STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8685916LA	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0						45 ns
M48Z35-70PC1	STMicroelectronics	SRAM STD	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			YES	.003 Amp	39.625 mm	70 ns
M48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
M48Z12-150PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
M48Z02-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z08-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
M48Z35AV-10PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M48Z35Y-70PC1	STMicroelectronics	SRAM STD	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			YES	.003 Amp	39.625 mm	70 ns
M48Z12-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
M48Z02-150PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z02-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z128Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	85 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		225	YES	.004 Amp	42.8 mm	70 ns
IMS1620P-70L	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0				.00025 Amp		70 ns
MK48Z09B10	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp		100 ns
M68AF127BM55NK1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	11.8 mm	55 ns
M68AW031AL70MS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28		3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V			30	260		.000006 Amp	18.11 mm	70 ns
IMS1600E-55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0				.014 Amp		55 ns
IMS1605S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T22		5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.002 Amp	27.94 mm	15 ns
MK48Z12B20	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.5 V	9.562 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION	e0			YES	.001 Amp		200 ns
5962-8670511XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel		QUAD		S-CQCC-N20		5.5 V			Not Qualified	16384 bit	4.5 V								25 ns
MK48H64N-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0005 Amp	36.83 mm	120 ns
IMS1605E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V			Not Qualified	65536 bit	4.5 V		e0			NO	.002 Amp		25 ns
IMS1420S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0						40 ns
M68AW512DL55ZB1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	512KX16	512K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.7 V		e1				.00003 Amp	10 mm	55 ns
M68AR024DN70ZH1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		1MX16	1M		0 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm	8 mm	Not Qualified	16777216 bit	1.65 V							10 mm	70 ns
M68AW511AM70NC6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.95 mm	70 ns
MK48S80N17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.25 V	4.57 mm	7.62 mm	Not Qualified	65536 bit	4.75 V	TOTEM-POLE MATCH OUTPUT	e0			YES	.16 Amp	34.67 mm	20 ns
MK6116S-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	16384 bit			e0				.001 Amp		200 ns
M624016-12E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	12 ns
M68AW256ML70ZH1E	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.000009 Amp	8 mm	70 ns
M68AF127BM70N6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	18.4 mm	70 ns
M68AR128ML55ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		128KX16	128K		0 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm	6 mm	Not Qualified	2097152 bit	1.65 V							8 mm	55 ns
M68AR024DN70ZH6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm	8 mm	Not Qualified	16777216 bit	1.65 V							10 mm	70 ns
M68AF127BM70NK1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	11.8 mm	70 ns
M624064-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.001 Amp	15.418 mm	20 ns
MK48256LN-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.00002 Amp		120 ns
M68AW256DL70ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	7 mm	70 ns
IMS1620AS-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T22					Not Qualified	65536 bit			e0				.014 Amp		35 ns
M68AW127BL10NK6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	11.8 mm	100 ns
M624256-20E1TR	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V					YES		17.935 mm	20 ns
IMS1601LE-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	15.418 mm	55 ns
5962-8601503XA	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	3.89 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.94 mm	45 ns
M629032-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V			Not Qualified	294912 bit	4.5 V		e0			YES	.001 Amp		20 ns
IMS1203S-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	35 ns
IMS1626S-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V					YES			20 ns
5962-8685915XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES		13.97 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.