Toshiba SRAM 2,089

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TC55V16186FF-167

Toshiba

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1048576 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

1MX18

1M

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3.465 V

1.7 mm

14 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e0

20 mm

3.6 ns

TC518128BTRL-10V

Toshiba

PSEUDO STATIC RAM

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

128KX8

128K

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

18.4 mm

100 ns

TC551001BFI-85L

Toshiba

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

YES

20.6 mm

85 ns

TC51W6417XB-85

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

4194304 words

COMMON

2.75

2.7/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Other Memory ICs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

67108864 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

9 mm

85 ns

TC55YK1636XB-400

Toshiba

STANDARD SRAM

COMMERCIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

850 mA

524288 words

COMMON

1.5,1.8

36

GRID ARRAY

BGA153,9X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

1.71 V

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B153

Not Qualified

18874368 bit

e0

.02 Amp

2.5 ns

TC55V1001SR-85

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

85 ns

TC55V328AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

3.6 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

3 V

e0

YES

18.42 mm

15 ns

TC55V2001SR-85

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.7 V

e0

11.8 mm

85 ns

TC518129AFW-12

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

20.6 mm

120 ns

TC5517AD-2

Toshiba

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

.00003 Amp

200 ns

TC551864AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

18

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX18

64K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J44

5.5 V

3.7 mm

10.16 mm

Not Qualified

1179648 bit

4.5 V

e0

YES

28.58 mm

15 ns

TMM2064P-15

Toshiba

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

8192 words

COMMON

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

150 ns

TC518129CPL-70L

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00005 Amp

42 mm

70 ns

TC51864FL-10

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

524288 bit

4.5 V

e0

20.6 mm

100 ns

TC554001ATR-85L

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP2-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.000025 Amp

20.95 mm

85 ns

TC5514ADL-2

Toshiba

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX4

1K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

.000001 Amp

200 ns

TC55257CFL-10L

Toshiba

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

262144 bit

4.5 V

e0

240

.00001 Amp

18.5 mm

100 ns

TC55V328AJ-17

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

3.6 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

3 V

e0

YES

18.42 mm

17 ns

TC55BS8125J-10

Toshiba

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

SYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

23.5 mm

5 ns

TC55V16366FFI-150

Toshiba

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

425 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

512KX36

512K

-40 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

3.465 V

1.7 mm

150 MHz

14 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e0

.01 Amp

20 mm

3.8 ns

TC5517BF-25

Toshiba

STANDARD SRAM

OTHER

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

2048 words

COMMON

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16384 bit

e0

.00003 Amp

250 ns

TC551001BSTI-10

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0001 Amp

11.8 mm

100 ns

TC55V200TR-70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

12.4 mm

70 ns

TC518512TRL-70(LT)

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP2-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

20.95 mm

70 ns

TC5518BP-20

Toshiba

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

16384 bit

e0

.00003 Amp

200 ns

TMM2018AP-45

Toshiba

CACHE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-PDIP-T24

5.5 V

5 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

LOW POWER STANDBY MODE

e0

45 ns

TC551001APL-70L(LV)

Toshiba

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

3/5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.000015 Amp

42 mm

70 ns

TC518512PL-10(LT)

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

2.54 mm

70 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

100 ns

TC55B4257J-12

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.6 mm

10.2 mm

Not Qualified

1048576 bit

4.5 V

e0

21 mm

12 ns

TC551001CP-55L

Toshiba

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00001 Amp

42 mm

55 ns

TC551632J-20

Toshiba

CACHE SRAM

COMMERCIAL

40

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

32768 words

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

SRAMs

1.27 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J40

5.5 V

3.7 mm

10.16 mm

Not Qualified

524288 bit

4.5 V

e0

.001 Amp

26.04 mm

20 ns

TC5504APL-3

Toshiba

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

4KX1

4K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

4096 bit

e0

.000001 Amp

300 ns

TC554101J-30

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

30 ns

TC518129APL-10LV

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V

e0

YES

42 mm

100 ns

TC55V1001FTI-10L

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

YES

.00002 Amp

18.4 mm

100 ns

TC554161AFTI-70,-85,-10-70L,-8

Toshiba

TC51WKM616AXBN75

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

COMMON

2.75

1.8/2,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

67108864 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

11 mm

75 ns

TC518128ATRL-80

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

18.4 mm

80 ns

TC55B328J-10

Toshiba

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

262144 bit

e0

10 ns

TC55B88P-12

Toshiba

CACHE SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

155 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.45 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

34.9 mm

12 ns

TC5116402J-70

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

TC55464AJ-25

Toshiba

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

15.88 mm

25 ns

TC51832AF-10

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

262144 bit

4.5 V

e0

18.5 mm

100 ns

TC518129AF-12

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

e0

YES

20.6 mm

120 ns

TC55V16256J-12(EL)

Toshiba

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

4194304 bit

e0

.004 Amp

12 ns

TMM2063P-15

Toshiba

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

8192 words

COMMON

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

150 ns

TC551001FL-10L

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

20.6 mm

100 ns

TC55B8128P-15

Toshiba

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.4

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

e0

15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.