Toshiba Laser Diodes 228

Reset All

Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	No. of Functions	Maximum Forward Current	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Semiconductor Material	Maximum Operating Temperature	Shape	Maximum Threshold Current	Minimum Operating Temperature	Nominal Output Power	Spectral Bandwidth	JESD-609 Code	Maximum Forward Voltage
TOLD320CCA	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				1.5 V
TOLD110	Toshiba	LASER DIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)					780		Laser Diodes	GaAlAs	60 Cel			-10 Cel			e0
TOLD123R	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.08 A	780		Laser Diodes		50 Cel			-10 Cel
TOLD321BBC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	70 Cel			-10 Cel				2 V
TOLD151R	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.095 A	810		Laser Diodes		50 Cel			-10 Cel
TOLD323BBB	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	70 Cel			-10 Cel				2 V
TOLD310	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.0000000003 s	Laser Diodes		65 Cel			-10 Cel				1.5 V
TOLD350B	Toshiba	LASER DIODE	SURFACE MOUNT					.15 A	1550	.0000000005 s	Laser Diodes	InGaAs	70 Cel			-15 Cel		4 m		1.5 V
TOLD9211M	Toshiba	LASER DIODE	THROUGH HOLE MOUNT				1		670		Laser Diodes		50 Cel			-10 Cel	5 W
TOLD322CCB	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				1.5 V
TOLD323BBA	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	70 Cel			-10 Cel				2 V
TOLD322BCC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				1.5 V
TOLD70	Toshiba	LASER DIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)				.15 A	1200	.0000000005 s	Laser Diodes	InGaAs	50 Cel			0 Cel		2 m	e0
TOLD124	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.08 A	780		Laser Diodes		50 Cel			-10 Cel
TOLD9443SD	Toshiba	LASER DIODE			SINGLE WITH BUILT-IN PHOTO DIODE	1.6 mm	1		650					ROUND	65 mA		10 W
TOLD9200(F)	Toshiba	LASER DIODE					1		670								3 W
TOLD9231MTR	Toshiba	LASER DIODE			SINGLE WITH BUILT-IN PHOTO DIODE	1.8 mm	1		670				60 Cel	ROUND	75 mA	-10 Cel	5 W
TOLD322AAA	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				1.5 V
TOLD322BCB	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				1.5 V
TOLD320CBB	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	70 Cel			-10 Cel				1.5 V
TOLD322BAC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				1.5 V
TOLD321AAA	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				2 V
TOLD323ACC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				2 V
TOLD9111(S)	Toshiba	LASER DIODE	THROUGH HOLE MOUNT				1		680		Laser Diodes		60 Cel			-10 Cel	5 W
TOLD350	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1550	.0000000003 s	Laser Diodes	InGaAs	70 Cel			-15 Cel				15 V
TOLD134R	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.115 A	830		Laser Diodes		50 Cel			-10 Cel
TOLD122	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.085 A	780		Laser Diodes		50 Cel			-10 Cel
TOLD9321(F)	Toshiba	LASER DIODE	THROUGH HOLE MOUNT						660		Laser Diodes	GaAlInP	50 Cel			-10 Cel
TOLD9462MD	Toshiba	LASER DIODE	THROUGH HOLE MOUNT		SINGLE WITH BUILT-IN PHOTO DIODE	1.8 mm	1		650		Laser Diodes	InGaAlP	70 Cel	ROUND	40 mA	-10 Cel	7 W
TOLD9150(S)	Toshiba	LASER DIODE					1		690								30 W
TOLD9462MC(TR)	Toshiba
TOLD2001MDA	Toshiba	LASER DIODE			COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE	1.8 mm	1		790					ROUND	55 mA		10 W
TOLD157	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.095 A	810		Laser Diodes		50 Cel			-10 Cel
TOLD321CAC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				2 V
TOLD383S	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1550	.0000000003 s	Laser Diodes		60 Cel			10 Cel				.0015 V
TOLD139	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.115 A	830		Laser Diodes		50 Cel			-10 Cel
TOLD154R	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.115 A	810		Laser Diodes		50 Cel			-10 Cel
TOLD9450MC	Toshiba	LASER DIODE			SINGLE WITH BUILT-IN PHOTO DIODE	1.8 mm	1		650					ROUND	95 mA		5 W
TOLD9521(S)	Toshiba	LASER DIODE	THROUGH HOLE MOUNT						635		Laser Diodes	GaAlInP	50 Cel			-10 Cel
TOLD80D	Toshiba	LASER DIODE	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)				.15 A	1300	.0000000005 s	Laser Diodes	InGaAs	60 Cel			0 Cel		3 m	e0
TOLD320ACA	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	80 Cel			-30 Cel				1.5 V
TOLD163	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.08 A	780		Laser Diodes		50 Cel			-10 Cel
TOLD320BAC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				1.5 V
TOLD9140(S)	Toshiba	LASER DIODE					1		685								20 W
TOLD321AAC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				2 V
TOLD362S	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1550	.0000000005 s	Laser Diodes		65 Cel			-20 Cel				.0015 V
TOLD323CAC	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1310	.000000001 s	Laser Diodes	InGaAs	65 Cel			0 Cel				2 V
TOLD363S	Toshiba	LASER DIODE	THROUGH HOLE MOUNT					.15 A	1550	.0000000005 s	Laser Diodes		65 Cel			-20 Cel				.0015 V

Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.