Toshiba SRAM 2,089

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TC518129AF-80

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

20.6 mm

80 ns

TC55V1165FF-8

Toshiba

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

16

FLATPACK, LOW PROFILE

.65 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.7 mm

14 mm

Not Qualified

1048576 bit

3.1 V

e0

YES

20 mm

8 ns

TC55416P-15H

Toshiba

CACHE SRAM

COMMERCIAL

22

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T22

5.5 V

4.45 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.001 Amp

27.2 mm

15 ns

TC518128CPL-10V

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

3

3/5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2.7 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T32

3.3 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

2.7 V

USER SELECTABLE 5V VCC

e0

YES

.000025 Amp

42 mm

100 ns

TC554161FTL-85L

Toshiba

STANDARD SRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

16

SRAMs

.8 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

1

R-PDSO-G54

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

YES

22.22 mm

85 ns

TC55V1001AF-10L

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

2.7 V

e0

20.6 mm

100 ns

TC518128APL-80

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

42 mm

80 ns

TC518128BFL-10V

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

20.6 mm

100 ns

TC51W3216XB-80

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

2.75

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

9 mm

80 ns

TC51W3216XB-85

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

2.75

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

9 mm

85 ns

TC551001CSRI-70

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

11.8 mm

70 ns

TC55VD1636FF-150

Toshiba

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

420 mA

524288 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX36

512K

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

3.465 V

1.7 mm

150 MHz

14 mm

Not Qualified

18874368 bit

3.135 V

e0

.01 Amp

20 mm

3.8 ns

TC55257CFTL-85L

Toshiba

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

.00001 Amp

11.8 mm

85 ns

TC518129BTRL-80L

Toshiba

PSEUDO STATIC RAM

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

128KX8

128K

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

18.4 mm

80 ns

TC55V8128BJ/BFT-8

Toshiba

TC51WKM616AXGN65

Toshiba

TC551001CPI-70

Toshiba

STANDARD SRAM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

70 ns

TMM2018D-55

Toshiba

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

55 ns

TC554001AFT-70

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

5.5 V

Not Qualified

4194304 bit

2.7 V

e0

.00005 Amp

70 ns

TMM2088P-45

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

2.54 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5 mm

7.62 mm

65536 bit

4.5 V

LG-MAX

e0

35 mm

45 ns

TC518128BTRL-80

Toshiba

PSEUDO STATIC RAM

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

128KX8

128K

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

18.4 mm

80 ns

TC51832PL-12

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

37 mm

120 ns

TC554001AF-70V

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

2.7 V

e0

.000025 Amp

20.6 mm

120 ns

TC55V8512J-20

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.004 Amp

23.5 mm

20 ns

TC551001ATRL-85(LT)

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

.00005 Amp

18.4 mm

85 ns

TC55V1001SR-10

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

100 ns

TC518129ASPL-10

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T32

5.5 V

4.45 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

40 mm

100 ns

TC55V1664BJ-15

Toshiba

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.002 Amp

15 ns

TC55257CFTI-10

Toshiba

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

.0001 Amp

11.8 mm

100 ns

THMS161620Z-35

Toshiba

CACHE SRAM MODULE

COMMERCIAL

40

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

16384 words

5

16

MICROELECTRONIC ASSEMBLY

70 Cel

16KX16

16K

0 Cel

TIN LEAD

UNSPECIFIED

X-XXMA-X40

5.5 V

Not Qualified

262144 bit

4.5 V

LOW POWER STANDBY MODE

e0

35 ns

TC514258Z-10

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

65 mA

262144 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

TC551001CF-70

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

YES

.00005 Amp

20.6 mm

70 ns

TC551001AFTI-85

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

.0001 Amp

18.4 mm

85 ns

TC55B4257J-15

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

5.5 V

3.6 mm

10.2 mm

Not Qualified

1048576 bit

4.5 V

e0

21 mm

15 ns

TC55V11601FT-15

Toshiba

CACHE SRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

16777216 words

SEPARATE

3.3

3.3

1

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

16MX1

16M

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1, (NON-MUXED)

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

e0

.004 Amp

22.22 mm

15 ns

TC511002P-10

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

TC55VBM316ATGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

260

18.4 mm

70 ns

TC554001AFT-85L

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.000025 Amp

20.95 mm

85 ns

TC55V4000ST-70

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX8

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

11.8 mm

85 ns

TC551001BSRL-85

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

YES

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00005 Amp

11.8 mm

85 ns

TC55NEM216AFTN70

Toshiba

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

DUAL

R-PDSO-G54

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000003 Amp

22.22 mm

70 ns

TC55V1001FT-10

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

18.4 mm

100 ns

TC518129CFWL-70

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0001 Amp

20.6 mm

70 ns

TMM2078D-45

Toshiba

STANDARD SRAM

COMMERCIAL

22

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

COMMON

5

5

4

IN-LINE

DIP22,.4

SRAMs

2.54 mm

70 Cel

3-STATE

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T22

Not Qualified

16384 bit

e0

45 ns

TC55VDM518AFFN15

Toshiba

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2097152 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

2MX18

2M

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3.465 V

1.7 mm

14 mm

Not Qualified

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e0

20 mm

3.8 ns

TC518128AF-12

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

20.6 mm

120 ns

TC55VEM216AGXN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6.5 mm

Not Qualified

4194304 bit

2.3 V

8 mm

55 ns

TC518128BFL-70

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

20.6 mm

70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.