STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK41H67P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0						35 ns
IMS1600W-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	e0			NO	.014 Amp	13.446 mm	30 ns
M68AF031AM70MS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V	e3				.000006 Amp	18.22 mm	70 ns
MK48Z13B25	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit						.001 Amp		250 ns
IMS1620W-55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N22				Not Qualified	65536 bit		e0				.014 Amp		55 ns
M68AW256D70ND6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e0				.00002 Amp	18.41 mm	70 ns
5962-8685915LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel			16KX4	16K		-55 Cel		DUAL		R-XDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						30.48 mm	45 ns
IMS1624E-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.014 Amp	15.418 mm	45 ns
M68AR512DL70ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	512KX16	512K	1 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	8 mm	Not Qualified	8388608 bit	1.65 V	e0				.000008 Amp	10 mm	70 ns
M68AF127BM55B6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						42.035 mm	55 ns
M54HC670F1	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel		3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T16	6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V	e0			NO			59 ns
M68AF127BL55N6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e0				.0000045 Amp	18.4 mm	55 ns
IMS1423E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.556 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0			NO		12.825 mm	25 ns
IMS1800N-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V	e0			NO	.01 Amp	13.97 mm	45 ns
MK48Z09B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	e0			YES	.003 Amp		150 ns
5962-8751304XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			NO		10.973 mm	25 ns
M68AF127BL55NK1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e0				.000015 Amp	11.8 mm	55 ns
IMS1400N-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V	e0			NO		10.795 mm	50 ns
M68AW256D70ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e0				.00002 Amp	18.41 mm	70 ns
IMS1600P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit		e0				.014 Amp		35 ns
M68AW031AM70NS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V	e0				.000006 Amp	11.8 mm	70 ns
MK48127N-70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V				YES		41.91 mm	70 ns
M68AW256MN55ZH6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e1				.000009 Amp	8 mm	55 ns
IMS1630LP-12	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.572 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.00007 Amp	36.83 mm	120 ns
M68AR512DL55ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			512KX16	512K		-40 Cel		BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	8 mm	Not Qualified	8388608 bit	1.65 V						10 mm	55 ns
M69AR048BL70ZB8F	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel		BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V						8 mm	70 ns
MK6116LS-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	16384 bit		e0				.000001 Amp		250 ns
5962-8552505XC	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		3-STATE	8KX8	8K		-55 Cel	GOLD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e4			YES		35.56 mm	55 ns
M68AR256MN55ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	10 mA	262144 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	4194304 bit	1.65 V	e0				.000003 Amp	7 mm	55 ns
M68AF031AL55B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3				.000006 Amp	37.085 mm	55 ns
M68AW031AL55N6U	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V	e0				.000006 Amp	11.8 mm	55 ns
MK48128N-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V				YES		41.91 mm	55 ns
MK41H67N-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0			NO		26.289 mm	25 ns
M68AW064FL70ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	2.7 V	e0				.000015 Amp	8 mm	70 ns
M68AF127BM70B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3				.0000045 Amp	42.035 mm	70 ns
IMS1624N-55M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		3-STATE	16KX4	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.019 Amp	13.97 mm	55 ns
IMS1223A-35M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel		3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0			NO	.005 Amp	10.973 mm	35 ns
M68AW031AL70MS6U	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V	e3				.000006 Amp	18.11 mm	70 ns
IMS1420W-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		MOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit		e0						40 ns
M68AW031AM55MS6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel		DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		30	260		.000006 Amp	18.11 mm	55 ns
M68AW511AM55NC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	e0				.000009 Amp	20.95 mm	55 ns
M68AF031AL70MS6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V	e3				.000006 Amp	18.22 mm	70 ns
M68AW512ML55ND6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	55 ns
MK48Z13B12	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit						.001 Amp		120 ns
5962-8685911XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	e0			YES		13.97 mm	70 ns
5962-8952402YA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V	e0					13.97 mm	55 ns
M68AW031AM70N6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel		DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
MK48Z18B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.003 Amp		150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.