Renesas Electronics SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71016S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	15 ns
71V124SA10PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
71V67703S75PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.07 Amp	20 mm	7.5 ns
IDT71V124SA10PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3.15 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
IDT71V124SA12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IDT71V67703S75PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.07 Amp	20 mm	7.5 ns
70T3519S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	15 ns
70V06L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE				.8 mm	85 Cel		16KX8	16K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	NOT SPECIFIED	260			14 mm	20 ns
7130LA20JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
71V3576S150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	3.8 ns
71V3576S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp		3.8 ns
IDT7130LA100PFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	14 mm	100 ns
IDT7130LA100PI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	61.849 mm	100 ns
IDT71V124SA15PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
IDT71V3576S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	4718592 bit			e3	30	260		.035 Amp		3.8 ns
R1RW0416DSB-2LR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE					70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44	3	3.6 V					4194304 bit	3 V								12 ns
70V27L15PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	FLATPACK					85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								15 ns
70V3589S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
71024S12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	12 ns
71024S20TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	20 ns
71256SA25TPGI	Renesas Electronics	STANDARD SRAM																													Matte Tin (Sn) - annealed				1									e3	NOT SPECIFIED	260
71V124SA12TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
71V124SA12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
71V124SA15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
71V35761S200PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.1 ns
71V416L10PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	10 ns
IDT71024S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.96 mm	12 ns
IDT71V124SA12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IDT71V256SA15PZGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3			YES	.002 Amp	11.8 mm	15 ns
R1WV6416RSD-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V				260		.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2.7 V	0 Cel		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V						.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
70261L15PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	16384 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V	SEMAPHORE	e3	30	260		.005 Amp	14 mm	15 ns
70V3399S133BFI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
70V659S12DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V		e3		260		.015 Amp	28 mm	12 ns
71024S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.04 Amp	20.995 mm	15 ns
71256SA20PZGI8	Renesas Electronics	STANDARD SRAM																													Matte Tin (Sn) - annealed				3									e3	40	260
71V016SA20PHGI	Renesas Electronics	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		1048576 bit	3.15 V		e3	30	260	YES	.01 Amp	18.41 mm	20 ns
71V124SA10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
71V35761S183PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	3.3 ns
71V424S12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
71V67603S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.07 Amp	20 mm	3.8 ns
71V67703S80PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.07 Amp	20 mm	8 ns
IDT70V3399S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V639S10PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	Matte Tin (Sn)	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3	30	260		.015 Amp	20 mm	10 ns
IDT70V639S10PRFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3	30	260		.015 Amp	20 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.