NXP Semiconductors Laser Diodes 37

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Maximum Forward Current	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Semiconductor Material	Maximum Operating Temperature	Minimum Operating Temperature	Spectral Bandwidth	Maximum Forward Voltage
CQF25C/D12	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D24	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D24	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D43	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D13	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25A/D14	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D11	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25A/D52	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D41	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF23/D13	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF23/D44	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF23/D12	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25A/D12	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D41	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D43	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25A/D41	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D41	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D44	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D11	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D44	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D52	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D14	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25A/D13	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D22	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D14	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25B/D43	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25B/D12	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D42	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D52	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25A/D11	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	820	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D14	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D21	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D23	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF23/D24	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.07 A	790	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	2 m	2.5 V
CQF25B/D11	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	850	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D13	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V
CQF25C/D52	NXP Semiconductors	LASER DIODE	THROUGH HOLE MOUNT	.15 A	875	.0000000005 s	Laser Diodes	AlGaAs	60 Cel	-10 Cel	4.5 m	2.5 V

Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.