Toshiba SRAM 2,089

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55257CFI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	18.5 mm	100 ns
TC51832AP-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0					37 mm	85 ns
TMM2068D-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3		SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0						45 ns
TC55V16356FF-150	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	425 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.465 V	1.7 mm	150 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	20 mm	3.8 ns
TC518129CFWL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	100 ns
TMM2018AP-25	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24	5.5 V	5 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	LOW POWER STANDBY MODE	e0						25 ns
TC55V4326FFI-150	Toshiba	CACHE SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	365 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	128KX32	128K	3.1 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	150 MHz	14 mm	Not Qualified	4194304 bit	3.1 V	PIPELINED ARCHITECTURE	e0				.003 Amp	20 mm	4.4 ns
TC51864PL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				2.54 mm	70 Cel			64KX8	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	524288 bit	4.5 V		e0					42 mm	100 ns
TC518128BTRL-70L	Toshiba	PSEUDO STATIC RAM		32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				131072 words		5		8	SMALL OUTLINE, THIN PROFILE				.5 mm				128KX8	128K				DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
TC55V1001ASTI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				.00002 Amp	11.8 mm	70 ns
TC55B328J-15	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES		18.42 mm	15 ns
TC518129BPL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	70 ns
TC518129BPL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	80 ns
TC554161FTL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	16	SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	VDD 3.3V TO 5.5V ; ACCESS TIME=150NS				YES	.000035 Amp	22.22 mm	70 ns
TC55V1664BJI-10	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V						.002 Amp	28.58 mm	10 ns
TC518128CPL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	42 mm	70 ns
TC55V8512JI-12	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.5 mm	12 ns
TC55257DTRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.000015 Amp	11.8 mm	70 ns
TC51W6416XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Other Memory ICs	.8 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		6 mm	Not Qualified	67108864 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	9 mm	80 ns
TC55V2001FT-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	100 ns
TC55V8512JI-15	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.01 Amp	23.5 mm	15 ns
THM81002L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				560 mA	1048576 words	COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm			Not Qualified	8388608 bit			e0				.008 Amp		85 ns
TC554001FI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	85 ns
TC55258PL-12	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.2 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0				.00001 Amp		120 ns
TC551001BPL-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							42 mm	100 ns
TC5501D	Toshiba	STANDARD SRAM	OTHER	22	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words				4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	85 Cel		3-STATE	256X4	256		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0				.00001 Amp		450 ns
TH6S1625A0A	Toshiba	SRAM CARD		68			UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED				262144 words				16	MICROELECTRONIC ASSEMBLY								256KX16	256K				UNSPECIFIED		X-XXMA-X68					Not Qualified	4194304 bit									150 ns
TC5565AFL-10	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	65536 bit	4.5 V		e0			YES		18.5 mm	100 ns
TC551001CTR-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	18.4 mm	85 ns
TC55257BFL-85	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		18.5 mm	85 ns
TC55V2001ST-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					11.8 mm	85 ns
TC5561J-70	Toshiba	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.6 mm		7.7 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.00005 Amp	15.9 mm	70 ns
TC55V200UB-10	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3.6 V	.98 mm		6.29 mm	Not Qualified	2097152 bit	2.7 V		e0					8.68 mm	100 ns
TC551001CFT-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V					YES	.00005 Amp	18.4 mm	70 ns
TC554001ATRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.00005 Amp	20.95 mm	70 ns
TC55VZM208ATGI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	12 ns
TC55V16366FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	440 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	20 mm	3.6 ns
TC518129CFTL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	18.4 mm	70 ns
TC551001BSRL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	11.8 mm	85 ns
TC518129AFTL-80LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0			YES		18.4 mm	80 ns
TC55257DFTL-55L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V					YES	.00001 Amp	11.8 mm	55 ns
TC701001CSR-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE					70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	1048576 bit	4.5 V		e0						70 ns
TC518129BSPL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0					40 mm	100 ns
TC55257BSPL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					37 mm	70 ns
TC55B329J-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	294912 bit			e0						10 ns
TC55V200TR-85	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	2097152 bit	2.7 V		e0					12.4 mm	85 ns
TC55V2001TRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			256KX8	256K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	85 ns
TC55257CPI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.0001 Amp	37 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.