

71321LA55PPGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

85 Cel

2KX8

2K

-40 Cel

Tin (Sn)

QUAD

S-PQFP-G52

3

5.5 V

16384 bit

4.5 V

e3

NOT SPECIFIED

260

55 ns

7130LA25JGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQCC-J52

3

5.5 V

4.572 mm

19.1262 mm

Not Qualified

8192 bit

4.5 V

e3

30

260

.004 Amp

19.1262 mm

25 ns

R1LV1616HSA-4SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

2

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

.000008 Amp

18.4 mm

45 ns

IDT71V547S100PFGI8

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX36

128K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

20 mm

10 ns

RMLV0416EGSB-4S2#AA1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

262144 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

DUAL

1

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

4194304 bit

2.7 V

YES

.000007 Amp

18.41 mm

45 ns

IDT71256SA15YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

15 ns

R1LP0408DSP-5SI#B1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

4194304 bit

4.5 V

55 ns

71V424S10PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

180 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

18.41 mm

10 ns

71256SA20YGI8

Renesas Electronics

STANDARD SRAM

Matte Tin (Sn) - annealed

3

e3

40

260

71321LA25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

85 Cel

3-STATE

2KX8

2K

2 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

16384 bit

4.5 V

e3

30

260

.004 Amp

14 mm

25 ns

IDT71V424S10PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

180 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

18.41 mm

10 ns

IDT71V547S100PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX36

128K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

20 mm

10 ns

7008L20PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

335 mA

65536 words

COMMON

5

5

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

524288 bit

4.5 V

e3

30

260

.01 Amp

14 mm

20 ns

70V28L15PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

235 mA

65536 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

1048576 bit

3 V

e3

30

260

.003 Amp

14 mm

15 ns

70V631S12PRFGI

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

128

LFQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

515 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP128,.63X.87,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX18

256K

3.15 V

-40 Cel

MATTE TIN

QUAD

2

R-PQFP-G128

3

3.45 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.15 V

e3

30

260

.015 Amp

20 mm

12 ns

71024S15TYGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

YES

.04 Amp

20.995 mm

15 ns

IDT71016S12PHG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

210 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-G44

3

5.5 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

YES

.01 Amp

18.41 mm

12 ns

RMLV3216AGSA-5S2#KA0

Renesas Electronics

STANDARD SRAM

3

7008L20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

335 mA

65536 words

COMMON

5

5

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

524288 bit

4.5 V

e3

30

260

.01 Amp

14 mm

20 ns

71V124SA12TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

IDT71024S15TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

5.5 V

3.76 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

20.96 mm

15 ns

IDT71256SA20YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

20 ns

RMLV1616AGSA-5S2#KA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

1MX16

1M

2.7 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE ORGANISED AS 2M X 8

YES

.0003 Amp

18.4 mm

55 ns

71256SA15YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

8

SMALL OUTLINE

SOJ28,.34

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

262144 bit

4.5 V

e3

40

260

YES

.015 Amp

17.9324 mm

15 ns

IDT71V416S10PHG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

YES

.02 Amp

18.41 mm

10 ns

IDT71V67803S133PFGI8

Renesas Electronics

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

280 mA

524288 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

133 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.07 Amp

20 mm

4.2 ns

R1LP0408DSP-5SI#S1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

4194304 bit

4.5 V

55 ns

UPD431000AGZ-70LL-KJH-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e6

.00001 Amp

18.4 mm

70 ns

UPD431000AGZ-70X-KJH-A

Renesas Electronics

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e6

.00002 Amp

18.4 mm

70 ns

71321LA20TFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP64,.47SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

10 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

30

260

.004 Amp

10 mm

20 ns

R1LP0408DSP-5SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

3.05 mm

11.4 mm

Not Qualified

4194304 bit

4.5 V

.00001 Amp

20.75 mm

55 ns

RMLV0816BGBG-4S2#KC0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

8388608 bit

2.7 V

IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS

e1

YES

.00001 Amp

8.5 mm

45 ns

70V631S10BFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

208

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

3.15 V

0 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B208

3

3.45 V

1.7 mm

15 mm

Not Qualified

4718592 bit

3.15 V

e1

30

260

.015 Amp

15 mm

10 ns

7130LA55PDGI

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

2

R-PDIP-T48

1

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e3

NOT SPECIFIED

260

.004 Amp

61.849 mm

55 ns

70V261L25PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

185 mA

16384 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

16KX16

16K

3 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

262144 bit

3 V

e3

30

260

YES

.003 Amp

14 mm

25 ns

7038L20PFGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

360 mA

65536 words

COMMON

5

5

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX18

64K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

1179648 bit

4.5 V

e3

30

260

.003 Amp

14 mm

20 ns

70V28L20PFGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

65536 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

1048576 bit

3 V

e3

30

260

.003 Amp

14 mm

20 ns

71V124SA12TYGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

71V416S10PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

4194304 bit

3 V

e3

30

260

18.41 mm

10 ns

7007L20JGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

275 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

PGA68,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-PQCC-J68

3

5.5 V

Not Qualified

262144 bit

4.5 V

e3

260

.01 Amp

20 ns

71024S15TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

YES

.04 Amp

20.995 mm

15 ns

71V124SA12PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

12 ns

IDT7007L20JGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

275 mA

32768 words

COMMON

5

5

8

GRID ARRAY

PGA68,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

PERPENDICULAR

2

S-PPGA-P68

Not Qualified

262144 bit

e3

.01 Amp

20 ns

70V25L25PFGI

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

180 mA

8192 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

8KX16

8K

3 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

131072 bit

3 V

e3

30

260

.0025 Amp

14 mm

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.