SRAM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1225Y-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V	10.54 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225Y-200+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.005 Amp		200 ns
DS1245AB-120-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.25 V				Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245AB-120IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T32		5.25 V				Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245AB-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.25 V				Not Qualified	1048576 bit	4.75 V		e3				.0006 Amp		120 ns
HM628128BLFP-7	Hitachi	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.45 mm	70 ns
IDT71016S12PHGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IS61WV10248BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.4 V		e3	10	260		.025 Amp	18.415 mm	10 ns
IS61WV25616BLS-25TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.4 V		e3	10	260		.009 Amp	18.415 mm	25 ns
IS61WV25616BLS-25TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	4194304 bit							.009 Amp		25 ns
R1LV0408DSP-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	2	3.6 V	3.05 mm		11.4 mm		4194304 bit	2.7 V							20.75 mm	55 ns
RMLV0816BGSA-4S2#KA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.4 mm	45 ns
RMWV6416AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM		48		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	38 mA	4194304 words	COMMON	3		16					85 Cel		4MX16	4M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V					67108864 bit	2.7 V					YES	.003 Amp		55 ns
7007L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
71321SA35TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260		.015 Amp	10 mm	35 ns
71V424S10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
AS6C4008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B36	3	5.5 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	8 mm	55 ns
AS7C1024B-12TJIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.683 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V			40	245		.01 Amp	20.995 mm	12 ns
AS7C31025B-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32	3	3.6 V	3.7084 mm		10.16 mm		1048576 bit	3 V		e3/e6					20.955 mm	12 ns
CY62167EV18LL-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY7C1018DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.63 V	3.556 mm		7.5819 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.003 Amp	20.828 mm	10 ns
CY7C1021BN-15VXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.015 Amp	28.575 mm	15 ns
CY7C1061AV33-10ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260		.05 Amp	22.415 mm	10 ns
DS1245Y-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		120 ns
DS1245Y-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp		120 ns
IDT7130LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
IDT71V256SA15PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	11.8 mm	15 ns
K6R4016V1D-UI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e6		260		.005 Amp	18.41 mm	10 ns
R1RP0416DSB-2PR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE				70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44	3	5.5 V					4194304 bit	4.5 V								12 ns
23K256-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	262144 bit	2.7 V		e3			NO	.000004 Amp	9.271 mm
23K640-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.9 mm
48L640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm		65536 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
70V25L25PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	30	260		.005 Amp	14 mm	25 ns
71024S15TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
71321LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
71321LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
71V416S10PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
74F189SJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	2.108 mm		5.3085 mm		64 bit	4.5 V							10.11 mm	27 ns
CY14V101QS-BK108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
CY14V101QS-BK108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	105 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1		260			8 mm
CY62167EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY62168EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260		.00001 Amp	8 mm	45 ns
CY7C1049G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V							18.415 mm	10 ns
HM1-6561B/883	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	7.2 mA	256 words		5		4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T18		5.5 V	5.08 mm		7.62 mm	Not Qualified	1024 bit	4.5 V		e0				.00001 Amp		220 ns
HM628512BLFP-7	Renesas Electronics	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	-20 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	4194304 bit	4.5 V	LG-MAX					.00002 Amp	20.95 mm	70 ns
IDT70V261L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V				Not Qualified	262144 bit	3 V		e3	30	260		.003 Amp		25 ns
IDT71016S15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	15 ns
IDT71V016SA20PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	18.41 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.