Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55B8128J-15	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0						15 ns
TC551001BPL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3.3	3/5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000015 Amp	42 mm	150 ns
TC55417J-20H	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.001 Amp	15.88 mm	20 ns
TC55328J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES		18.42 mm	35 ns
TC55257CSPI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	34.9 mm	100 ns
TC5564PL-10	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000001 Amp		100 ns
TC551001CSTI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					11.8 mm	70 ns
TC55V4316FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	133 MHz	14 mm	Not Qualified	4194304 bit	3.1 V	PIPELINED ARCHITECTURE	e0				.003 Amp	20 mm	5 ns
TC55B4257P-12	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel			256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		40 mm	12 ns
TC518129BPL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	70 ns
TC518129AF-80LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	80 ns
TC51832F-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		18.5 mm	100 ns
TC55VEM316AXBN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		8 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			11 mm	55 ns
TMM314AP-3	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0						300 ns
TC551001CSTI-70	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					11.8 mm	70 ns
TC558128AJ-12	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-J32	5.25 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V							20.96 mm	12 ns
TC55465J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	18.42 mm	25 ns
TC551001BFL-10V	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.000015 Amp	20.6 mm	150 ns
TC55257DFI-70L(EL)	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28	5.5 V	2.7 mm			Not Qualified	262144 bit	4.5 V							18.5 mm	70 ns
TC55V1864FT-12	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX18	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	1179648 bit	3 V		e0				.001 Amp	18.41 mm	12 ns
TC55YCM416BTGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel		DUAL		R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	16777216 bit	1.65 V							18.4 mm	85 ns
TC551001BTRL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
TC55329J-20	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.7 mm		7.7 mm	Not Qualified	294912 bit	4.5 V		e0			YES	.001 Amp	20.96 mm	20 ns
TC55BS8125J-12	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					23.5 mm	6 ns
TC551001BSTL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	11.8 mm	70 ns
TC518128ASP-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	120 ns
TC551001APL-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	100 ns
TC55464AJ-35	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel			64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					15.88 mm	35 ns
TC55WD836FF-133	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX36	256K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	9437184 bit	2.375 V		e0				.01 Amp	20 mm	4.2 ns
TC55V2161FT-85L	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			128KX16	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V		e0					18.41 mm	85 ns
TC55VD1636FFI-133	Toshiba	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX36	512K		-40 Cel		QUAD		R-PQFP-G100	3.465 V	1.7 mm		14 mm	Not Qualified	18874368 bit	3.135 V							20 mm	3.8 ns
TC51WKM616AXGN70	Toshiba
TC55V16100FTI-12	Toshiba	CACHE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V							22.22 mm	12 ns
TC554001AFTI-70V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000005 Amp	20.95 mm	70 ns
TC554001AFTR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	4.5 V		e0						100 ns
TC55V328J-20	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel			32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	3.6 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	3 V		e0					18.42 mm	20 ns
TC55B417J-12	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.01 Amp	15.88 mm	12 ns
TC55V2325FF-7	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX32	64K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	66 MHz	14 mm	Not Qualified	2097152 bit	3.1 V		e0				.002 Amp	20 mm	7 ns
TC5518BP-25	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.00003 Amp		250 ns
TC5501P-1	Toshiba		OTHER	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	85 Cel			256X4	256		-30 Cel	TIN LEAD	DUAL		R-PDIP-T22	5.5 V	4.5 mm		10.16 mm		1024 bit	4.5 V	SEATED HGT CALCULATED	e0					27.6 mm	650 ns
TC5514P	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				.00002 Amp		450 ns
TC518512TRL-10(LT)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K		-20 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	100 ns
TC5565PL-12L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000015 Amp		120 ns
TC554001ATR-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	4.5 V		e0				.00005 Amp		100 ns
TC55VL836FFI-83	Toshiba	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			256KX36	256K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.465 V	1.7 mm		14 mm	Not Qualified	9437184 bit	3.135 V		e0					20 mm	9 ns
TC5561P-55	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.00005 Amp	27.2 mm	55 ns
TC554001AF-85V	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	2.7 V		e0				.000025 Amp	20.6 mm	150 ns
TC55WL1636FF-83	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.7 mm	83 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0				.01 Amp	20 mm	9 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.