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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6X8016T3B-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44						Not Qualified	8388608 bit			e0				.000015 Amp		70 ns
K7D803671B-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	670 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0				.15 Amp	22 mm	.2 ns
KM6161000BLTI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00002 Amp	18.41 mm	70 ns
KM62256BLG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	18.29 mm	100 ns
KM62256DLG-5L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000003 Amp	18.29 mm	55 ns
KM64258BJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp	18.42 mm	15 ns
KM64258CJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O	e0			YES	.002 Amp	18.42 mm	15 ns
KM681000BLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	20.47 mm	70 ns
KM681000BLGI-7	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.47 mm	70 ns
KM681000CLP-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	41.91 mm	70 ns
KM681000LP-8	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	42.035 mm	85 ns
KM68257CJ-15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp	18.42 mm	15 ns
LH5116-10F	Sharp Corporation	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.3 mm		15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			31 mm	100 ns
LH5116H-10	Sharp Corporation	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel		DUAL	1	R-PDIP-T24		5.5 V	5.3 mm		15.24 mm	Not Qualified	16384 bit	4.5 V					YES		31 mm	100 ns
LH5164A-10L	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	-10 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.2 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES		36 mm	100 ns
LH52256CVN	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	2.6 mm		8.6 mm	Not Qualified	262144 bit	2.7 V		e0					18 mm	200 ns
MB84256C-70LL	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.8 mm		8.6 mm	Not Qualified	262144 bit	4.5 V		e0					17.75 mm	70 ns
MCM2018AN35	Motorola	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.44 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES		31.69 mm	35 ns
MCM2114P20	Motorola	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						200 ns
MCM2114P45	Motorola	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						450 ns
MCM2128P15	Motorola	STANDARD SRAM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm		3-STATE	2KX8	2K			Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0						150 ns
MCM60256AP12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	36.83 mm	120 ns
MCM62940AFN14	Motorola	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	165 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	294912 bit	4.5 V	OUTPUT BUFFER SUPPLY VOLTAGE 5V +/- 10% OR 3.3V +/- 10%; SELF-TIMED WRITE; BURST COUNTER	e0			YES	.03 Amp	16.5862 mm	14 ns
MCM6341ZP10B	Motorola	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	70 Cel		128KX24	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	3145728 bit	3 V							22 mm	10 ns
MCM6810P	Motorola	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		128 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128X8	128		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.25 V	5.08 mm		15.24 mm	Not Qualified	1024 bit	4.75 V		e0			NO		31.75 mm	450 ns
MT3LST6464PG-66	Micron Technology	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	585 mA	65536 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160		3.6 V		66 MHz		Not Qualified	4194304 bit	3.135 V	32K X 8 TAG				YES	.013 Amp		7 ns
MT45W4MW16BCGB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1				.00012 Amp	8 mm	70 ns
MT45W8MW16BGX-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260		.0002 Amp	10 mm	85 ns
MT58L256L36PF-7.5IT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX36	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e0					15 mm	4 ns
MT5C2561-20	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	262144 bit			e0				.005 Amp		20 ns
MT5C6408DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0			YES	.0003 Amp	18.44 mm	20 ns
NMC2116N20L	National Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0						200 ns
P5164SL-10	Intel	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V	4.44 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	LG-MAX, SEATED HT-CALCULATED	e0				.00005 Amp	37.2 mm	100 ns
STK11C68-C35I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	4.11 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	STORE/RECAL TO EEPROM SOFTWARE	e0				.00075 Amp	35.56 mm	35 ns
STK11C68-SF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		8.6865 mm	Not Qualified	65536 bit	4.5 V		e3		260		.00075 Amp	18.3895 mm	45 ns
STK12C68-5C45M	Simtek	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	4.14 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES	e0		240	YES	.004 Amp	35.56 mm	45 ns
STK12C68-5L55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	CHIP CARRIER	LCC28(UNSPEC)	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm		8.89 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	13.97 mm	35 ns
STK12C68-L45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm		8.89 mm	Not Qualified	65536 bit	4.5 V						.02 Amp	13.97 mm	45 ns
STK12C68-PF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	4.82 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0015 Amp	34.67 mm	25 ns
STK12C68-SF25	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	25 ns
STK12C68-SF25ITR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	25 ns
STK12C68-WF25I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0025 Amp	36.322 mm	25 ns
STK14C88-5C45M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	1	5.5 V	4.11 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000	e0				.003 Amp	40.64 mm	45 ns
STK15C88-NF25ITR	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	25 ns
STK20C04-WF25I	Simtek	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	512 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		512X8	512		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.57 mm		15.24 mm	Not Qualified	4096 bit	4.5 V		e3		260		.00075 Amp	36.83 mm	25 ns
TC551001BFL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V							20.6 mm	85 ns
TC551001CFI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	70 ns
TC551001CP-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V					YES	.00001 Amp	42 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.