Toshiba SRAM 2,089

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TC518128APL-12LV

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V

e0

YES

42 mm

120 ns

TC55VBM316AFTN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

55 ns

TC551001AFTL-70L(LT)

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

.000015 Amp

18.4 mm

70 ns

TC551001CFI-85L(EL)

Toshiba

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.00002 Amp

85 ns

TC5517AF-2

Toshiba

STANDARD SRAM

OTHER

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16384 bit

e0

.000001 Amp

200 ns

TC55257BFL-10L(LT)

Toshiba

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

-20 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

262144 bit

4.5 V

e0

.00002 Amp

18.5 mm

100 ns

TC518512AFT-80

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

Other Memory ICs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2.7 V

0 Cel

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

YES

.0001 Amp

20.95 mm

80 ns

TC5565P-15

Toshiba

TIN LEAD

e0

TC5518BD-20

Toshiba

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

.00003 Amp

200 ns

TC55VCM216ASGN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.3 V

12.4 mm

55 ns

TC551001PL-85L

Toshiba

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

42 mm

85 ns

TMM2063AP-12

Toshiba

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

8192 words

COMMON

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

120 ns

TC55V200FT-10

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

.000005 Amp

12.4 mm

100 ns

TC55VEM316BXGN45

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.3 V

7 mm

55 ns

TC55257BPL-85

Toshiba

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS

e0

YES

37 mm

85 ns

TC74HC670AF

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

2

2/6

4

SMALL OUTLINE

SOP16,.3

Other Memory ICs

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

ADDRESS TO OUTPUT DELAY IS 245NS

e0

10.3 mm

TC518129ATRL-12LV

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3.135 V

CE/AUTO/SELF REFRESH

e0

YES

18.4 mm

120 ns

TC55VZM208AJGN12

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

.004 Amp

23.5 mm

12 ns

TC55NEM208AFPV70

Toshiba

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

2.7 V

.000003 Amp

20.6 mm

85 ns

TC55VZM216AJGN08

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

110 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

.004 Amp

28.58 mm

8 ns

TC55465AJ-25

Toshiba

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

262144 bit

e0

.001 Amp

25 ns

TC554001AFT-80L

Toshiba

TC518129BFTL-10V

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

18.4 mm

100 ns

TC554161AFT-85L

Toshiba

STANDARD SRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

22.22 mm

85 ns

TC5116402FT-60

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

SRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

TC55V8128BJ-8

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

230 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

3.465 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

3.135 V

e0

.002 Amp

20.96 mm

8 ns

TC551001AFTL-70

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

18.4 mm

70 ns

TC5514AD

Toshiba

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX4

1K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

.00002 Amp

200 ns

TC55B4256J-15

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

18.42 mm

15 ns

TC551402J-20

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

SERIAL

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

5.5 V

3.6 mm

10.2 mm

Not Qualified

4194304 bit

4.5 V

e0

21 mm

20 ns

TC55V1001STI-85

Toshiba

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

85 ns

TC55258FL-12

Toshiba

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

Not Qualified

262144 bit

4.5 V

LOW POWER STANDBY MODE

e0

.00001 Amp

120 ns

TC55V8128BJI-10

Toshiba

CACHE SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

3.6 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.002 Amp

20.96 mm

10 ns

TC55257BFTL-85L(LT)

Toshiba

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

-20 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

.00002 Amp

11.8 mm

100 ns

TC55VL836FF-100

Toshiba

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

3.465 V

1.7 mm

100 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e0

.01 Amp

20 mm

7.5 ns

TC55B4256J-12

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

18.42 mm

12 ns

TC551001ATRL-70L

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

18.4 mm

70 ns

TC55257BPL-10(LT)

Toshiba

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

-20 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

.00005 Amp

37 mm

100 ns

TC518128CFL-10

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.5

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0001 Amp

20.6 mm

100 ns

TC5508P-4

Toshiba

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

1024 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX1

1K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

450 ns

TC551001AFTL-70L

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

18.4 mm

70 ns

TC55257BSPI-10L

Toshiba

STANDARD SRAM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

1

R-PDIP-T28

5.5 V

4.45 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00003 Amp

34.9 mm

100 ns

TC55257CFL-70

Toshiba

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

262144 bit

4.5 V

e0

.00005 Amp

18.5 mm

70 ns

TMM2068D-55

Toshiba

STANDARD SRAM

COMMERCIAL

20

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

COMMON

5

5

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T20

Not Qualified

16384 bit

e0

55 ns

TC5564AFL-20

Toshiba

STANDARD SRAM

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

8192 words

5

8

SMALL OUTLINE

1.27 mm

8KX8

8K

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

65536 bit

4.5 V

e0

18.5 mm

200 ns

TC551001AFTL-85L(LV)

Toshiba

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

.000015 Amp

18.4 mm

85 ns

TC55VDM536AFFN20

Toshiba

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1048576 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

1MX36

1M

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3.465 V

1.7 mm

14 mm

Not Qualified

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e0

20 mm

3.2 ns

TC518129AFL-10LV

Toshiba

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G32

5.5 V

2.8 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V

e0

YES

20.6 mm

100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.