Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55257BTRL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	11.8 mm	100 ns
TC55257DFTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		7.9 mm	Not Qualified	262144 bit	4.5 V					YES	.000015 Amp	11.8 mm	80 ns
TC518129BTRL-80V	Toshiba	PSEUDO STATIC RAM		32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm				128KX8	128K				DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V							18.4 mm	80 ns
TC554001ATR-85V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000025 Amp	20.95 mm	150 ns
TC55329P-17	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	9	IN-LINE	DIP32,.3		SRAMs	2.54 mm	70 Cel		3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.25 V	4.45 mm		7.62 mm	Not Qualified	294912 bit	4.75 V		e0			YES	.001 Amp	40 mm	17 ns
TC55V1664BJI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.002 Amp	28.58 mm	12 ns
TC55YCM416BSGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words		COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel		DUAL		R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	16777216 bit	1.65 V							12.4 mm	85 ns
THM81022L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				400 mA	1048576 words		COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	8388608 bit			e0				.008 Amp		120 ns
TC55VZM208AJJN08	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	8 ns
TC554001AFI-10V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				.000005 Amp	20.6 mm	100 ns
TC518129BSPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0					40 mm	100 ns
TC55VZM216AJJN08	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	262144 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	28.58 mm	8 ns
TC55V1001AF-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V		e0				.000015 Amp	20.6 mm	70 ns
TC551664BJI-15	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44	5.25 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V		e0				.001 Amp	28.58 mm	15 ns
TC55WL1618FF-83	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words			2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel			1MX18	1M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e0					20 mm	9 ns
TC518128AP-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	120 ns
TC518129CFTL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	18.4 mm	70 ns
TC551001CFT-55	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	18.4 mm	55 ns
TC55V1001AST-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000015 Amp	11.8 mm	70 ns
TC55257CFTL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.00001 Amp	11.8 mm	100 ns
TC51832ASP-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE				2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	70 ns
TC55B465P-15	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES		34.9 mm	15 ns
TC55V8512FT-12	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	18.41 mm	12 ns
TC55VD836FFI-133	Toshiba	ZBT SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	262144 words		COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0				.01 Amp	20 mm	4.2 ns
TMM2078D-55	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		COMMON	5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0						55 ns
TMM2078AD-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		COMMON	5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0						35 ns
TC55257BFI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00003 Amp	18.5 mm	100 ns
TC55V1001AST-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	100 ns
TC551001BFTL-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	85 ns
TC551001PL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					42 mm	70 ns
TC551001AFTL-10L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	18.4 mm	100 ns
TC518128BFL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	80 ns
TC5564AFL-15	Toshiba	STANDARD SRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING				8192 words			5		8	SMALL OUTLINE				1.27 mm				8KX8	8K			TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	65536 bit	4.5 V		e0					18.5 mm	150 ns
TC518512AF-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2.7 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V					YES	.0001 Amp	20.6 mm	100 ns
TC55257AFL-85	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.5 mm			Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0				.0001 Amp		85 ns
TC55257DFTL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V					YES	.00001 Amp	11.8 mm	70 ns
TC55V16100FT-12(Y)	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	420 mA	1048576 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	3 V	0 Cel		DUAL		R-PDSO-G54					Not Qualified	16777216 bit							.004 Amp		12 ns
TC55257CSPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.00001 Amp	34.9 mm	70 ns
TC55V1664J-12	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ44,.44	16	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J44	3.465 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3.135 V		e0			YES	.002 Amp	28.58 mm	12 ns
TC514402AFT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			120 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0				.001 Amp		60 ns
TC55VEM316BXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words		COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	8388608 bit	2.3 V							7 mm	70 ns
TC55VD1618FF-133	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	1048576 words		COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.01 Amp	20 mm	4.2 ns
TC55V8512FT-15	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	18.41 mm	15 ns
TC554001AF-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	2.7 V		e0				.00005 Amp		70 ns
TC551001ATRI-70	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0				.0001 Amp		70 ns
TC55V1165FF-12	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words			3.3		16	FLATPACK, LOW PROFILE				.65 mm	70 Cel		3-STATE	64KX16	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.7 mm		14 mm	Not Qualified	1048576 bit	3.1 V		e0			YES		20 mm	12 ns
TC55V020TR-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.000005 Amp	12.4 mm	100 ns
TC55V2377AFF-225	Toshiba	CACHE SRAM	OTHER	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words			3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel			64KX36	64K		0 Cel		QUAD		R-PQFP-G100	3.5 V	1.7 mm		14 mm	Not Qualified	2359296 bit	3.1 V							20 mm	4.34 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.