Toshiba SRAM 2,089

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC551001CSTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					11.8 mm	85 ns
TC554001FTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	4194304 bit	4.5 V					YES	.00014 Amp	18.4 mm	85 ns
TC554161TRL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			256KX16	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					22.22 mm	85 ns
TC518129AP-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	100 ns
TC55V1403J-12	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1048576 words	CONFIGURABLE	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V	CAN ALSO BE CONFIGURED AS 1M X 4	e0				.01 Amp	20.96 mm	12 ns
TC554001ATRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.0001 Amp	20.95 mm	85 ns
TC55V4186FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.1 V		e0				.002 Amp	20 mm	5 ns
TC518128AFWL-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		20.6 mm	120 ns
TC55VZM216ATGI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	8 ns
TC518128CFL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5		Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	80 ns
TC55V328BFT-12	Toshiba	CACHE SRAM	COMMERCIAL	28	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3.1 V		e0			YES	.0003 Amp	11.8 mm	12 ns
TC55V1001ASRI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	100 ns
TC55V2161FT-85	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			128KX16	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V		e0					18.41 mm	85 ns
TC518512PL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	80 ns
TC5517ADL	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC55V1001AFTI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0			YES		18.4 mm	100 ns
TC55VZM208ATGN08	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	18.41 mm	8 ns
TC551001CSR-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	11.8 mm	85 ns
TC55VZM208AFTN08	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	18.41 mm	8 ns
TC55257CTRI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	11.8 mm	85 ns
TC5518CF-20	Toshiba	STANDARD SRAM	INDUSTRIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5		SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC55YEM316AXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	2	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V		e1	NOT SPECIFIED	250			11 mm	70 ns
TC558128AJ-20(EL)	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-J32	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	20 ns
TC5564APL-15	Toshiba	STANDARD SRAM		28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1		THROUGH-HOLE				8192 words		5		8	IN-LINE				2.54 mm				8KX8	8K			TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0					36.83 mm	150 ns
TC518129CPL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3/5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	80 ns
TC55V1664BJ-12	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V						.002 Amp	28.58 mm	12 ns
TC551001CTRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	70 ns
TC55V1001STI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V					YES	.00002 Amp	11.8 mm	100 ns
TC55YCM316BTGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	524288 words	COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		DUAL		R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	8388608 bit	1.65 V							18.4 mm	85 ns
TC5565PL	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.0001 Amp		100 ns
TC5565FL-15	Toshiba																																TIN LEAD												e0
TC55VZM216AJGN12	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	28.58 mm	12 ns
TC518129CPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	70 ns
TC514402AFT-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			100 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0				.001 Amp		70 ns
TC55V16376FF-83	Toshiba	STANDARD SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel			512KX36	512K		0 Cel		QUAD		R-PQFP-G100	3.465 V	1.7 mm		14 mm	Not Qualified	18874368 bit	3.135 V							20 mm	9 ns
TMM2018AP-35	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24	5.5 V	5 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	LOW POWER STANDBY MODE	e0						35 ns
TC55257CFI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0				.0001 Amp	18.5 mm	85 ns
TC558128AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL	1	R-PDSO-J32	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V					YES	.001 Amp	20.96 mm	20 ns
TC518129CPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	42 mm	100 ns
TC55257BPL-85(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	37 mm	85 ns
TMM2018AD-45	Toshiba	STANDARD SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0						45 ns
THM81002L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO		CMOS				480 mA	1048576 words	COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm			Not Qualified	8388608 bit			e0				.008 Amp		100 ns
TMM2089P-55	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			9	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel		3-STATE	8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	73728 bit			e0						55 ns
TC55V1001SR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V					YES		11.8 mm	100 ns
TC51WHM516AXBN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm		6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	70 ns
TC551001AFTL-85L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	18.4 mm	85 ns
TMM2068D-35	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3		SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0						35 ns
TC55257AF-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				.001 Amp		120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.