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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
R1LV0408DSP-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	3.05 mm		11.4 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0003 Amp	20.75 mm	55 ns
R1LV1616RSA-7SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel		DUAL		R-PDSO-G48	2					Not Qualified	16777216 bit					260				70 ns
23K640T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
2612B	Signetics	STANDARD SRAM	COMMERCIAL	16		RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE					70 Cel		3-STATE	256X4	256		0 Cel		DUAL	1	R-PDIP-T16		5.25 V				Not Qualified	1024 bit	4.75 V					NO			400 ns
70261L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK					85 Cel			16KX16	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V					262144 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3		260				20 ns
70T3519S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.2 mm	133 MHz	15 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	15 mm	15 ns
70T3519S166BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	17 mm	12 ns
70V25L15PFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel		3-STATE	8KX16	8K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	30	260		.0025 Amp	14 mm	15 ns
70V27L15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel		3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	30	260		.003 Amp	14 mm	15 ns
70V27L15PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	FLATPACK					85 Cel			32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								15 ns
70V658S10BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	2359296 bit	3.15 V		e0	20	225		.015 Amp	15 mm	10 ns
70V659S12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	465 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225		.015 Amp	15 mm	12 ns
71016S20PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	20 ns
71024S12TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	12 ns
71024S12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	12 ns
71024S12TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	12 ns
71024S20TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	20 ns
71256SA15YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm		262144 bit	4.5 V		e3	40	260	YES	.015 Amp	17.9324 mm	15 ns
71256SA20YGI	Renesas Electronics	STANDARD SRAM																															Matte Tin (Sn) - annealed				3									e3	40	260
7130LA25PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	14 mm	25 ns
71321LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.004 Amp	19.1262 mm	25 ns
71321LA25TFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.004 Amp	10 mm	25 ns
71421LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
71V30L25TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	COMMON	3.3	3.3	8	FLATPACK	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel		3-STATE	1KX8	1K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-F64	3	3.6 V	1.6 mm		10 mm	Not Qualified	8192 bit	3 V		e3	30	260		.003 Amp	10 mm	25 ns
71V35761S200PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.1 ns
71V416S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3		260		.02 Amp	28.575 mm	12 ns
71V424L15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	15 ns
AP3983CMTR-G1	Diodes Incorporated	STANDARD SRAM																															MATTE TIN													e3		260
AS6C1616-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.7 V			40	260			18.4 mm	55 ns
AS6C62256-55SCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	3	5.5 V	3.048 mm		8.6 mm	Not Qualified	262144 bit	2.7 V		e3/e6				.00002 Amp	18.491 mm	55 ns
AS6C62256-55SCNTR	Alliance Memory	STANDARD SRAM																																			3
AS7C256A-10TCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3				.002 Amp	11.8 mm	10 ns
AS7C31026C-12BINTR	Alliance Memory	STANDARD SRAM																																			3
AS7C34096A-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	3 V		e3/e6					23.495 mm	12 ns
AS7C38096A-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	85 Cel			1MX8	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		8388608 bit	2.7 V							8 mm	10 ns
CY14B108L-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel			1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	45 ns
CY14V101QS-BK108XQT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel			128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
CY62128ELL-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e3	20	260		.000004 Amp	18.4 mm	45 ns
CY7C1021BNL-15ZSXAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit							.0005 Amp		15 ns
CY7C1021D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	43.815 mm	10 ns
CY7C1041D-10ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	10 ns
CY7C1041G30-10BVJXI	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	100 MHz	6 mm		4194304 bit	2.2 V		e1		260	YES	.008 Amp	8 mm	10 ns
CY7C1061G30-10BV1XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260			8 mm	10 ns
CY7C135-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	20	260		.015 Amp	19.1262 mm	25 ns
DS1245ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0		SRAMs		85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V				Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		70 ns
DS1245ABP-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0		SRAMs		85 Cel		3-STATE	128KX8	128K		-40 Cel		DUAL	1	R-XDMA-U34		5.25 V				Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION PERIOD				YES	.005 Amp		70 ns
DS1245ABP-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		C BEND	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0		SRAMs	1.27 mm	85 Cel			128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-C34		5.25 V	6.85 mm		23.495 mm	Not Qualified	1048576 bit	4.75 V		e3				.0006 Amp	25.019 mm	70 ns
DS1270W-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	2097152 words		3.3	3.3	8	IN-LINE	DIP36,.6		SRAMs	2.54 mm	85 Cel			2MX8	2M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T36						Not Qualified	16777216 bit			e0				.0002 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.