Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55VL836FFI-75	Toshiba	STANDARD SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words			3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel			256KX36	256K		-40 Cel		QUAD		R-PQFP-G100	3.465 V	1.7 mm		14 mm	Not Qualified	9437184 bit	3.135 V							20 mm	10 ns
TC55V8200FT-10	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	430 mA	2097152 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	2MX8	2M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54	3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V		e0				.004 Amp	22.22 mm	10 ns
TC55V4376FF-100	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words		COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	FLOW-THROUGH ARCHITECTURE	e0				.003 Amp	20 mm	8.5 ns
TC5518CPL-20	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC551001BSRL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	11.8 mm	70 ns
TC55WD1636FF-167	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	440 mA	524288 words		COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.7 mm	167 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0				.01 Amp	20 mm	3.6 ns
THM91022L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				540 mA	1048576 words		COMMON	5	5	9		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	9437184 bit			e0				.009 Amp		100 ns
TC55V1001AF-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V		e0				.00001 Amp	20.6 mm	70 ns
THM81022L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				560 mA	1048576 words		COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	8388608 bit			e0				.008 Amp		85 ns
TC551001BSTL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	11.8 mm	70 ns
TC55257BPL-10L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	3/5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	37 mm	100 ns
TC55257DFTL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.00001 Amp	11.8 mm	150 ns
TC554001FTI-85V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.00007 Amp	20.95 mm	85 ns
TC55V040FT-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.7 V		e0				.000005 Amp	12.4 mm	100 ns
TC55VL1618FF-100	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	270 mA	1048576 words		COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.01 Amp	20 mm	8.5 ns
TC554001FL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.00003 Amp	20.6 mm	100 ns
TC518129BFTL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
TC55257BFL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0			YES		18.5 mm	100 ns
TMM2063P-10	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		COMMON			8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						100 ns
TC518128BFWL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	80 ns
TC55V1001AFT-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000015 Amp	18.4 mm	70 ns
TH6S1651A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68			UNSPECIFIED	UNSPECIFIED	NO	1	MOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		1048576 words			5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel		3-STATE	1MX8	1M		0 Cel		UNSPECIFIED	1	X-XXMA-X68	5.25 V				Not Qualified	8388608 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
TC55V400AFT-55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12.4 mm	55 ns
TMM2088P-35	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words		COMMON			8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						35 ns
TC55VL1636FF-75,-83,-100	Toshiba
TC55V8512J-15	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	15 ns
TC5518BPL-25	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC51WKM616BXGN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words		COMMON	2.75	1.8/2,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	11 mm	75 ns
TC554001AFT-70V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000025 Amp	20.95 mm	120 ns
TC51WHM616AXGN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words		COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.6 V		e1				.000005 Amp	11 mm	70 ns
TC551001AFTL-10(LT)	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.00005 Amp	18.4 mm	100 ns
TC551001APL-10L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	3/5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	42 mm	100 ns
TC518128AFTL-10LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0			YES		18.4 mm	100 ns
TC5562P-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP22,.3		SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.002 Amp	27.2 mm	35 ns
TC55VEM208ASTN40	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			11.8 mm	55 ns
TC55WDM536AFFN20	Toshiba	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words			2.5		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel			1MX36	1M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0					20 mm	3.2 ns
TC51832SP-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		34.9 mm	120 ns
TC55VZM208AJGN08	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	23.5 mm	8 ns
TC55257APL-12L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.2 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0				.00003 Amp		120 ns
TC551001BFTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V					YES		18.4 mm	85 ns
TC51V8512AFT-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	YES	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V					YES	.00004 Amp	20.95 mm	120 ns
TC55257DFTL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.00001 Amp	11.8 mm	120 ns
TC55257BTRI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.00003 Amp	11.8 mm	100 ns
TC5518CPL-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		150 ns
TC55257DPL-55L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	37 mm	55 ns
TC55V1864FT-15	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	131072 words		COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	18	SRAMs	.8 mm	70 Cel		3-STATE	128KX9	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	1179648 bit	3 V		e0			YES	.002 Amp	18.41 mm	15 ns
THM81002S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			480 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel		SINGLE		R-PSMA-N30		20.32 mm			Not Qualified	8388608 bit							.008 Amp		100 ns
TC55465P-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.9 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.