STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z128V-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDMA-P32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	120 ns
M48Z512A-85CS9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z32V-35MT6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		e0				.0005 Amp	18.1 mm	35 ns
M48Z35-70PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			YES		39.625 mm	70 ns
M48Z58Y-70MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z08Y-10MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words	5	5	8	SMALL OUTLINE	DIP28,.6	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	100 ns
M48Z35AV-70MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE				85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z32V-35MT6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		e0				.0005 Amp	18.1 mm	35 ns
M48Z2M1V-70PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		8	IN-LINE			2.54 mm			2MX8	2M		TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
M48Z512AY-70PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm		3-STATE	512KX8	512K			DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP				YES		42.8 mm	70 ns
M48Z2M1-70PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0			YES	.008 Amp	52.96 mm	70 ns
M48Z32Y-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION				YES			100 ns
M48Z512AY-70PM6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						.005 Amp	42.8 mm	70 ns
M48Z32V-70MT6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V							18.1 mm	70 ns
M48Z35AY-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE				85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
M48Z35V-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	39.625 mm	100 ns
M48Z35AY-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z30-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
M48Z35-70MH1E	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.75 V						.003 Amp	18.1 mm	70 ns
M48Z12-150PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	150 ns
M48Z35AV-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M48Z59PC	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	1	R-PDIP-T28			9.65 mm	15.24 mm	Not Qualified	65536 bit		BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; SELF CONTAINED BATTERY				YES		39.625 mm
M48Z35AY-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE				70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
M48Z35AY-70PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.003 Amp	39.625 mm	70 ns
M48Z2M1V-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
M48Z12-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	2048 words	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K	0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1				Not Qualified	16384 bit			e3				.003 Amp		70 ns
M48Z512A-85CS1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z12-200PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z30Y-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
M48Z59Y-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.