Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
20.6 mm |
80 ns |
||||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
16 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.7 mm |
14 mm |
Not Qualified |
1048576 bit |
3.1 V |
e0 |
YES |
20 mm |
8 ns |
|||||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T22 |
5.5 V |
4.45 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.001 Amp |
27.2 mm |
15 ns |
||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
COMMON |
3 |
3/5 |
8 |
IN-LINE |
DIP32,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2.7 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T32 |
3.3 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.000025 Amp |
42 mm |
100 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
16 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
22.22 mm |
85 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
20.6 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
42 mm |
80 ns |
||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.6 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
2.75 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
2MX16 |
2M |
-25 Cel |
BOTTOM |
R-PBGA-B48 |
3.3 V |
1.2 mm |
6 mm |
Not Qualified |
33554432 bit |
2.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9 mm |
80 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
2.75 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
2MX16 |
2M |
-25 Cel |
BOTTOM |
R-PBGA-B48 |
3.3 V |
1.2 mm |
6 mm |
Not Qualified |
33554432 bit |
2.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
11.8 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
420 mA |
524288 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
3.465 V |
1.7 mm |
150 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
e0 |
.01 Amp |
20 mm |
3.8 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.00001 Amp |
11.8 mm |
85 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
128KX8 |
128K |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.4 mm |
80 ns |
|||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
42 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
e0 |
55 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.00005 Amp |
70 ns |
|||||||||||||||||||
Toshiba |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5 mm |
7.62 mm |
65536 bit |
4.5 V |
LG-MAX |
e0 |
35 mm |
45 ns |
|||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
128KX8 |
128K |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.4 mm |
80 ns |
|||||||||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
5.3 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
37 mm |
120 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000025 Amp |
20.6 mm |
120 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J36 |
3.6 V |
3.7 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.004 Amp |
23.5 mm |
20 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00005 Amp |
18.4 mm |
85 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
11.8 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.45 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
40 mm |
100 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.002 Amp |
15 ns |
||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
11.8 mm |
100 ns |
||||||||||||||||
Toshiba |
CACHE SRAM MODULE |
COMMERCIAL |
40 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
16KX16 |
16K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X40 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
LOW POWER STANDBY MODE |
e0 |
35 ns |
||||||||||||||||||||||||||||
Toshiba |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
65 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
YES |
.00005 Amp |
20.6 mm |
70 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
18.4 mm |
85 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
5.5 V |
3.6 mm |
10.2 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
21 mm |
15 ns |
||||||||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
16777216 words |
SEPARATE |
3.3 |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1, (NON-MUXED) |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e0 |
.004 Amp |
22.22 mm |
15 ns |
|||||||||||||||
Toshiba |
STATIC COLUMN DRAM |
COMMERCIAL |
18 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T18 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.3 V |
NOT SPECIFIED |
260 |
18.4 mm |
70 ns |
|||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.000025 Amp |
20.95 mm |
85 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
COMMON |
3 |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
4194304 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
11.8 mm |
85 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
70 Cel |
YES |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
11.8 mm |
85 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.000003 Amp |
22.22 mm |
70 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
18.4 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.0001 Amp |
20.6 mm |
70 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T22 |
Not Qualified |
16384 bit |
e0 |
45 ns |
|||||||||||||||||||||||||
Toshiba |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
2MX18 |
2M |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3.465 V |
1.7 mm |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 mm |
3.8 ns |
|||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
20.6 mm |
120 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6.5 mm |
Not Qualified |
4194304 bit |
2.3 V |
8 mm |
55 ns |
|||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.6 mm |
70 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.