Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC5504P	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				.00002 Amp		450 ns
TC554001AFR-85V	Toshiba
TC55NEM208AFTV55	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V						.000003 Amp	20.95 mm	70 ns
TC55257BFLI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				.0001 Amp		100 ns
TC5565AFL-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00005 Amp	18.5 mm	120 ns
TC518512FL-80(LT)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			512KX8	512K		-20 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	80 ns
TC518128CFL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.6 mm	100 ns
TC55B465J-12	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.7 mm	7.7 mm	Not Qualified	262144 bit	4.5 V		e0					18.42 mm	12 ns
TC55NEM208ATGV70	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS		NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	20.95 mm	100 ns
TC55328AJ-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.7 mm	7.7 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	18.42 mm	25 ns
TC55V020FT-85	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40		3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.000005 Amp	12.4 mm	85 ns
TC55V1001ATR-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	100 ns
TC55V1001AFI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		3.6 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	2.7 V		e0				.00002 Amp	20.6 mm	70 ns
TC55B329P-12	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	4.45 mm	7.62 mm	Not Qualified	294912 bit	4.5 V		e0					40 mm	12 ns
TC55329AP-20	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	294912 bit			e0				.001 Amp		20 ns
TC55416P-25	Toshiba																															TIN LEAD												e0
TC55257BSPL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	34.9 mm	85 ns
TC551001BTRL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	100 ns
TC551001BFI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V					YES	.0001 Amp	20.6 mm	85 ns
TC55VCM416BTGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.3 V							18.4 mm	70 ns
THM41002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	25		512		PLASTIC/EPOXY	NO		CMOS				200 mA	1048576 words	SEPARATE	5	5	4		SIP25,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	4194304 bit			e0						120 ns
TC55257BSPL-85L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.1	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	34.9 mm	85 ns
TC51832ASP-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	85 ns
TC518128BFTL-80L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	80 ns
TC551001BFTI-85V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0			YES		18.4 mm	200 ns
TC701001CFT-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.5 V		e0						70 ns
TC55257CPI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.0001 Amp	37 mm	100 ns
TMM2114AP-15	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0						150 ns
TC5518CFL-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16384 bit			e0				.000001 Amp		150 ns
TC551001APL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	100 ns
TC55VZM208AJJN12	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	12 ns
TC5504ADL-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				.000001 Amp		200 ns
TC55VEM216AXBN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	7 mm	40 ns
TMM2068AD-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0						45 ns
TC55YK1618AYB-500	Toshiba	DDR SRAM	COMMERCIAL	153	BGA		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel			1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-CBGA-B153		1.89 V	2.75 mm	14 mm	Not Qualified	18874368 bit	1.71 V		e0					22 mm	.3 ns
TC5517CF-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16384 bit			e0				.00003 Amp		150 ns
TC518128CSPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.3	Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32		5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	40 mm	100 ns
TC55257CSPI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.0001 Amp	34.9 mm	100 ns
TC55V8128BFT-12	Toshiba	CACHE SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.002 Amp	13.34 mm	12 ns
TC5518BP	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC55188T-30	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel		3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	30 ns
TC55V2001TR-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	100 ns
TC551001AFTL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	85 ns
THM81022L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE					12.7 mm		Not Qualified	8388608 bit			e0				.008 Amp		100 ns
TC551001CST-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	11.8 mm	70 ns
TC55257BTRL-85L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	11.8 mm	85 ns
TC518129BFL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC518129BFTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.