Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC554001ATR-70V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000025 Amp	20.95 mm	120 ns
TC5116402J-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0				.001 Amp		60 ns
TC51832FL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		18.5 mm	100 ns
TC554001ATR-10V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000025 Amp	20.95 mm	150 ns
TC5561P-70	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.00005 Amp	27.2 mm	70 ns
TC551001API-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				.000035 Amp	42 mm	85 ns
TC55VZM216ATGN10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	18.41 mm	10 ns
TC551001BFTL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.000015 Amp	18.4 mm	150 ns
TC518129CPL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	100 ns
TC55V1001AFT-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	85 ns
TC55465P-17	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.25 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.75 V		e0			YES	.001 Amp	34.9 mm	17 ns
TC55B465J-10	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					18.42 mm	10 ns
TC51WKM616AXGN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words		COMMON	2.75	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.6 V		e1				.000005 Amp	11 mm	75 ns
TC55V2001TRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			256KX8	256K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	85 ns
THM91002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			450 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		0 Cel		SINGLE		R-PSMA-N30		20.32 mm			Not Qualified	9437184 bit							.009 Amp		120 ns
TC5589P-15	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words			5		9	IN-LINE			2.54 mm	70 Cel			8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	73728 bit	4.5 V		e0					34.9 mm	15 ns
TC55V200UB-85	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3.6 V	.98 mm		6.29 mm	Not Qualified	2097152 bit	2.7 V		e0					8.68 mm	85 ns
TC55V8200FTI-15	Toshiba	CACHE SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			2MX8	2M		-40 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V							22.22 mm	15 ns
TC55VCM316BTGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words		COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	70 ns
TC5564PL	Toshiba	STANDARD SRAM	OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000001 Amp		100 ns
TC518128BFWL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC55V2161FT-10	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			128KX16	128K		0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V							18.41 mm	100 ns
TC55465AP-15	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	34.9 mm	15 ns
TC551001AFL-10L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	20.6 mm	100 ns
TC518128CFWL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	70 ns
TC5517CPL-20	Toshiba	STANDARD SRAM	INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC5565APL-15	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		37 mm	150 ns
TC55V2001TR-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V		e0					18.4 mm	85 ns
TC55VZM208AFTN10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	18.41 mm	10 ns
TC518128ASPL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	100 ns
TC55VL836FF-84	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	83 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0				.01 Amp	20 mm	9 ns
TC51832P-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		37 mm	100 ns
TC554001ATR-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	4194304 bit	4.5 V		e0				.00005 Amp		85 ns
TC55V1325FF-8	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words			3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		3-STATE	32KX32	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.7 mm		14 mm	Not Qualified	1048576 bit	3.1 V	SYNCHRONOUS SELF-TIMED WRITE	e0			YES		20 mm	8 ns
TC5517ADL-2	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC55V4366FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	PIPELINED ARCHITECTURE	e0				.002 Amp	20 mm	3.5 ns
TC55W800XB8	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	50 mA	524288 words		COMMON	2.7	2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		8 mm	Not Qualified	8388608 bit	2.3 V							11 mm	85 ns
TC55257BFTL-10(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	11.8 mm	100 ns
TC55465P-25	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.9 mm	25 ns
TC55328J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	18.42 mm	25 ns
TC554161AFTI-70	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			22.22 mm	70 ns
TC55V1001SR-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V					YES		11.8 mm	85 ns
TC74AC670F	Toshiba	STANDARD SRAM		16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				4 words					4	SMALL OUTLINE			1.27 mm				4X4	4			TIN LEAD	DUAL		R-PDSO-G16		1.9 mm		5.3 mm	Not Qualified	16 bit			e0					10.3 mm
TC55188T-25	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words		COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel		3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0			YES	.04 Amp	19.1262 mm	25 ns
TC55VL818FFI-75	Toshiba	STANDARD SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words			3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX18	512K		-40 Cel		QUAD		R-PQFP-G100	3.465 V	1.7 mm		14 mm	Not Qualified	9437184 bit	3.135 V							20 mm
TC55V1001ASR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	100 ns
TC551001BTRI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V					YES		18.4 mm	100 ns
TC55VZM208AFTI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.41 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.