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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7027L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	32768 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3	30	260		.01 Amp	14 mm	20 ns
IDT70V657S12DRI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	1179648 bit	3.15 V		e0				.015 Amp	28 mm	12 ns
IDT71124S12YGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71124S12YGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71V256SA15PZG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3			YES	.002 Amp	11.8 mm	15 ns
IDT71V416L12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IS61LPS25618A-200TQLI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100		3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	10	260		.000075 Amp	20 mm	3.1 ns
IS61LPS25618EC-200TQLI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e3	10	260		.085 Amp	20 mm	3.1 ns
IS61LPS25636A-200B3LI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		3.465 V	1.2 mm	200 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	10	260		.105 Amp	15 mm	3.1 ns
IS61LV25616AL-10BI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.015 Amp		10 ns
IS61LV25616AL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.015 Amp		10 ns
IS61LV25616AL-10TL-TR	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V		e3	40	260		.01 Amp	18.415 mm	10 ns
IS61VPS204836B-250B3LI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.2 mm	250 MHz	13 mm	Not Qualified	75497472 bit	2.375 V		e1	10	260			15 mm	2.6 ns
IS61VPS204836B-250B3LI-TR	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		2.625 V	1.2 mm		13 mm		75497472 bit	2.375 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15 mm	2.8 ns
IS62WV10248EBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX8	1M		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	45 ns
IS62WV12816BLL-55BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	2097152 bit	2.5 V		e1	10	260		.00001 Amp	8 mm	55 ns
IS62WV1288BLL-55TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3					18.4 mm	55 ns
IS62WV2568BLL-45HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.5 V						.00001 Amp	18.4 mm	45 ns
IS62WV2568EBLL-45HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE				85 Cel		256KX8	256K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.6 V					2097152 bit	2.2 V		e3	10	260				45 ns
IS64C1024AL-15KA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	20.95 mm	15 ns
IS64C1024AL-15KA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15KLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15KLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15TA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	18.4 mm	15 ns
IS64C1024AL-15TA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0005 Amp	18.4 mm	15 ns
IS66WV51216EBLL-55TLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	55 ns
TC551001BFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	70 ns
7024L55PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	240		.0015 Amp	14 mm	55 ns
70V08L15PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX8	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm		524288 bit	3 V		e3		260			14 mm	15 ns
DS1220Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		100 ns
DS1220Y-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-XDMA-P24		5.5 V	10.54 mm		17.97 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3					33.785 mm	100 ns
DS1220Y-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-XDMA-P24		5.5 V	10.54 mm		17.97 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3					33.785 mm	100 ns
DS1220Y-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0				.004 Amp		100 ns
DS1220Y-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		100 ns
GS74116AGP-8IT	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
IDT7024L55PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.0015 Amp	14 mm	55 ns
IDT71256SA20Y	Integrated Device Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.015 Amp	17.9324 mm	20 ns
IS61NLP102418B-200TQLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		18874368 bit	3.135 V			NOT SPECIFIED	NOT SPECIFIED			20 mm	3 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
CY62128ELL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY7C132-55PC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.334 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e0			YES	.015 Amp	61.976 mm	55 ns
CY7C1480V33-200AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3 ns
DS1225Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.398 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0					38.862 mm	200 ns
CY7C136E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3				.015 Amp	10 mm	25 ns
CY62148G-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm		4194304 bit	4.5 V				260			20.446 mm	45 ns
SN74LS219AN	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T16						Not Qualified
K6X4008C1F-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V						.000012 Amp	20.95 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.