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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C128A-45PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	1	5.5 V	4.826 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	31.75 mm	45 ns
CY7C128A-55DMB	Cypress Semiconductor	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	31.877 mm	55 ns
CY7C131-45JI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	45 ns
CY7C131-55JCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQCC-J52	1	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0	30	225	YES	.015 Amp	19.1262 mm	55 ns
CY7C131-55JI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	55 ns
CY7C131-55JIT	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	1KX8	1K		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQCC-J52	1	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0	30	225	YES		19.1262 mm	55 ns
CY7C131-55JXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C131-55JXIT	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260	YES	.015 Amp	19.1262 mm	55 ns
CY7C1313KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.25 Amp	15 mm	.45 ns
CY7C1315KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		18874368 bit	1.7 V	BURST ARCHITECTURE	e1		260			15 mm
CY7C131E-15NXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	10 mm	15 ns
CY7C131E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	10 mm	25 ns
CY7C1345G-100AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	205 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.04 Amp	20 mm	8 ns
CY7C1350-100AC	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0				.03 Amp	20 mm	5 ns
CY7C1356C-166AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY7C1356C-166AXIT	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3			166 MHz		Not Qualified	9437184 bit			e4	40	260		.04 Amp		3.5 ns
CY7C136-55NC	Rochester Electronics	MULTI-PORT SRAM
CY7C136-55NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G52	3	5.5 V	2.45 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3	20	260		.015 Amp	10 mm	55 ns
CY7C136E-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp	19.1262 mm	25 ns
CY7C1370KV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX36	512K		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260			20 mm	3.4 ns
CY7C1370KV33-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260			20 mm	3 ns
CY7C1370KV33-200AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX36	512K		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260			20 mm	3 ns
CY7C1373D-100AXI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.07 Amp	20 mm	8.5 ns
CY7C1383C-100AC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.07 Amp	20 mm	8.5 ns
CY7C1383KV33-133AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	6.5 ns
CY7C1399B-15VXI	Cypress Semiconductor	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	3 V		e4	40	260		.00002 Amp	17.907 mm	15 ns
CY7C1413KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.26 Amp	15 mm	.45 ns
CY7C1414KV18-250BZI	Infineon Technologies	QDR SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	730 mA	1048576 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260	NO	.26 Amp	15 mm	.45 ns
CY7C1440AV33-167AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3.4 ns
CY7C1440AV33-167BZC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					17 mm	3.4 ns
CY7C144AV-25AXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	8192 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD	2	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e4	20	260		.00005 Amp	14 mm	25 ns
CY7C1470BV25-200BZI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e0					17 mm	3 ns
CY7C1470BV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3.4 ns
CY7C1472V25-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	1.8/2.5,2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	4MX18	4M	2.38 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3 ns
CY7C1480BV25-200BZC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	2.375 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V		e0		220	YES	.12 Amp	17 mm	3 ns
CY7C1480BV33-200AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3 ns
CY7C1481BV33-133AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	133 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE			260			20 mm	6.5 ns
CY7C150-10SCR	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1024 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	4096 bit	4.5 V					YES		15.4 mm	10 ns
CY7C1514KV18-300BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY7C1518KV18-250BZXC	Cypress Semiconductor	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1518KV18-250BZXI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1525KV18-250BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	640 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY7C15632KV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1570KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	970 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.38 Amp	15 mm	.45 ns
CY7C1614KV18-250BZI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260	NO	.37 Amp	17 mm	.45 ns
CY7C1618KV18-333BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	650 mA	8388608 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.41 Amp	17 mm	.45 ns
CY7C1620KV18-250BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	660 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.37 Amp	17 mm	.45 ns
CY7C1625KV18-250BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	16777216 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	16MX9	16M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260	NO	.37 Amp	17 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.