Toshiba SRAM 2,089

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC5588P-15	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0		.001 Amp	34.9 mm	15 ns
TC5565APL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.000015 Amp	37 mm	100 ns
TC55257CTRL-85	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0		.00005 Amp	11.8 mm	85 ns
TC55V2001ST-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0			11.8 mm	85 ns
TC518129BFWL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			20.6 mm	80 ns
TC55B464P-12	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			29.8 mm	12 ns
TMM314APL-3	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		COMMON	5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel		3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				300 ns
TC55257P-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit					.001 Amp		120 ns
TC55VZM208AFTI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		.01 Amp	18.41 mm	12 ns
TC55V1664J-15	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ44,.44	16	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel		DUAL	1	R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V			YES	.002 Amp	28.58 mm	15 ns
TC74HC670AP	Toshiba	STANDARD SRAM	INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words			4.5	2/6	4	IN-LINE	DIP16,.3		Other Memory ICs	2.54 mm	85 Cel		3-STATE	4X4	4		-40 Cel		DUAL		R-PDIP-T16	6 V	4.45 mm		7.62 mm	Not Qualified	16 bit	2 V	ADDRESS TO OUTPUT DELAY IS 245NS				19.25 mm
TC518129BFWL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			20.6 mm	80 ns
TC551001AFL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0	YES		20.6 mm	100 ns
TC55V16100FTI-15	Toshiba	CACHE SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V					22.22 mm	15 ns
TC518129CPL-80L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00005 Amp	42 mm	80 ns
THM8514L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				114 mA	524288 words		COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	4194304 bit			e0		.004 Amp		120 ns
TC554001ATRI-10V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V				.000005 Amp	20.95 mm	100 ns
TC518129BSPL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0			40 mm	80 ns
TC518512TRL-70LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			20.95 mm	70 ns
TC511632FTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	524288 bit	4.5 V		e0			18.41 mm	100 ns
TC551001API-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	85 Cel			128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	YES		42 mm	100 ns
TC551001BSTI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.0001 Amp	11.8 mm	85 ns
TC55V16186FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	380 mA	1048576 words		COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	4.2 ns
TC55V4316FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	167 MHz	14 mm	Not Qualified	4194304 bit	3.1 V	PIPELINED ARCHITECTURE	e0		.003 Amp	20 mm	4 ns
TC55VCM416BTGN55LB	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words		COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48					Not Qualified	16777216 bit							70 ns
TC55188T-20	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	8192 words		COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel		3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0	YES	.04 Amp	19.1262 mm	20 ns
TC55V400TR-10	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	4194304 bit	2.7 V		e0		.000005 Amp	12.4 mm	100 ns
TC518128ATRL-80LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3.135 V	CE/AUTO/SELF REFRESH	e0	YES		18.4 mm	80 ns
TC55V16100FT-12(M2	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	420 mA	1048576 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	3 V	0 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V				.004 Amp	22.22 mm	12 ns
TC55WDM518AFFN20	Toshiba	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words			2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel			2MX18	2M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0			20 mm	3.2 ns
TC5116402FT-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0		.001 Amp		80 ns
TC55B8128J-12	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	150 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				12 ns
TC518129AFL-12LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0	YES		20.6 mm	120 ns
TC551001BFTI-10V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V			YES		18.4 mm	200 ns
TC55V1001ASRI-70	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3.3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0		.000035 Amp	11.8 mm	70 ns
TC55VL818FF-84	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	83 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0		.01 Amp	20 mm	9 ns
TC5565APL-15L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.000015 Amp	37 mm	150 ns
TC518512AFT-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	YES	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	USER SELECTABLE 5V VCC	e0	YES	.00004 Amp	20.95 mm	70 ns
TC551001AFI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0		.0001 Amp	20.6 mm	85 ns
TC55WK818FF-267	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words			2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	9437184 bit	2.375 V	LATE WRITE				20 mm
TC554001FTL-10V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	VDD 3.3V TO 5.5V ; ACCESS TIME=150NS	e0	YES	.00003 Amp	20.95 mm	100 ns
TC55257DTRL-55V	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V	USER SELECTABLE 5V VCC	e0	YES	.00001 Amp	11.8 mm	120 ns
TC55257CFL-10	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0		.00005 Amp	18.5 mm	100 ns
TC55V8128BFTI-10	Toshiba	CACHE SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0		.002 Amp	13.34 mm	10 ns
TC55V2001TR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0			18.4 mm	100 ns
TC551001CTRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		7.9 mm	Not Qualified	1048576 bit	4.5 V		e0			18.4 mm	85 ns
TC518129AFW-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0	YES		20.6 mm	80 ns
TC55V2001ST-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0			11.8 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.