Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC554001FTI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	100 ns
TC55465AP-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	34.9 mm	20 ns
TC551001BPI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	100 ns
TH6P1651A0	Toshiba	PSEUDO STATIC RAM		68			UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED				524288 words					16	MICROELECTRONIC ASSEMBLY							512KX16	512K				UNSPECIFIED		X-XXMA-X68					Not Qualified	8388608 bit									150 ns
TC51832PL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		37 mm	100 ns
TC55V16356FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	20 mm	4.2 ns
TC518128CFTL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	18.4 mm	80 ns
TC55B4257J-20	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel			256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	1048576 bit	4.5 V		e0					21 mm	20 ns
TC551001APL-10L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	42 mm	100 ns
TC554001AFTI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	20.95 mm	100 ns
TC518129ASP-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	100 ns
TC551001BTRL-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	85 ns
TC518512PI-10	Toshiba	PSEUDO STATIC RAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	85 Cel			512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0					42 mm	100 ns
TC55V1001ATRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		7.9 mm	Not Qualified	1048576 bit	2.7 V		e0				.00002 Amp	18.4 mm	70 ns
TC55V8512FT-12(EL)	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	4194304 bit			e0				.004 Amp		12 ns
TC55V400XB-85	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words			3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48	3.6 V	1 mm		9 mm	Not Qualified	4194304 bit	2.7 V							12 mm	85 ns
TC518512FL-70(DR)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	70 ns
TC518128CPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	70 ns
TC55V8512FTI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.01 Amp	18.41 mm	12 ns
TMM2063AP-10	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		COMMON			8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						100 ns
TC5504APL-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				.000001 Amp		200 ns
TC554001AFTR-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE				70 Cel			512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	2.7 V		e0						70 ns
TC518512PL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	100 ns
TC554001FL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V					YES	.00003 Amp	20.6 mm	70 ns
TC55B4257P-15	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel			256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		40 mm	15 ns
TC55257DTRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.000015 Amp	11.8 mm	85 ns
TC551001BFTL-10V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000015 Amp	18.4 mm	150 ns
TC511002J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0				.001 Amp		85 ns
TC554001FTL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					YES	.00005 Amp	20.95 mm	70 ns
TC55V1001ASR-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	85 ns
TC55V040ATR-55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words		COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.3 V		e0					12.4 mm	55 ns
TC518512AFT-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2.7 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					YES	.0001 Amp	20.95 mm	70 ns
TC5561J-55	Toshiba	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.6 mm		7.7 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.00005 Amp	15.9 mm	55 ns
TC55V1001ASTI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	100 ns
TMM2064P-10	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		COMMON			8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						100 ns
TC51832SPL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		34.9 mm	85 ns
TC514402AFT-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			85 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0				.001 Amp		80 ns
TC55V4366FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	PIPELINED ARCHITECTURE	e0				.002 Amp	20 mm	4 ns
TC55V200FT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words		COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	2097152 bit	2.7 V		e0					12.4 mm	70 ns
TC5565PL-15L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000015 Amp		150 ns
TC5514AP	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				.00002 Amp		200 ns
TC55256FL-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm			Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0				.00001 Amp		100 ns
TC55VCM416BTGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words		COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48					Not Qualified	16777216 bit									55 ns
TC55257DFTI-70V	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V					YES		11.8 mm	120 ns
TC55328P-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.9 mm	20 ns
TC5518BPL	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC551001AFTL-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	85 ns
TC55NEM208ATGV55	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS					.000003 Amp	20.95 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.