Toshiba SRAM 2,089

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55B465J-15	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES		18.42 mm	15 ns
TC551001AFTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000035 Amp	18.4 mm	85 ns
TC701001CFT-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE					70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0						70 ns
TC55YD1837YB-333	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel		3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0					22 mm	1.6 ns
TC55VD818FFI-133	Toshiba	ZBT SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	380 mA	524288 words		COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0				.01 Amp	20 mm	4.2 ns
TC55V1001ATRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	85 ns
TC55V1664FT-10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	65536 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.001 Amp	18.41 mm	10 ns
TC551001CTR-55	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	18.4 mm	55 ns
TC5116402Z-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1		SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0				.001 Amp		80 ns
TC55VCM216ASGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Silver (Sn/Ag)	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	4194304 bit	2.3 V		e2	40	260			12.4 mm	70 ns
TC51WHM516AXBN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words		COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm		6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	65 ns
TC55VZM216AJJN10	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	262144 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	28.58 mm	10 ns
TC551001AFI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	85 ns
TC51V8512ATR-15	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0					20.95 mm	150 ns
TC5517AP-2	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC55257BFL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.8 mm		8.8 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					18.5 mm	70 ns
TC55YD1819YB-333	Toshiba	STANDARD SRAM	COMMERCIAL	209	BGA		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-B209		1.95 V	2.65 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V		e0					22 mm	1.6 ns
TC55V1001AST-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				.00001 Amp	11.8 mm	70 ns
TC55VZM216AFTI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.41 mm	8 ns
TC701001CP-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE					70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0						70 ns
TC518512FL-10(LT)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			512KX8	512K		-20 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	100 ns
TC55V2001SR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					11.8 mm	100 ns
TC5564P-10	Toshiba	STANDARD SRAM	OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0				.00002 Amp		100 ns
TC55VEM208ASTN55	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			11.8 mm	70 ns
TC551001BFL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3.3	3/5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000015 Amp	20.6 mm	150 ns
TC518128AF-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		20.6 mm	100 ns
TC55YEM416BXGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words		COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		8 mm	Not Qualified	16777216 bit	1.65 V							11 mm	85 ns
THM81002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			400 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel		SINGLE		R-PSMA-N30			20.32 mm			Not Qualified	8388608 bit							.008 Amp		120 ns
TC55258FL-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.7 mm			Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0				.00001 Amp		100 ns
TC5517AD	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0				.00003 Amp		250 ns
TC554001AF-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		5.5 V				Not Qualified	4194304 bit	2.7 V		e0				.00005 Amp		100 ns
TC5517CP-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0				.00003 Amp		150 ns
TC5517BDL-20	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC554001AF-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				.000025 Amp	20.6 mm	100 ns
TC554161FTL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words		COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	16	SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G54		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	VDD 3.3V TO 5.5V ; ACCESS TIME=150NS				YES	.000035 Amp	22.22 mm	85 ns
TC55VZM208ATGI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	10 ns
TC55VZM208AJGI10	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE				1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V							23.5 mm	10 ns
TC551001CPI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	70 ns
TC55VCM208ASGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.3 V							12.4 mm	70 ns
TC551001ATRL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	70 ns
TC55187T-25	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words		COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel		3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	25 ns
TC55WDM518AFFN22	Toshiba	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words			2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel			2MX18	2M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.7 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0					20 mm	2.8 ns
TC55NEM208AFPV55	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	2.7 V						.000003 Amp	20.6 mm	70 ns
TC55257CFTL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.00001 Amp	11.8 mm	70 ns
TC55NEM216ASGV70	Toshiba	STANDARD SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	5	3/5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS					.000003 Amp	18.41 mm	100 ns
TC55V2001FT-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	85 ns
TC55NEM216AFTN55	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G54		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	22.22 mm	55 ns
TC55V4356FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.7 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5 V	e0				.003 Amp	20 mm	4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.