Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
.000003 Amp |
20.95 mm |
85 ns |
||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
2.7 V |
USER SELECTABLE 5V VCC |
YES |
.00001 Amp |
18.5 mm |
150 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
32768 words |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
294912 bit |
e0 |
.001 Amp |
25 ns |
||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
5.3 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
YES |
.000015 Amp |
37 mm |
80 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.000015 Amp |
20.6 mm |
150 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128KX8 |
128K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
42 mm |
100 ns |
|||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
128KX8 |
128K |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
18.4 mm |
100 ns |
|||||||||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
2.75 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
2MX16 |
2M |
-25 Cel |
BOTTOM |
R-PBGA-B48 |
3.1 V |
1.2 mm |
6 mm |
Not Qualified |
33554432 bit |
2.6 V |
9 mm |
65 ns |
||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
18.4 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STATIC COLUMN DRAM |
COMMERCIAL |
30 |
512 |
PLASTIC/EPOXY |
NO |
CMOS |
540 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
SIP30,.2 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
SINGLE |
22.86 mm |
Not Qualified |
9437184 bit |
e0 |
.009 Amp |
100 ns |
||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
135 mA |
8192 words |
COMMON |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
55 ns |
||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
3.465 V |
1.7 mm |
77 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e0 |
.01 Amp |
20 mm |
10 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.2 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
LOW POWER STANDBY MODE |
e0 |
.00001 Amp |
100 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
45 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
.001 Amp |
150 ns |
|||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
20.6 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
380 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e0 |
.004 Amp |
22.22 mm |
15 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J44 |
5.5 V |
3.7 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
28.58 mm |
20 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T24 |
5.5 V |
5 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
.000001 Amp |
250 ns |
|||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.7 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
.002 Amp |
20.96 mm |
12 ns |
||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
11.8 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
85 ns |
||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
40 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
524288 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP40,.56,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
3.6 V |
1.2 mm |
10 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000005 Amp |
12.4 mm |
70 ns |
|||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
65536 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T24 |
5.5 V |
4.45 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
NO |
.001 Amp |
29.8 mm |
35 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
16 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.00005 Amp |
22.22 mm |
70 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
11.8 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
18.4 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.6 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.55,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000005 Amp |
12.4 mm |
70 ns |
|||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
18.4 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.4 mm |
85 ns |
||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
1048576 words |
CONFIGURABLE |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
4194304 bit |
e0 |
.01 Amp |
20 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
70 ns |
||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
3/5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.3 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.00002 Amp |
37 mm |
85 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
20.95 mm |
80 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
70 Cel |
YES |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
.000015 Amp |
11.8 mm |
70 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00005 Amp |
20.6 mm |
100 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
18.4 mm |
120 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
55 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
.98 mm |
6.29 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
8.68 mm |
70 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.00003 Amp |
250 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
5.3 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
YES |
.00001 Amp |
37 mm |
85 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.00002 Amp |
11.8 mm |
100 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
153 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
850 mA |
524288 words |
COMMON |
1.5,1.8 |
36 |
GRID ARRAY |
BGA153,9X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
1.71 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B153 |
Not Qualified |
18874368 bit |
e0 |
.02 Amp |
2.3 ns |
|||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
e0 |
.00003 Amp |
250 ns |
||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
COMMON |
9 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
73728 bit |
e0 |
45 ns |
|||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000025 Amp |
20.95 mm |
150 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
42 mm |
85 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
2.75 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
4MX16 |
4M |
-25 Cel |
BOTTOM |
R-PBGA-B48 |
3.3 V |
1.2 mm |
8 mm |
Not Qualified |
67108864 bit |
2.6 V |
NOT SPECIFIED |
NOT SPECIFIED |
11 mm |
65 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.