Toshiba SRAM 2,089

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55257BSPL-85(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.1		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	34.9 mm	85 ns
TC518128ASPL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	80 ns
TC554161FTL-85	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	16	SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					YES	.00005 Amp	22.22 mm	85 ns
TC554001FI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.00014 Amp	20.6 mm	85 ns
TC74HC670AF-TP1EL	Toshiba	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words			5		4	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDSO-G16	6 V	1.9 mm		5.3 mm	Not Qualified	16 bit	2 V					NO		10.3 mm	49 ns
TC554001AFT-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	2.7 V		e0				.00005 Amp		100 ns
TC55V1001TRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	85 ns
TC55V4356FF-150	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	355 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5 V	e0				.003 Amp	20 mm	4.4 ns
TC554001FTI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	85 ns
TC55V8512JI-15(EL)	Toshiba	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		15 ns
TC55VZM216AJGI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE				1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V							28.58 mm	10 ns
TC55464AP-25	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words			5		4	IN-LINE				2.54 mm	70 Cel		64KX4	64K		0 Cel		DUAL		R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V							29.8 mm	25 ns
TC55WK837XB-333	Toshiba	CACHE SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words			2.5		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B153	2.625 V	2.26 mm		14 mm	Not Qualified	9437184 bit	2.375 V							22 mm	.4 ns
TC5508P-1	Toshiba	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1024 words			5	5	1	IN-LINE	DIP16,.3		SRAMs	2.54 mm	85 Cel	3-STATE	1KX1	1K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	1024 bit			e0						550 ns
TC55464AJ-15	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					15.88 mm	15 ns
TC518512AFT-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	YES	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2.7 V	0 Cel		DUAL	1	R-PDSO-G32	3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.00004 Amp	20.95 mm	80 ns
TC55V4376FF-83	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	131072 words		COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	FLOW-THROUGH ARCHITECTURE	e0				.003 Amp	20 mm	9 ns
TC55V1001ST-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V					YES		11.8 mm	85 ns
TC55257BSPL-10(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.1		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	34.9 mm	100 ns
TC55V1001SRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	85 ns
TC518512AF-10V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	YES	COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56		Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.00004 Amp	20.6 mm	100 ns
TC5517CPL-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		150 ns
TC55VBM316ASTN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	8	SRAMs	.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12.4 mm	55 ns
TC518129AFL-80LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0			YES		20.6 mm	80 ns
TC55WD1636FF-150	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	524288 words		COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.7 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0				.01 Amp	20 mm	3.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.