SRAM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TMS40L47-30JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-XDIP-T20				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS2147-9NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				90 ns
SNC54LS213J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				12	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X12	16		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
8002501FA	Texas Instruments	STANDARD SRAM	MILITARY	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	TTL	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	FLATPACK	FL16,.3	Other Memory ICs	1.27 mm	125 Cel		4X4	4		-55 Cel		DUAL		R-GDFP-F16	5.5 V	2.03 mm	6.73 mm	Qualified	16 bit	4.5 V							10.16 mm	45 ns
SNC54S207J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256		-55 Cel		DUAL		R-XDIP-T16				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED
SMJ5517-20FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel		QUAD		R-XQCC-N32				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		.0001 Amp		200 ns
SMJ69CE256-45FGM	Texas Instruments
SNC54LS318W	Texas Instruments	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC	YES		TTL	MIL-STD-883 Class B (Modified)	FLAT	PARALLEL	ASYNCHRONOUS		32 words				8	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel	OPEN-COLLECTOR	32X8	32		-55 Cel		DUAL		R-XDFP-F20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SNJ5484AW-10	Texas Instruments	STANDARD SRAM	MILITARY	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	TTL		FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		1	FLATPACK			1.27 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel		DUAL	1	R-GDFP-F16	5.5 V	2.03 mm	6.73 mm	Not Qualified	16 bit	4.5 V					NO		10.2 mm	40 ns
SN54HCT219J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED				27 ns
TMS40L46-45NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-PDIP-T20				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
SM64C64-30FG	Texas Instruments	STANDARD SRAM	MILITARY		QCCN		CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC(UNSPEC)	SRAMs		125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		QUAD						Not Qualified	65536 bit							.00001 Amp		30 ns
SNC54ALS317FH	Texas Instruments	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC	YES		TTL	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS		64 words				4	CHIP CARRIER	LCC20,.35SQ	SRAMs	1.27 mm	125 Cel	OPEN-COLLECTOR	64X4	64		-55 Cel		QUAD		S-XQCC-N20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
5962-8670503RA	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE				125 Cel		4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V		e0						35 ns
5962-00-626-1926	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
7704201EX	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel		DUAL		R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Qualified	16 bit	4.5 V			NOT APPLICABLE	NOT APPLICABLE			19.56 mm	45 ns
SN5484AJ-00	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		1	IN-LINE			2.54 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V					NO		19.56 mm	40 ns
BQ4015YMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	90 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDMA-P32	5.5 V			Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp		70 ns
SN54LS219W	Texas Instruments	STANDARD SRAM	MILITARY	16	DFP	RECTANGULAR	CERAMIC	YES		TTL		FLAT	PARALLEL	ASYNCHRONOUS		16 words				4	FLATPACK	FL16,.3	SRAMs	1.27 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDFP-F16				Not Qualified
BQ4011YMA-200N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			75 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDIP-T28				Not Qualified	262144 bit							.004 Amp		200 ns
SM61CD16-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
SM64C256-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			35 ns
5962-9560004M8X	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-55 Cel	TIN LEAD	DUAL		R-XDSO-J36	5.5 V	2.79 mm	10.795 mm	Not Qualified	4194304 bit	4.5 V		e0					23.37 mm	20 ns
TMS2114-45NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
SNJ5484AJ-00	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		1	IN-LINE			2.54 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V					NO		19.56 mm	40 ns
BQ4015YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDMA-P32	5.5 V			Not Qualified	4194304 bit	4.5 V						.001 Amp		70 ns
TMS40L45-45NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
BQ4015YMB-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDIP-T32				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
MM2114N-2	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				70 Cel		1KX4	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T18	5.25 V				4096 bit	4.75 V		e0						200 ns
SN54S301J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	256 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	256X1	256		-55 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED				85 ns
5962-8601508ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	125 Cel		64KX1	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0					13.446 mm	70 ns
SM69CE288-55FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		9	CHIP CARRIER				125 Cel	3-STATE	32KX9	32K		-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	294912 bit	4.5 V	AUTOMATIC POWER-DOWN				YES			55 ns
BQ4010YMA-85N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	85 ns
SN54LS211W	Texas Instruments	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC	YES		TTL		FLAT	PARALLEL	ASYNCHRONOUS		16 words				9	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel	3-STATE	16X9	16		-55 Cel		DUAL		R-XDFP-F20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4039-1NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-PDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				650 ns
SN54LS219J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified
CD74HCT670MTG4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4		-55 Cel		DUAL		R-PDSO-G16	5.5 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
TMS6789-15DJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL		R-PDSO-J24				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.01 Amp		15 ns
5962-8685919ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N22	5.5 V	1.905 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0					12.446 mm	55 ns
5962-8874001LA	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0						35 ns
TMS4042-1JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	COMMON			4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T18				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				650 ns
8413205RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE				125 Cel		16KX1	16K		-55 Cel		DUAL		R-XDIP-T20	5.5 V				16384 bit	4.5 V								35 ns
SMJ61CD64-25FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
SM64C256-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
SM64C16-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
BQ4013MA-85N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			105 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit							.004 Amp		85 ns
SM61CD16-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			35 ns
SMJ61CD64-55JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.