Toshiba - TC554001AFT-80L

  1. Home
  2. Toshiba - TC554001AFT-80L
TC554001AFT-80L by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TC554001AFT-80L
Description SRAMs;
Datasheet TC554001AFT-80L Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

7005L20JGI8 by Integrated Device Technology

7005L20JGI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 68; Package Code: QCCJ; Package Shape: SQUARE; Memory Width: 8;
IDT7130LA25JGI8 by Renesas Electronics

IDT7130LA25JGI8

Renesas Electronics

The Renesas Electronics IDT7130LA25JGI8 is a 1Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.
N64S830HAS22I by Onsemi

N64S830HAS22I

Onsemi

N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.
DS1230Y-100 by Dallas Semiconductor

DS1230Y-100

Dallas Semiconductor

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
CY14V104NA-BA45XI by Infineon Technologies

CY14V104NA-BA45XI

Infineon Technologies

Infineon's CY14V104NA-BA45XI is a 256Kx16 SRAM with 3.3V nominal voltage, operating at -40 to 85°C. It features asynchronous mode, common I/O type, and 45ns access time. Ideal for industrial applications requiring non-volatile memory with parallel interface and output enable functionality.
CY14V104NA-BA45XIT by Infineon Technologies

CY14V104NA-BA45XIT

Infineon Technologies

Infineon's CY14V104NA-BA45XIT is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, 45ns access time, and 1.8/3.3V power supplies. Ideal for applications requiring fast and reliable non-volatile memory storage in compact electronic devices.
CAT24C44VI-TE13 by Catalyst Semiconductor

CAT24C44VI-TE13

Catalyst Semiconductor

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.75 mm;
IDT71256SA20YGI8 by Integrated Device Technology

IDT71256SA20YGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; JESD-609 Code: e3;
IDT71321LA20JG by Integrated Device Technology

IDT71321LA20JG

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: QCCJ; Package Shape: SQUARE; Maximum Access Time: 20 ns;
CY62147EV30LL-45ZSXI by Infineon Technologies

CY62147EV30LL-45ZSXI

Infineon Technologies

Infineon's CY62147EV30LL-45ZSXI is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and operates in industrial temperature range. It features common I/O type, 2.5/3.3V power supplies, and 44 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in harsh environments.
5962-8685923YA by Cypress Semiconductor

5962-8685923YA

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; Width: 7.62 mm;
CY62167G30-45BVXIT by Cypress Semiconductor

CY62167G30-45BVXIT

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;
71024S15YGI by Integrated Device Technology

71024S15YGI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: SOJ; Package Shape: RECTANGULAR; Width: 10.16 mm;
71V124SA10PHGI8 by Integrated Device Technology

71V124SA10PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;
APS6404L-3SQR-ZR by Ap Memory Technology

APS6404L-3SQR-ZR

Ap Memory Technology

APS6404L-3SQR-ZR by Ap Memory Technology is a 8MX8 SRAM with 67108864 bit memory density. It operates synchronously at up to 133 MHz with a supply voltage range of 2.7V to 3.6V. Ideal for applications requiring fast and reliable memory access in compact electronic devices.
23LC1024T-I/ST by Microchip Technology

23LC1024T-I/ST

Microchip Technology

23LC1024T-I/ST by Microchip Technology is a 128KX8 SRAM with 131072 words, operating at 20 MHz. It has a supply voltage range of 2.5V to 5.5V and operates in industrial temperatures from -40°C to 85°C. Ideal for applications requiring fast synchronous memory access in compact designs.
CY7C028-15AXI by Cypress Semiconductor

CY7C028-15AXI

Cypress Semiconductor

CY7C028-15AXI by Cypress Semiconductor is a 64Kx16 SRAM with 3-STATE output. Operating at 5V, it offers a max access time of 15ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial settings.
DS1220Y-200+ by Maxim Integrated

DS1220Y-200+

Maxim Integrated

DS1220Y-200+ by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a memory density of 16384 bit and max access time of 200ns. Ideal for commercial applications requiring non-volatile memory storage.
5962-8861012ZA by Renesas Electronics

5962-8861012ZA

Renesas Electronics

Renesas Electronics' 5962-8861012ZA is a 2Kx16 MULTI-PORT SRAM with 55ns access time, operating at -55 to 125 °C. It features a 68-pin GRID ARRAY package and supports an output enable function. Ideal for military-grade applications requiring fast and reliable memory storage.
APS6404L-3SQRX-SN by Ap Memory Technology

APS6404L-3SQRX-SN

Ap Memory Technology

APS6404L-3SQRX-SN by Ap Memory Technology is an 8MX8 SRAM with synchronous operation, 133 MHz clock frequency, and 67108864 bit memory density. It is ideal for applications requiring high-speed data processing in a compact form factor. The package features a small outline design with gull wing terminals for easy surface mounting.