Toshiba Laser Diodes 228

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Manufacturers (1)
    • Toshiba
    • Broadcom
    • Honeywell Sensing And Control
    • Infineon Technologies
    • NXP Semiconductors
    • Onsemi
    • Osi Laser Diode
    • Osram Opto Semiconductors
    • Panasonic
    • ROHM
    • Renesas Electronics
    • Sharp Corporation
    • Tt Electronics Plc
    • Viavi Solutions
Optoelectronic Type
    • LASER DIODE
Mounting Feature
    • RADIAL MOUNT
    • SURFACE MOUNT
    • THROUGH HOLE MOUNT
Terminal Finish
    • GOLD
    • GOLD NICKEL
    • MATTE TIN OVER NICKEL
    • TIN
    • TIN OVER NICKEL
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
Configuration
    • COMMON CATHODE 2 ELEMENTS
    • COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN EA MODULATOR
    • SINGLE WITH BUILT-IN PHOTO DIODE
    • SINGLE WITH BUILT-IN PHOTO DIODE AND PELTIER-COOLER
Size
    • .1 mm
    • 1 mm
    • 1.2 mm
    • 1.27 mm
    • 1.5 mm
    • 1.52 mm
    • 1.6 mm
    • 1.8 mm
    • 10 mm
    • 2 mm
    • 2.1 mm
    • 2.2 mm
    • 2.3 mm
    • 2.4 mm
    • 2.54 mm
    • 2.7 mm
    • 3 mm
    • 3.175 mm
    • 3.55 mm
    • 4.32 mm
    • 4.5 mm
    • 4.9 mm
    • 4.95 mm
    • 5 mm
No. of Functions
    • 1
Maximum Forward Current
    • .01 A
    • .012 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .058 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .085 A
    • .09 A
    • .095 A
    • .1 A
    • .105 A
    • .11 A
    • .115 A
    • .12 A
    • .125 A
    • .13 A
    • .135 A
    • .14 A
    • .15 A
    • .155 A
    • .18 A
    • .2 A
    • .215 A
    • .225 A
    • .28 A
    • .3 A
    • .33 A
    • .4 A
    • .49 A
    • .6 A
    • .7 A
    • .72 A
    • .94 A
    • .95 A
    • 1 A
    • 1.2 A
    • 1.6 A
    • 1.8 A
    • 11 A
    • 2.6 A
    • 2.9 A
    • 22 A
    • 40 A
    • 5 A
    • 9 A
Peak Wavelength (nm)
    • 1.31
    • 1200
    • 1270
    • 1280
    • 1290
    • 1300
    • 1310
    • 1330
    • 1350
    • 1470
    • 1480
    • 1490
    • 1500
    • 1510
    • 1527
    • 1528
    • 1529
    • 1530
    • 1531
    • 1532
    • 1533
    • 1534
    • 1535
    • 1536
    • 1537
    • 1538
    • 1539
    • 1540
    • 1541
    • 1542
    • 1543
    • 1544
    • 1545
    • 1546
    • 1547
    • 1548
    • 1549
    • 1550
    • 1551
    • 1552
    • 1553
    • 1554
    • 1555
    • 1556
    • 1557
    • 1558
    • 1559
    • 1560
    • 1561
    • 1562
    • 1563
    • 1564
    • 1565
    • 1566
    • 1567
    • 1568
    • 1569
    • 1570
    • 1571
    • 1572
    • 1573
    • 1574
    • 1575
    • 1576
    • 1577
    • 1578
    • 1579
    • 1580
    • 1581
    • 1582
    • 1583
    • 1584
    • 1585
    • 1586
    • 1587
    • 1588
    • 1589
    • 1590
    • 1591
    • 1592
    • 1593
    • 1594
    • 1595
    • 1596
    • 1597
    • 1598
    • 1599
    • 1600
    • 1601
    • 1602
    • 1603
    • 1604
    • 1605
    • 1606
    • 1607
    • 1608
    • 1609
    • 1610
    • 1611
    • 1612
    • 1625
    • 1630
    • 1650
    • 405
    • 520
    • 633
    • 635
    • 638
    • 639
    • 640
    • 645
    • 650
    • 655
    • 656
    • 658
    • 660
    • 661
    • 665
    • 670
    • 675
    • 680
    • 685
    • 690
    • 695
    • 780
    • 783
    • 785
    • 790
    • 795
    • 800
    • 805
    • 806
    • 808
    • 809
    • 810
    • 815
    • 816
    • 820
    • 830
    • 845
    • 848
    • 850
    • 860
    • 870
    • 875
    • 889
    • 890
    • 905
    • 920
    • 940
    • 941
    • 975
Packing Method
    • SAMPLE
    • TR
    • TR, 7 INCH
    • TRAY
Maximum Response Time
    • .00000000004 s
    • .00000000005 s
    • .00000000008 s
    • .00000000009 s
    • .0000000001 s
    • .00000000012 s
    • .000000000125 s
    • .00000000015 s
    • .000000000175 s
    • .0000000002 s
    • .0000000003 s
    • .0000000004 s
    • .0000000005 s
    • .0000000007 s
    • .000000001 s
    • .0000000015 s
    • .000000002 s
    • .0000000035 s
    • .00000001 s
    • .000000013 s
    • .00000002 s
    • .0000005 s
    • .000001 s
Sub-Category
    • Laser Diodes
Semiconductor Material
    • AlGaAs
    • AlGaInAs
    • AlGaInP
    • GaAlAs
    • GaAlInP
    • GaAs
    • GaAsP
    • InAIGaAs/GaAs
    • InGaAlP
    • InGaAs
    • InGaAs/GaAs
    • InGaAsP
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 30 Cel
    • 35 Cel
    • 40 Cel
    • 45 Cel
    • 50 Cel
    • 55 Cel
    • 60 Cel
    • 65 Cel
    • 70 Cel
    • 75 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
    • 95 Cel
Shape
    • CYLINDRICAL
    • RECTANGULAR
    • ROUND
Maximum Threshold Current
    • 1000 mA
    • 15 mA
    • 20 mA
    • 200 mA
    • 230 mA
    • 2300 mA
    • 25 mA
    • 270 mA
    • 3 mA
    • 30 mA
    • 35 mA
    • 40 mA
    • 4000 mA
    • 45 mA
    • 450 mA
    • 50 mA
    • 55 mA
    • 550 mA
    • 60 mA
    • 600 mA
    • 65 mA
    • 70 mA
    • 700 mA
    • 75 mA
    • 80 mA
    • 800 mA
    • 85 mA
    • 850 mA
    • 880 mA
    • 90 mA
    • 900 mA
    • 95 mA
Minimum Operating Temperature
    • -10 Cel
    • -15 Cel
    • -20 Cel
    • -30 Cel
    • -40 Cel
    • -5 Cel
    • -50 Cel
    • 0 Cel
    • 10 Cel
    • 15 Cel
    • 5 Cel
Nominal Output Power
    • .3 W
    • 1 W
    • 1.1 W
    • 1.5 W
    • 1.6 W
    • 10 W
    • 1000 W
    • 110 W
    • 12 W
    • 15 W
    • 150 W
    • 1500 W
    • 175 W
    • 180 W
    • 20 W
    • 200 W
    • 2000 W
    • 240 W
    • 250 W
    • 3 W
    • 30 W
    • 3000 W
    • 320 W
    • 35 W
    • 4.5 W
    • 40 W
    • 5 W
    • 50 W
    • 500 W
    • 5000 W
    • 6 W
    • 60 W
    • 6500 W
    • 7 W
    • 750 W
    • 75000 W
Additional Features
    • AEC-Q101
    • AEC-Q102
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • WITH CONNECTOR
Spectral Bandwidth
    • .1 m
    • .5 m
    • .85 m
    • 1 m
    • 1.3 m
    • 1.5 m
    • 10 m
    • 15 m
    • 2 m
    • 2.5 m
    • 2.8 m
    • 20 m
    • 200000 m
    • 3 m
    • 3.5 m
    • 30 m
    • 4 m
    • 4.5 m
    • 5 m
    • 50 m
    • 6 m
    • 60 m
    • 7 m
    • 7.5 m
    • 8 m
    • 850000 m
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Forward Voltage
    • .0015 V
    • 1.3 V
    • 1.4 V
    • 1.5 V
    • 1.6 V
    • 1.8 V
    • 10 V
    • 11 V
    • 15 V
    • 16 V
    • 2 V
    • 2.1 V
    • 2.2 V
    • 2.3 V
    • 2.4 V
    • 2.45 V
    • 2.5 V
    • 2.55 V
    • 2.6 V
    • 2.7 V
    • 2.8 V
    • 24 V
    • 3 V
    • 3.4 V
    • 3.5 V
    • 4 V
    • 4.5 V
    • 4.6 V
    • 5 V
    • 6.5 V
    • 6.7 V
    • 7.3 V
    • 8 V
Reset All
Part RoHS Manufacturer Optoelectronic Type Mounting Feature Terminal Finish Configuration Size No. of Functions Maximum Forward Current Peak Wavelength (nm) Packing Method Maximum Response Time Sub-Category Semiconductor Material Maximum Operating Temperature Shape Maximum Threshold Current Minimum Operating Temperature Nominal Output Power Additional Features Spectral Bandwidth JESD-609 Code Maximum Forward Voltage

TOLD9221M

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

.065 A

670

Laser Diodes

GaAlInP

60 Cel

-10 Cel

e0

TOLD133

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOED110

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

1310

Laser Diodes

70 Cel

-40 Cel

TOLD121R

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.085 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD321CBB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD323BCC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

2 V

TOLD9410(S)

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

650

Laser Diodes

40 Cel

-10 Cel

TOLD171

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.095 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD123

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.08 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD9211(F)

Toshiba

LASER DIODE

1

670

5 W

TOLD131

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.105 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD323CBB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD320AAA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD321CAB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD322CBC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD136A

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD322ACC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD129

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.08 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD323BAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD9441MC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.08 A

650

Laser Diodes

70 Cel

-10 Cel

3 V

TOED313

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.2 A

1310

.0000000035 s

Laser Diodes

60 Cel

-20 Cel

1.5 V

TOLD320ABA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD321BBB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD350S

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1550

.0000000003 s

Laser Diodes

60 Cel

15 Cel

1.5 V

TOLD321ACB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

2 V

TOLD9231(F)

Toshiba

LASER DIODE

TOLD323ABC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD320ABC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD323AAA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD321ABB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD9463MD

Toshiba

LASER DIODE

SINGLE WITH BUILT-IN PHOTO DIODE

1.8 mm

1

650

ROUND

45 mA

10 W

TOLD322BBA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD9412(S)

Toshiba

LASER DIODE

1

650

3 W

TOLD322BBC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD322CAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD321BAB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD320B

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1300

.0000000005 s

Laser Diodes

InGaAs

65 Cel

-10 Cel

3 m

1.5 V

TOLD158

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.095 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD135

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD9215(S)

Toshiba

LASER DIODE

1

670

10 W

TOLD159

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD320CCB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD322CCC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD173

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD128

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.085 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD9201(S)

Toshiba

LASER DIODE

1

670

5 W

TOLD320AAB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD321BAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V
Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.