SRAM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1270W-100IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE				2.54 mm	85 Cel		2MX8	2M		-40 Cel	MATTE TIN	DUAL		R-PDIP-P36		3.6 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e3					53.213 mm	100 ns
DS1270W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	MICROELECTRONIC ASSEMBLY					85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-XDMA-P36		3.6 V			Not Qualified	16777216 bit	3 V		e0						100 ns
HM628128DLPI-7	Renesas Technology	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							41.9 mm	70 ns
IDT6116LA120TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	120 ns
IDT70T633S10BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	17 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	17 mm	10 ns
IDT70T633S10BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	17 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	17 mm	10 ns
IDT70T653MS12BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	790 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	17 mm	Not Qualified	18874368 bit	2.4 V		e1	30	260		.04 Amp	17 mm	12 ns
IDT70V631S12PRFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	515 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm	14 mm	Not Qualified	4718592 bit	3.15 V		e0	30	225		.015 Amp	20 mm	12 ns
IDT71016S15PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	18.41 mm	15 ns
IDT71016S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	15 ns
IDT71016S15YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.01 Amp	28.575 mm	15 ns
IDT71016S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	28.575 mm	15 ns
IDT71016S20PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	20 ns
IDT71024S12TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	12 ns
IDT71024S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71256SA15YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	15 ns
IDT71256SA20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	20 ns
IDT71256SA25YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
IDT71342LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3			YES		19.1262 mm	20 ns
IDT71342LA20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK, LOW PROFILE				.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3			YES		14 mm	20 ns
IDT71V35761S200PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel		128KX36	128K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.1 ns
IDT71V424S12PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
IS61C25616AL-10KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE				1.27 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J44		5.5 V	3.75 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	10	260			28.575 mm	10 ns
IS61C25616AL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	10	260			18.415 mm	10 ns
IS61C6416AL-12TI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0001 Amp	18.415 mm	12 ns
IS61WV10248BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3	2.5/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.75 mm	85 Cel	3-STATE	1MX8	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	9 mm	Not Qualified	8388608 bit	2.4 V		e1	10	260		.025 Amp	11 mm	10 ns
IS62WV10248DBLL-55TLI	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	22 mA	1048576 words	COMMON	1.8	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX8	1M	1.4 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	2.2 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	1.65 V		e3				.00004 Amp	18.415 mm	55 ns
IS62WV25616BLL-55TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words				16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		4194304 bit	2.5 V		e3	30	260			18.41 mm	55 ns
IS62WV51216GBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS64WV204816BLL-12CTLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm		33554432 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	12 ns
IS66WV51216EBLL-70TLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	70 ns
K6X8016T3B-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1				Not Qualified	8388608 bit			e3		225		.000015 Amp		55 ns
M48Z02-150PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M5M51008DVP-70H#ST	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
R1LV1616HBG-4SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY					85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V			Not Qualified	16777216 bit	2.7 V								45 ns
R1RW0416DSB-2PR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm		4194304 bit	3 V							18.41 mm	12 ns
RMLV0408EGSB-4S2#AA1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3		8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46			1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel		DUAL	1	R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm		4194304 bit	2.7 V					YES	.0003 Amp	20.95 mm	45 ns
RMLV0808BGSB-4S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel		DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.41 mm	45 ns
RMWV6416AGBG-5S2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		3		16	GRID ARRAY		8			85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V				67108864 bit	2.7 V								55 ns
RMWV6416AGBG-5S2#KC0	Renesas Electronics	STANDARD SRAM		48		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	38 mA	4194304 words	COMMON	3		16						85 Cel		4MX16	4M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V				67108864 bit	2.7 V					YES	.003 Amp		55 ns
RMWV6416AGSD-5S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words				16	SMALL OUTLINE		8			85 Cel		4MX16	4M		-40 Cel		DUAL		R-PDSO-G52	3	3.6 V				67108864 bit	2.7 V								55 ns
X2212D/5	Xicor	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	1024 bit	4.5 V		e0			NO			300 ns
X2212DI	Xicor	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	85 Cel	3-STATE	256X4	256		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	1024 bit	4.5 V		e0			NO			300 ns
X2212DMB	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
X2212DMB/10	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
X2212DMB/5	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
5962-8685906XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER				1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Qualified	65536 bit	4.5 V		e0					11.4554 mm	55 ns
7007L15JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.005 Amp	24.2062 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.