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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1019CV33-10ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260		.005 Amp	20.95 mm	10 ns
CY7C1019CV33-12ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260		.005 Amp	20.95 mm	12 ns
CY7C1019CV33-12ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			128KX8	128K		0 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260			20.95 mm	12 ns
CY7C1019DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.6 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1021BN-15ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1021BN-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1021D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	28.575 mm	10 ns
CY7C1041BV33-15ZI	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0					18.41 mm	15 ns
CY7C1041BV33-15ZIT	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	15 ns
CY7C1041BV33-20ZIT	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	20 ns
CY7C1041DV33-10BVI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	8 mm	10 ns
CY7C1041DV33-10BVIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	8 mm	10 ns
CY7C1061AV33-10ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	3 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260		.05 Amp	22.415 mm	10 ns
CY7C1061AV33-10ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	2 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260		.05 Amp	22.415 mm	10 ns
CY7C1071DV33-12BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	2097152 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	2MX16	2M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C109D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1347G-133AXCT	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	4 ns
CY7C1380KV33-167AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87		.65 mm	85 Cel		3-STATE	512KX36	512K	3.135 V	-40 Cel	PURE TIN	QUAD	1	R-PQFP-G100	3	3.63 V	1.6 mm	167 MHz	14 mm		18874368 bit	3.135 V	PIPE LINED ARCHITECTURE			260	YES	.08 Amp	20 mm	3.4 ns
CY7C199D-10VXI	Infineon Technologies	STANDARD SRAM		28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5057 mm		262144 bit	4.5 V		e4	30	260	YES	.003 Amp	17.907 mm	10 ns
CY7C199D-10ZXI	Infineon Technologies	STANDARD SRAM		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm		262144 bit	4.5 V					YES	.003 Amp	11.8 mm	10 ns
DS1220AD-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	15 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V				Not Qualified	16384 bit	4.5 V		e0	40	260		.005 Amp		200 ns
DS1220AD-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0				.005 Amp		200 ns
DS1220AD-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260		.01 Amp		200 ns
DS1225AD-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDMA-P28		5.5 V	10.54 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225AD-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		200 ns
DS1250Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	512KX8	512K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDIP-T32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			YES	.005 Amp		70 ns
DS1250Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel			512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		70 ns
DS1250Y-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel			512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3				.0006 Amp		70 ns
GS74116AGP-8I	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
GS84018AGT-166	Gsi Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	PURE MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE			260		.02 Amp	20 mm	8.5 ns
GS84018CGB-150I	Gsi Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	85 Cel			256KX18	256K		-40 Cel		BOTTOM		R-PBGA-B119		2.7 V	1.99 mm		14 mm		4718592 bit	2.3 V	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED			22 mm
GS8642Z18B-250IV	Gsi Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	85 Cel			4MX18	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2 V	1.99 mm		14 mm	Not Qualified	75497472 bit	1.7 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	e0					22 mm	6.5 ns
HM62256BLSP-12	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V						.0001 Amp		120 ns
HM62256LP-8	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V							35.6 mm	85 ns
HM62256LP8	Advanced Electronic Packaging	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	35.6 mm	85 ns
HY62WT08081E-DG70C	Sk Hynix	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3		8	SMALL OUTLINE	SOP28,.47		1.27 mm	70 Cel	NO	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1, (NON-MUXED)	R-PDSO-G28		3.6 V	2.794 mm		8.69 mm	Not Qualified	262144 bit	2.7 V	IT ALSO OPERATES FROM 4.5 TO 5.5V				YES	.000005 Amp	18.39 mm	70 ns
IDT6116LA45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	45 ns
IDT7007L15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	PLASTIC/EPOXY	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	PERPENDICULAR	2	S-PPGA-P68	1					Not Qualified	262144 bit			e3	30	260		.005 Amp		15 ns
IDT7025S20PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel		3-STATE	8KX16	8K	4.5 V	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e0	20	240	YES	.015 Amp	14 mm	20 ns
IDT7025S25PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	265 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel		3-STATE	8KX16	8K	4.5 V	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e0	20	240	YES	.015 Amp	14 mm	25 ns
IDT70261L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel			16KX16	16K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V	SEMAPHORE	e3					14 mm	15 ns
IDT7027S25PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel		3-STATE	32KX16	32K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240	YES	.03 Amp	14 mm	25 ns
IDT70V09L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e3					14 mm	20 ns
IDT70V24L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel		3-STATE	4KX16	4K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260		.0025 Amp	14 mm	15 ns
IDT70V26L25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel		3-STATE	16KX16	16K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	3.6 V	4.572 mm		29.2862 mm	Not Qualified	262144 bit	3 V		e0	30	225		.003 Amp	29.2862 mm	25 ns
IDT70V28L20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.003 Amp	14 mm	20 ns
IDT70V28L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e0	20	240		.003 Amp	14 mm	20 ns
IDT70V3579S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel		3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e1	30	260			17 mm	5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.