Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
CHIP CARRIER |
1.27 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N22 |
5.5 V |
1.905 mm |
7.366 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
12.446 mm |
45 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
25 ns |
||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
75 mA |
32768 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDMA-P28 |
5.5 V |
9.53 mm |
18.415 mm |
Not Qualified |
262144 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
37.72 mm |
150 ns |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
90 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0001 Amp |
25 ns |
||||||||||||||||
Texas Instruments |
MULTI-PORT SRAM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
TTL |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
CHIP CARRIER |
LCC28,.45SQ |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
QUAD |
2 |
S-CQCC-N28 |
5.5 V |
2.03 mm |
11.43 mm |
Not Qualified |
64 bit |
4.5 V |
DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
11.43 mm |
20 ns |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-XDMA-G28 |
3.6 V |
Not Qualified |
262144 bit |
3 V |
100 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL100K |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
SEPARATE |
-4.5 |
1 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
256KX1 |
256K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
262144 bit |
10 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
150 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
MIL-STD-883 Class B (Modified) |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
12 |
FLATPACK |
FL20,.3 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16X12 |
16 |
-55 Cel |
DUAL |
R-XDFP-F20 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC20,.3X.43 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX4 |
4K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N20 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
45 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
-55 Cel |
DUAL |
1 |
R-CDIP-T24 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
35 ns |
|||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
115 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T32 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
120 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16 words |
5 |
5 |
4 |
CHIP CARRIER |
LCC20,.35SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
QUAD |
S-XQCC-N20 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
34 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
S BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-XDMA-S34 |
5.5 V |
Not Qualified |
1048576 bit |
4.75 V |
120 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
QCCN |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LCC(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
QUAD |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00001 Amp |
40 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
1000 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
OTHER |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL |
-5.2 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
-5.2 |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
85 Cel |
256X1 |
256 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
35 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
0 Cel |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N32 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0002 Amp |
55 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
36 |
DFP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
FLATPACK |
125 Cel |
3-STATE |
512KX8 |
512K |
-55 Cel |
DUAL |
1 |
R-CDFP-F36 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
YES |
25 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-XDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
120 ns |
||||||||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
75 mA |
32768 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDMA-P28 |
5.5 V |
9.53 mm |
18.415 mm |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
37.72 mm |
70 ns |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
36 |
SOJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
125 Cel |
3-STATE |
512KX8 |
512K |
-55 Cel |
DUAL |
1 |
R-CDSO-J36 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
YES |
20 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
MIL-STD-883 Class B (Modified) |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
5 |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
50 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
0 Cel |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
20 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
36 |
DFP |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
225 mA |
524288 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL36,.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F36 |
5.5 V |
3.18 mm |
12.954 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
23.365 mm |
35 ns |
|||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
110 mA |
262144 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-XDMA-T32 |
5.5 V |
Not Qualified |
2097152 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
4 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64X4 |
64 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
OTHER |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
103 mA |
64 words |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
85 Cel |
64X1 |
64 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
15 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
64 words |
4 |
FLATPACK |
FL20,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
64X4 |
64 |
-55 Cel |
DUAL |
R-XDFP-F20 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
50 ns |
||||||||||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
76 |
GQFF |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-PRF-38535 Class V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
635 mA |
524288 words |
COMMON |
1.8 |
1.8 |
32 |
FLATPACK, GUARD RING |
TPAK76,2SQ,25 |
SRAMs |
.635 mm |
125 Cel |
3-STATE |
512KX32 |
512K |
1.7 V |
-55 Cel |
GOLD |
QUAD |
1 |
R-CQFP-F76 |
3.6 V |
2.67 mm |
22 MHz |
20.462 mm |
Qualified |
16777216 bit |
3 V |
e4 |
YES |
.00033 Amp |
25.312 mm |
20 ns |
|||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
81 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N32 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0001 Amp |
45 ns |
||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
IN-LINE |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-CDIP-T24 |
5.5 V |
Not Qualified |
4096 bit |
4.5 V |
NO |
35 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
20 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC20,.3X.43 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX4 |
4K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N20 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
25 ns |
||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
28 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B (Modified) |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX4 |
64K |
-55 Cel |
QUAD |
1 |
R-CQCC-N28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
45 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0001 Amp |
25 ns |
|||||||||||||||
Texas Instruments |
CONTENT ADDRESSABLE SRAM |
OTHER |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
16 words |
8 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
85 Cel |
16X8 |
16 |
-25 Cel |
DUAL |
R-PDIP-T40 |
Not Qualified |
|||||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N32 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0002 Amp |
45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.