Toshiba SRAM 2,089

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC5517BPL	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC55YEM416AXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words		COMMON	2	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48	2.2 V	1.2 mm		8 mm	Not Qualified	16777216 bit	1.65 V							11 mm	70 ns
TC55257CFI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	18.5 mm	85 ns
TC518128CPL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	100 ns
TC55NEM216ATGV70	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS		NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	22.22 mm	100 ns
TC55417P-25H	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words		COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.001 Amp	29.8 mm	25 ns
TC518129BPL-80L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	80 ns
TC55464J-35	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.001 Amp	15.88 mm	35 ns
TC518129APL-12LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0			YES		42 mm	120 ns
TC55V1001FI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		3-STATE	128KX8	128K		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	2.7 V		e0			YES		20.6 mm	85 ns
TC55NEM216ATGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	22.22 mm	70 ns
TC554001AFI-85V	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				.000005 Amp	20.6 mm	85 ns
TC551632J-25	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	32768 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel		3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	524288 bit	4.5 V		e0				.001 Amp	26.04 mm	25 ns
TC55YCM316BSGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	524288 words		COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		DUAL		R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	8388608 bit	1.65 V							12.4 mm	70 ns
TC851001CST-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V				Not Qualified	1048576 bit	4.5 V		e0						85 ns
TC551001CFI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	85 ns
TC55V4400FT-12	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	380 mA	4194304 words		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	4MX4	4M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e0				.004 Amp	22.22 mm	12 ns
TC558128BJ-15	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.001 Amp	20.96 mm	15 ns
TC518128AFW-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		20.6 mm	80 ns
TC55257DTRL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V					YES	.00001 Amp	11.8 mm	85 ns
TC5564P	Toshiba	STANDARD SRAM	OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.00002 Amp		100 ns
TC554161AFT-70L	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					22.22 mm	70 ns
TC55V1165FF-10	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words			3.3		16	FLATPACK, LOW PROFILE			.65 mm	70 Cel		3-STATE	64KX16	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.7 mm		14 mm	Not Qualified	1048576 bit	3.1 V		e0			YES		20 mm	10 ns
TC55V2001F-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE			1.27 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	2097152 bit	2.7 V		e0					20.6 mm	85 ns
TC55257DFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	2.7 mm		8.8 mm	Not Qualified	262144 bit	4.5 V					YES	.00001 Amp	18.5 mm	70 ns
TC518512FTL-80LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	80 ns
TC518129BTRL-70	Toshiba	PSEUDO STATIC RAM		32	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm				128KX8	128K				DUAL		R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
THM8514S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			114 mA	524288 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel		SINGLE		R-PSMA-N30					Not Qualified	4194304 bit							.004 Amp		120 ns
TC55YCM316BTGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	524288 words		COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		DUAL		R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	8388608 bit	1.65 V							18.4 mm	70 ns
TMM2068AP-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	16384 bit			e0						45 ns
TC5517BDL	Toshiba	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC55V1001AFT-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	100 ns
TC554161AFT-85V	Toshiba	STANDARD SRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	262144 words		COMMON	5	3/5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0					22.22 mm	85 ns
TC55465AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	18.42 mm	20 ns
TC5116402FT-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0				.001 Amp		70 ns
TC55465P-35	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.9 mm	35 ns
TC55257BSPL-10L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	IN-LINE	DIP28,.1	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	34.9 mm	100 ns
TC518128BFL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC51V8512AF-15	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	YES	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	2.7 V		e0			YES	.00004 Amp	20.6 mm	150 ns
TC551001AFL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	85 ns
TC518512PL-10(DR)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0					42 mm	100 ns
TC55VD818FF-143	Toshiba	ZBT SRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words		COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	143 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	20 mm	4 ns
TC5588J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	8192 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	18.42 mm	35 ns
TC554001FL-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.00005 Amp	20.6 mm	100 ns
TC554161AFTI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G54	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			22.22 mm	85 ns
TC55V4376FFI-83	Toshiba	CACHE SRAM	INDUSTRIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words		COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	128KX36	128K	3.1 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	FLOW-THROUGH ARCHITECTURE	e0				.003 Amp	20 mm	9 ns
TC551001BPL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3.3	3/5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000015 Amp	42 mm	150 ns
TC551001FL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.85 mm		8.8 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					20.6 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.