SURFACE MOUNT Photodiodes 118

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Manufacturers
    • Broadcom
    • Centronic
    • Diodes Incorporated
    • Everlight Electronics
    • First Sensor Ag
    • Hamamatsu Photonics Kk
    • Honeywell Sensing And Control
    • Infineon Technologies
    • Kodenshi Auk
    • Laser Components
    • Luna Innovations
    • Marktech Optoelectronics
    • Motorola
    • Onsemi
    • Osram Opto Semiconductors
    • ROHM
    • Renesas Electronics
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Udt Sensors
    • United Detector Technology
    • Vishay Intertechnology
Optoelectronic Type
    • AVALANCHE PHOTODIODE
    • PIN PHOTODIODE
    • PN PHOTODIODE
    • SINGLE COLOR LED
Mounting Feature (1)
    • SURFACE MOUNT
    • PANEL MOUNT
    • RADIAL MOUNT
    • THROUGH HOLE MOUNT
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - with Nickel (Ni) barrier
    • Silver (Ag)
    • TIN
    • TIN LEAD
    • TIN OVER NICKEL
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Configuration
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMMON CATHODE, 64 ELEMENTS
    • COMMON CATHODE, 8 ELEMENTS
    • COMPLEX
    • SEPARATE, 6 ELEMENTS
    • SINGLE
Size
    • .3 mm
    • .4 mm
    • .59 mm
    • .8 mm
    • 1 mm
    • 1.2 mm
    • 1.3 mm
    • 1.53 mm
    • 1.58 mm
    • 1.6 mm
    • 1.78 mm
    • 1.8 mm
    • 1.85 mm
    • 1.9 mm
    • 10 mm
    • 2 mm
    • 2.2 mm
    • 2.4 mm
    • 2.5 mm
    • 2.54 mm
    • 2.65 mm
    • 2.71 mm
    • 2.73 mm
    • 2.8 mm
    • 20 mm
    • 3 mm
    • 3.07 mm
    • 3.15 mm
    • 3.6 mm
    • 3.9 mm
    • 3.93 mm
    • 30 mm
    • 4 mm
    • 4.4 mm
    • 4.47 mm
    • 4.5 mm
    • 4.65 mm
    • 4.675 mm
    • 4.7 mm
    • 4.735 mm
    • 4.8 mm
    • 4.9 mm
    • 4.95 mm
    • 4.985 mm
    • 5 mm
    • 5.26 mm
    • 5.8 mm
    • 5.85 mm
    • 5.9 mm
    • 6 mm
    • 6.07 mm
    • 6.4 mm
    • 7.5 mm
    • 7.6 mm
    • 8.13 mm
    • 9.69 mm
Maximum Dark Current
    • .001 nA
    • .002 nA
    • .005 nA
    • .015 nA
    • .02 nA
    • .03 nA
    • .05 nA
    • .1 nA
    • .15 nA
    • .3 nA
    • .5 nA
    • 1 nA
    • 10 nA
    • 100 nA
    • 10000 nA
    • 12000 nA
    • 142 nA
    • 146 nA
    • 16 nA
    • 1700 nA
    • 1750 nA
    • 2 nA
    • 20 nA
    • 200 nA
    • 20000 nA
    • 25 nA
    • 3 nA
    • 30 nA
    • 300 nA
    • 3000 nA
    • 4 nA
    • 4000 nA
    • 443 nA
    • 49 nA
    • 5 nA
    • 50 nA
    • 500 nA
    • 5000 nA
    • 50000 nA
    • 6 nA
    • 60 nA
    • 7 nA
    • 720 nA
    • 81 nA
    • 914 nA
Maximum Supply Voltage
    • .8 V
No. of Functions
    • 1
    • 2
    • 4
    • 6
    • 8
Infrared (IR) Range
    • NO
    • YES
Peak Wavelength (nm)
    • 1000
    • 1250
    • 1550
    • 2300
    • 420
    • 540
    • 565
    • 580
    • 600
    • 620
    • 635
    • 760
    • 800
    • 820
    • 840
    • 850
    • 860
    • 870
    • 875
    • 880
    • 890
    • 900
    • 910
    • 920
    • 925
    • 930
    • 935
    • 940
    • 950
    • 960
    • 970
Packing Method
    • BULK
    • GEL PACK
    • TAPE
    • TR
    • TR, 13 INCH
    • TR, 7 INCH
Maximum Response Time
    • .00000000000025 s
    • .0000000000003 s
    • .0000000003 s
    • .0000000005 s
    • .0000000008 s
    • .000000001 s
    • .0000000015 s
    • .000000002 s
    • .0000000025 s
    • .000000003 s
    • .000000004 s
    • .000000005 s
    • .000000007 s
    • .000000009 s
    • .00000001 s
    • .000000014 s
    • .000000015 s
    • .00000002 s
    • .000000025 s
    • .00000003 s
    • .00000004 s
    • .000000045 s
    • .00000005 s
    • .0000000625 s
    • .00000007 s
    • .0000001 s
    • .00000012 s
    • .000000125 s
    • .00000035 s
    • .0000004 s
    • .0000005 s
    • .000001 s
    • .0000013 s
    • .0000015 s
    • .0000016 s
    • .0000018 s
    • .000002 s
    • .0000025 s
    • .000003 s
    • .0000035 s
    • .00025 s
Sub-Category
    • Optical Position Encoders
    • Photo Diodes
Maximum Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 120 V
    • 15 V
    • 16 V
    • 185 V
    • 20 V
    • 200 V
    • 25 V
    • 28 V
    • 30 V
    • 32 V
    • 35 V
    • 40 V
    • 45 V
    • 48 V
    • 50 V
    • 60 V
    • 7 V
    • 80 V
Semiconductor Material
    • GaAlAs
    • GaAs
    • GaAsP
    • GaInAs
    • Germanium
    • InGaAs
    • Silicon
Maximum Operating Temperature
    • 100 Cel
    • 110 Cel
    • 125 Cel
    • 150 Cel
    • 45 Cel
    • 50 Cel
    • 55 Cel
    • 60 Cel
    • 65 Cel
    • 70 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
Minimum Reverse Breakdown Voltage
    • 10 V
    • 100 V
    • 15 V
    • 16 V
    • 180 V
    • 20 V
    • 24.2 V
    • 24.25 V
    • 25 V
    • 28 V
    • 30 V
    • 32 V
    • 35 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
Minimum Operating Temperature
    • -10 Cel
    • -20 Cel
    • -25 Cel
    • -30 Cel
    • -40 Cel
    • -50 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
    • 5 Cel
Additional Features
    • AEC-Q101
    • AEC-Q101, HIGH SENSITIVITY
    • DAY LIGHT FILTER
    • DAY LIGHT FILTER, HIGH SENSITIVITY
    • DAY LIGHT FILTER, HIGH SENSITIVITY, SIDE VIEW
    • DAY LIGHT FILTER, SIDE VIEW, HIGH SENSITIVITY
    • DAYLIGHT FILTER
    • DAYLIGHT FILTER, HIGH RELIABILITY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, HIGH SENSITIVITY
    • HIGH RELIABILITY, HIGH SENSITIVITY, LOW NOISE
    • HIGH RELIABILITY, LOW NOISE
    • HIGH SENSITIVITY
    • LOW NOISE
    • RESPONDS FROM VISIBLE TO INFRARED RANGE
    • RESPONDS TO 600 TO 900 NANO METRE
    • SIDE VIEW
    • SIDE VIEW, RESPONDS FROM VISIBLE TO INFRARED RANGE
Nominal Light Current
    • .00009 mA
    • .000115 mA
    • .00042 mA
    • .00057 mA
    • .0009 mA
    • .001 mA
    • .0014 mA
    • .0015 mA
    • .0016 mA
    • .0017 mA
    • .00185 mA
    • .0021 mA
    • .0023 mA
    • .0024 mA
    • .003 mA
    • .0036 mA
    • .004 mA
    • .0043 mA
    • .005 mA
    • .0054 mA
    • .006 mA
    • .0063 mA
    • .0065 mA
    • .007 mA
    • .0074 mA
    • .0075 mA
    • .008 mA
    • .0085 mA
    • .009 mA
    • .01 mA
    • .0108 mA
    • .012 mA
    • .013 mA
    • .015 mA
    • .016 mA
    • .018 mA
    • .02 mA
    • .023 mA
    • .025 mA
    • .027 mA
    • .03 mA
    • .033 mA
    • .035 mA
    • .037 mA
    • .038 mA
    • .04 mA
    • .042 mA
    • .043 mA
    • .045 mA
    • .048 mA
    • .05 mA
    • .055 mA
    • .06 mA
    • .07 mA
    • .075 mA
    • .08 mA
    • .1 mA
    • .12 mA
    • .17 mA
    • .81 mA
JESD-609 Code
    • e0
    • e3
    • e4
Reset All
Part RoHS Manufacturer Optoelectronic Type Mounting Feature Terminal Finish Configuration Size Maximum Dark Current Maximum Supply Voltage No. of Functions Infrared (IR) Range Peak Wavelength (nm) Packing Method Maximum Response Time Sub-Category Maximum Reverse Voltage Semiconductor Material Maximum Operating Temperature Minimum Reverse Breakdown Voltage Shape Minimum Operating Temperature Additional Features Nominal Light Current JESD-609 Code

SFH2400

Infineon Technologies

SURFACE MOUNT

Tin/Lead (Sn/Pb)

1 nA

.000000005 s

Photo Diodes

50 V

Silicon

100 Cel

-55 Cel

e0

BPW34FS(E9087)

Infineon Technologies

PIN PHOTODIODE

SURFACE MOUNT

Tin/Lead (Sn/Pb)

30 nA

.00000002 s

Photo Diodes

32 V

Silicon

80 Cel

-40 Cel

e0

BPW33S

Infineon Technologies

SURFACE MOUNT

Tin/Lead (Sn/Pb)

.1 nA

.0000015 s

Photo Diodes

7 V

Silicon

80 Cel

-40 Cel

e0

BP104S

Infineon Technologies

PIN PHOTODIODE

SURFACE MOUNT

Tin/Lead (Sn/Pb)

30 nA

.00000002 s

Photo Diodes

20 V

Silicon

80 Cel

-40 Cel

e0

BP104BS

Infineon Technologies

PIN PHOTODIODE

SURFACE MOUNT

Tin/Lead (Sn/Pb)

SINGLE

5.85 mm

2 nA

1

YES

950

.0000004 s

Photo Diodes

20 V

Silicon

80 Cel

32 V

ROUND

-40 Cel

HIGH RELIABILITY, LOW NOISE

.025 mA

e0

SFH207A

Infineon Technologies

PIN PHOTODIODE

SURFACE MOUNT

SINGLE

9.69 mm

30 nA

1

YES

850

.00000003 s

Photo Diodes

15 V

Silicon

80 Cel

15 V

SQUARE

-40 Cel

HIGH RELIABILITY, LOW NOISE

.81 mA

OD-8453NA

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

Photo Diodes

20 V

InGaAs

85 Cel

-40 Cel

NDL5102C

Renesas Electronics

AVALANCHE PHOTODIODE

SURFACE MOUNT

200 nA

.0000000008 s

Photo Diodes

45 V

Germanium

60 Cel

-40 Cel

PH312

Renesas Electronics

SURFACE MOUNT

Tin/Lead (Sn/Pb)

4 nA

.000000001 s

Photo Diodes

80 Cel

-20 Cel

e0

NDL5405C

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

5 nA

.000000001 s

Photo Diodes

20 V

InGaAs

85 Cel

-40 Cel

PH314

Renesas Electronics

SURFACE MOUNT

Tin/Lead (Sn/Pb)

4 nA

.000000001 s

Photo Diodes

80 Cel

-20 Cel

e0

NDL5500C

Renesas Electronics

AVALANCHE PHOTODIODE

SURFACE MOUNT

100 nA

Photo Diodes

120 V

InGaAs

70 Cel

-40 Cel

OD8451

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

5 nA

Photo Diodes

20 V

InGaAs

85 Cel

-40 Cel

OD-8451N

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

5 nA

.000000001 s

Photo Diodes

InGaAs

85 Cel

-40 Cel

NDL5100C

Renesas Electronics

AVALANCHE PHOTODIODE

SURFACE MOUNT

500 nA

.0000000008 s

Photo Diodes

48 V

Germanium

60 Cel

-40 Cel

OD-8452NA

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

Photo Diodes

InGaAs

85 Cel

-40 Cel

PH311

Renesas Electronics

SURFACE MOUNT

Tin/Lead (Sn/Pb)

4 nA

Photo Diodes

80 Cel

-20 Cel

e0

PH503

Renesas Electronics

SURFACE MOUNT

Tin/Lead (Sn/Pb)

Photo Diodes

70 Cel

-10 Cel

e0

NDL5406C

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

7 nA

.000000004 s

Photo Diodes

20 V

InGaAs

85 Cel

-40 Cel

OD-8452NB

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

Photo Diodes

InGaAs

85 Cel

-40 Cel

OD-8453N

Renesas Electronics

PIN PHOTODIODE

SURFACE MOUNT

Photo Diodes

InGaAs

85 Cel

-40 Cel

HSDL-5400021

Broadcom

PIN PHOTODIODE

SURFACE MOUNT

Tin/Lead (Sn/Pb)

SINGLE

1.53 mm

5 nA

1

YES

875

Photo Diodes

40 V

85 Cel

40 V

ROUND

-40 Cel

.0016 mA

e0
Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.