Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC551001CSRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					11.8 mm	85 ns
TC55V2161FT-10L	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			128KX16	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V		e0					18.41 mm	100 ns
TC55V1001FI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V		e0					20.6 mm	100 ns
TC55257BFL-10EL	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28	5.5 V				Not Qualified	262144 bit	4.5 V								100 ns
TC551001AFL-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	100 ns
TC55B8128P-20	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0						20 ns
TC55417J-35	Toshiba	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0				.001 Amp		35 ns
TC518129CPL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3	3/5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	70 ns
TC55B328P-10	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	10 ns
TC55V1001ATRI-70	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		7.9 mm	Not Qualified	1048576 bit	2.7 V		e0				.000035 Amp	18.4 mm	70 ns
TC55V16256FTI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.01 Amp	18.41 mm	12 ns
TC551001BPI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	85 ns
TC55257BTRL-85(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	11.8 mm	85 ns
TC55V1664BJ-8	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44	3.465 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3.135 V		e0				.002 Amp	28.58 mm	8 ns
TC55V1001TRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0			YES	.00002 Amp	18.4 mm	85 ns
TC55B329J-12	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	294912 bit			e0						12 ns
TC55257CPL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	37 mm	70 ns
TC55328J-17	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.25 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.75 V		e0			YES	.001 Amp	18.42 mm	17 ns
TC551664BFT-15	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.001 Amp	18.41 mm	15 ns
TC5589J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel			8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	73728 bit	4.5 V		e0					18.42 mm	35 ns
TC5518CP-15	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.00003 Amp		150 ns
TC51WHM516AXGN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		6 mm	Not Qualified	33554432 bit	2.6 V							9 mm	65 ns
TC55257CFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0					18.5 mm	70 ns
TC55B328J-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0						12 ns
TC51832P-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		37 mm	85 ns
TC55V4196FF-83	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.1 V		e0				.002 Amp	20 mm	9 ns
TC518129ASPL-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	120 ns
TC55V1001ASR-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				.00001 Amp	11.8 mm	70 ns
TC55VZM216AFTI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.41 mm	12 ns
TC55257CPI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	37 mm	85 ns
TC55W400XB5	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		6.5 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	8 mm	70 ns
TC518128CFL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	20.6 mm	70 ns
TC55257DFTRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28	5.5 V				Not Qualified	262144 bit	4.5 V								70 ns
TC55VZM216ATGN08	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	18.41 mm	8 ns
TC5516ADL	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC51WKM716AXBN75	Toshiba	PSEUDO STATIC RAM	OTHER	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	8388608 words	COMMON	2.75	1.8,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		3-STATE	8MX16	8M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B69	3.3 V	1.4 mm		9 mm	Not Qualified	134217728 bit	2.6 V		e0				.000003 Amp	12 mm	75 ns
TC551001AFL-70L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	20.6 mm	70 ns
TC55257BPL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					37 mm	70 ns
TC551001BPI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V					YES		42 mm	100 ns
TC55NEM216ASTV70	Toshiba	STANDARD SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	3/5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V						.000003 Amp	18.41 mm	85 ns
TC554161AFT-85	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel		DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			22.22 mm	85 ns
TC5516AF-2	Toshiba	STANDARD SRAM	OTHER	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC514402ATR-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			75 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0				.001 Amp		100 ns
TC5588J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	18.42 mm	25 ns
TC55B464J-12	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					15.88 mm	12 ns
TC701001CTR-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	1048576 bit	4.5 V		e0						70 ns
TC55465AP-35	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	34.9 mm	35 ns
TC551001BPL-10V	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3.3	3/5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000015 Amp	42 mm	150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.