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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
STK12C68-SF45ITR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5			1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm	8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	45 ns
TC551001APL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001APL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001BPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42 mm	70 ns
TC5588P-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	34.9 mm	20 ns
21L02HPC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE	5		1	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T16	2A	5.5 V			Not Qualified	1024 bit	4.5 V		e0						250 ns
5962-8866203MA	Defense Logistics Agency	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words		5		8	FLATPACK				1.27 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDFP-F28		5.5 V	2.921 mm	12.446 mm	Qualified	262144 bit	4.5 V		e0					18.288 mm	55 ns
6206-100/BXAJC	Motorola	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.84 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	37.145 mm	100 ns
93L412PC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	256X4	256		0 Cel	TIN LEAD	DUAL		R-PDIP-T22	2A				Not Qualified	1024 bit			e0						60 ns
93L422DMQB	National Semiconductor	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0						75 ns
AS7C4098-20TI	Alliance Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		240		.02 Amp	18.415 mm	20 ns
CY14B101KA-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	25 ns
CY14B104LA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	45 ns
CY14B104NA-BA20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	20 ns
CY14B104NA-BA45XE	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	125 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm		4194304 bit	3 V		e1	20	260			10 mm	45 ns
CY14B104NA-ZS25XE	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm		4194304 bit	3 V				260			18.415 mm	25 ns
CY14B104NA-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260		.005 Amp	22.415 mm	25 ns
CY14B108K-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	45 ns
CY14B108L-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		1MX8	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	8388608 bit	2.7 V		e1	20	260		.01 Amp	10 mm	25 ns
CY14B108L-ZS20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e4	20	260		.01 Amp	18.415 mm	20 ns
CY14B108M-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.01 Amp	22.415 mm	25 ns
CY14B108N-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	75 mA	524288 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		512KX16	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	8388608 bit	2.7 V		e1	20	260		.01 Amp	10 mm	25 ns
CY14B116K-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	2097152 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V			30	260		.00075 Amp	18.415 mm	25 ns
CY14B116M-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V			30	260		.00075 Amp	22.415 mm	25 ns
CY14B116N-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.7 V				260			22.415 mm	25 ns
CY14B116N-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.7 V				260			22.415 mm	45 ns
CY14B256LA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	30	260		.005 Amp	15.875 mm	25 ns
CY14B256LA-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	25 ns
CY14E116L-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm	10.16 mm		16777216 bit	4.5 V							18.415 mm	25 ns
CY14MB064J1-SXI	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		3	3	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	Not Qualified	65536 bit	2.7 V		e4				.00015 Amp	4.889 mm
CY14V101NA-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	65536 words		3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	25 ns
CY14V101NA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	65536 words		3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	25 ns
CY14V104LA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	524288 words	COMMON	3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
CY14V116G7-BZ30XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	15 mm		16777216 bit	2.7 V		e1		260			17 mm	30 ns
CY22E016L-SZ45XC	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		2KX8	2K		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	7.505 mm	Not Qualified	16384 bit	4.5 V		e4		260			17.905 mm	45 ns
CY62126EV30LL-55BVXE	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		1048576 bit	2.2 V		e1	20	260	YES	.00003 Amp	8 mm	55 ns
CY62128BLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
CY62136VLL-70BAI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm	7 mm	Not Qualified	2097152 bit	2.7 V		e0				.0000075 Amp	7 mm	70 ns
CY62137FV30LL-55ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000012 Amp	18.415 mm	55 ns
CY62146DV30LL-70ZSXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	TIN	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10.16 mm	Not Qualified	4194304 bit	2.2 V		e3					18.415 mm	70 ns
CY62146G30-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		4194304 bit	2.2 V		e1		260			8 mm	45 ns
CY62147EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V		e1	20	260		.000005 Amp	8 mm	55 ns
CY62148DV30LL-70SXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4					20.4465 mm	70 ns
CY62148EV30LL-55SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4	20	260	YES	.000007 Amp	20.4465 mm	55 ns
CY62148VLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS, LOW STANDBY POWER	e0				.0000055 Amp	20.95 mm	70 ns
CY62157DV30LL-55BVXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	55 ns
CY62157ELL-55BVXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSOP44,.46,32		SRAMs	.75 mm	125 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm	6 mm	Not Qualified	8388608 bit	4.5 V		e1	20	260		.00003 Amp	8 mm	55 ns
CY62167DV30LL-45ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	37 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.2 V		e0				.00001 Amp	18.4 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.